FDP8443 N-Channel PowerTrench® MOSFET

August 2007

FDP8443 tm
®
N-Channel PowerTrench MOSFET
40V, 80A, 3.5mΩ
Features Applications
„ Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control

„ Typ Qg(10) = 142nC at VGS = 10V „ Powertrain Management

„ Low Miller Charge „ Solenoid and Motor Drivers

„ Low Qrr Body Diode „ Electronic Steering

„ UIS Capability (Single Pulse and Repetitive Pulse) „ Integrated Starter / Alternator

„ Qualified to AEC Q101 „ Distributed Power Architecture and VRMs

„ RoHS Compliant „ Primary Switch for 12V Systems

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP8443 Rev. A
 FDP8443 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
Drain Current Continuous (TC < 144oC, VGS = 10V) 80
ID Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) 20 A
Pulsed See Figure 4
EAS Single Pulse Avalanche Energy (Note 1) 531 mJ
Power Dissipation 188 W
PD
Derate above 25oC 1.25 W/oC
oC
TJ, TSTG Operating and Storage Temperature -55 to +175

Thermal Characteristics
RθJC o
Thermal Resistance Junction to Case 0.8 C/W
o
RθJA Thermal Resistance Junction to Ambient (Note 2) 62 C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDP8443 FDP8443 TO-220AB Tube N/A 50 units

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V
VDS = 32V, - - 1
IDSS Zero Gate Voltage Drain Current μA
VGS = 0V TC = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2 2.8 4 V
ID = 80A, VGS= 10V - 2.7 3.5
rDS(on) Drain to Source On Resistance ID = 80A, VGS= 10V, mΩ
- 4.7 6.1
TJ = 175oC

Dynamic Characteristics
Ciss Input Capacitance - 9310 - pF
VDS = 25V, VGS = 0V,
Coss Output Capacitance - 800 - pF
f = 1MHz
Crss Reverse Transfer Capacitance - 510 - pF
RG Gate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Ω
Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 142 185 nC
Qg(TH) Threshold Gate Charge VGS = 0 to 2V VDD = 20V - 17.5 23 nC
Qgs Gate to Source Gate Charge ID = 35A - 36 - nC
Qgs2 Gate Charge Threshold to Plateau Ig = 1mA - 18.8 - nC
Qgd Gate to Drain “Miller“ Charge - 32 - nC

FDP8443 Rev. A 2 www.fairchildsemi.com

 FDP8443 N-Channel PowerTrench® MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics (VGS = 10V)

ton Turn-On Time - - 58 ns
td(on) Turn-On Delay Time - 18.4 - ns
VDD = 20V, ID = 35A
tr Rise Time - 17.9 - ns
VGS = 10V, RGS = 2Ω
td(off) Turn-Off Delay Time - 55 - ns
tf Fall Time - 13.5 - ns
toff Turn-Off Time - - 109 ns

Drain-Source Diode Characteristics

ISD = 35A - 0.8 1.25
VSD Source to Drain Diode Voltage V
ISD = 15A - 0.8 1.0
trr Reverse Recovery Time - 42 55 ns
ISD = 35A, dISD/dt = 100A/μs
Qrr Reverse Recovery Charge - 48 62 nC

Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.

FDP8443 Rev. A 3 www.fairchildsemi.com

 FDP8443 N-Channel PowerTrench® MOSFET
Typical Characteristics

1.2 200
CURRENT LIMITED VGS = 10V
POWER DISSIPATION MULIPLIER

BY PACKAGE
1.0 160

ID, DRAIN CURRENT (A)

0.8
120
0.6
80
0.4

40
0.2

0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC) TC, CASE TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs
Temperature Case Temperature
2
1 DUTY CYCLE - DESCENDING ORDER

D = 0.50
NORMALIZED THERMAL

0.20
IMPEDANCE, ZθJC

0.10
PDM
0.1 0.05
0.02
0.01
t1
t2
0.01 NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC

SINGLE PULSE
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance

5000
VGS = 10V TRANSCONDUCTANCE TC = 25oC
MAY LIMIT CURRENT FOR TEMPERATURES
IN THIS REGION ABOVE 25oC DERATE PEAK
1000
IDM, PEAK CURRENT (A)

CURRENT AS FOLLOWS:

