FDB86363_F085 N-Channel PowerTrench® MOSFET

June 2014

FDB86363_F085
N-Channel PowerTrench® MOSFET
D D
80 V, 110 A, 2.4 mΩ

Features
„ Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A
„ Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A G
„ UIS Capability G S
„ RoHS Compliant TO-263 S
„ Qualified to AEC Q101 FDB SERIES
Applications
For current package drawing, please refer to the Fairchild
„ Automotive Engine Control website at www.fairchildsemi.com/packaging
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems

MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.

Symbol Parameter Ratings Units

VDSS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110
ID A
Pulsed Drain Current TC = 25°C See Figure 4
EAS Single Pulse Avalanche Energy (Note 2) 512 mJ
Power Dissipation 300 W
PD
Derate Above 25oC 2.0 W/oC
oC
TJ, TSTG Operating and Storage Temperature -55 to + 175
oC/W
RθJC Thermal Resistance, Junction to Case 0.5
oC/W
RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 43

Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.25mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB86363 FDB86363_F085 D2-PAK(TO-263) 330mm 24mm 800 units

©2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDB86363_F085 Rev. C2
 FDB86363_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain-to-Source Breakdown Voltage ID = 250μA, VGS = 0V 80 - - V
VDS = 80V, TJ = 25oC - - 1 μA
IDSS Drain-to-Source Leakage Current
VGS = 0V TJ = 175oC (Note 4) - - 1 mA
IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2.0 3.0 4.0 V
ID = 80A, TJ = 25oC - 2.0 2.4 mΩ
RDS(on) Drain to Source On Resistance
VGS= 10V TJ = 175oC (Note 4) - 3.8 4.3 mΩ

Dynamic Characteristics
Ciss Input Capacitance - 10000 - pF
VDS = 40V, VGS = 0V,
Coss Output Capacitance - 1400 - pF
f = 1MHz
Crss Reverse Transfer Capacitance - 95 - pF
Rg Gate Resistance f = 1MHz - 3.3 - Ω
Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 64V - 131 150 nC
Qg(th) Threshold Gate Charge VGS = 0 to 2V ID = 80A - 18 21 nC
Qgs Gate-to-Source Gate Charge - 47 - nC
Qgd Gate-to-Drain “Miller“ Charge - 24 - nC

Switching Characteristics

ton Turn-On Time - - 231 ns

td(on) Turn-On Delay - 38 - ns
tr Rise Time VDD = 40V, ID = 80A, - 129 - ns
td(off) Turn-Off Delay VGS = 10V, RGEN = 6Ω - 64 - ns
tf Fall Time - 40 - ns
toff Turn-Off Time - - 135 ns

Drain-Source Diode Characteristics

ISD =80A, VGS = 0V - - 1.25 V
VSD Source-to-Drain Diode Voltage
ISD = 40A, VGS = 0V - - 1.2 V
trr Reverse-Recovery Time IF = 80A, dISD/dt = 100A/μs, - 88 101 ns
Qrr Reverse-Recovery Charge VDD=64V - 129 157 nC

Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

FDB86363_F085 Rev. C2 2 www.fairchildsemi.com

 FDB86363_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics

1.2 300
POWER DISSIPATION MULTIPLIER

CURRENT LIMITED VGS = 10V

1.0 250 BY PACKAGE

ID, DRAIN CURRENT (A)

CURRENT LIMITED
BY SILICON
0.8 200

0.6 150

0.4 100

0.2 50

0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE(oC) TC, CASE TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
NORMALIZED THERMAL

D = 0.50
IMPEDANCE, ZθJC

0.20
0.10 PDM
0.05
0.02
0.1 0.01 t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TC

0.01
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance

10000
VGS = 10V

1000
IDM, PEAK CURRENT (A)

100
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK

10 CURRENT AS FOLLOWS:

I = I2 175 - TC
150
SINGLE PULSE
1
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDB86363_F085 Rev. C2 3 www.fairchildsemi.com

 FDB86363_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics

2000 1000
If R = 0
1000 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

IAS, AVALANCHE CURRENT (A)

If R ≠ 0
ID, DRAIN CURRENT (A)

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

100 100
100us STARTING TJ = 25oC

10
OPERATION IN THIS
AREA MAY BE 10
LIMITED BY rDS(on) 1ms
1 STARTING TJ = 150oC
SINGLE PULSE 10ms
TJ = MAX RATED
100ms
TC = 25oC
0.1 1
0.001 0.01 0.1 1 10 100 1000
1 10 100 200 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching
Capability

300 300
PULSE DURATION = 80μs
IS, REVERSE DRAIN CURRENT (A)

DUTY CYCLE = 0.