I = I2 175 - TC
150

100

SINGLE PULSE
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDP8443 Rev. A 4 www.fairchildsemi.com

 FDP8443 N-Channel PowerTrench® MOSFET
Typical Characteristics

1000 500
If R = 0
10us tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

IAS, AVALANCHE CURRENT (A)

If R ≠ 0
ID, DRAIN CURRENT (A)

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

100us 100
100

STARTING TJ = 25oC
10
LIMITED 10
BY PACKAGE
1ms STARTING TJ = 150oC
1
OPERATION IN THIS SINGLE PULSE 10ms
AREA MAY BE TJ = MAX RATED
LIMITED BY rDS(on) o DC
TC = 25 C
1
0.1 0.01 0.1 1 10 100 1000 5000
1 10 100 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching
Capability

160 200
PULSE DURATION = 80μs PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX VGS = 10V
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)

VDD = 5V 160
120
VGS = 5V
TJ = 175oC VGS = 4.5V
120
80
TJ = 25oC 80
TJ = -55oC
40
40
VGS = 4V

0 0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

80 1.8
DRAIN TO SOURCE ON-RESISTANCE

ID = 80A PULSE DURATION = 80μs

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO SOURCE

1.6
ON-RESISTANCE (mΩ)

60
TJ = 25oC 1.4
NORMALIZED

o
40 TJ = 175 C 1.2

1.0
20
0.8 ID = 80A
VGS = 10V
0 0.6
3 4 5 6 7 8 9 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE(oC)

Figure 9. Drain to Source On-Resistance Figure 10. Normalized Drain to Source On

Variation vs Gate to Source Voltage Resistance vs Junction Temperature

FDP8443 Rev. A 5 www.fairchildsemi.com

 FDP8443 N-Channel PowerTrench® MOSFET
Typical Characteristics

1.2 1.15
VGS = VDS ID = 1mA

NORMALIZED DRAIN TO SOURCE

ID = 250μA
1.10
THRESHOLD VOLTAGE

BREAKDOWN VOLTAGE
1.0
NORMALIZED GATE

1.05
0.8
1.00

0.6
0.95

0.4 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC) TJ, JUNCTION TEMPERATURE (oC)

Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source
Junction Temperature Breakdown Voltage vs Junction Temperature

20000 10
VGS, GATE TO SOURCE VOLTAGE(V) ID = 35A
Ciss
10000
8 VDD = 15V
CAPACITANCE (pF)

VDD = 20V
Coss 6 VDD = 25V

1000
4
Crss

f = 1MHz 2
VGS = 0V

100 0
0.1 1 10 50 0 20 40 60 80 100 120 140 160
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC)

Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge vs Gate to Source Voltage
Voltage

FDP8443 Rev. A 6 www.fairchildsemi.com

 FDP8443 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx® Green FPS™ Power247® SuperSOT™-8
Build it Now™ Green FPS™ e-Series™ POWEREDGE® SyncFET™
CorePLUS™ GTO™ Power-SPM™ The Power Franchise®
CROSSVOLT™ i-Lo™ PowerTrench®
CTL™ IntelliMAX™ Programmable Active Droop™
Current Transfer Logic™ ISOPLANAR™ QFET® TinyBoost™
EcoSPARK® MegaBuck™ QS™ TinyBuck™
TinyLogic®
®
MICROCOUPLER™ QT Optoelectronics™
Fairchild® MicroFET™ Quiet Series™ TINYOPTO™
Fairchild Semiconductor® MicroPak™ RapidConfigure™ TinyPower™
FACT Quiet Series™ MillerDrive™ SMART START™ TinyPWM™
FACT® Motion-SPM™ SPM® TinyWire™
FAST® OPTOLOGIC® STEALTH™ µSerDes™
FastvCore™ OPTOPLANAR® SuperFET™ UHC®
FPS™ ® SuperSOT™-3 UniFET™
FRFET® PDP-SPM™ SuperSOT™-6 VCX™
Global Power ResourceSM Power220®

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UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
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which, (a) are intended for surgical implant into the body or device, or system whose failure to perform can be
(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
in a significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
This datasheet contains the design specifications for product
Formative or In Design
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be
First Production published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
Full Production
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been
Not In Production discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.

Rev. I31

FDP8443 Rev. A 7 www.fairchildsemi.com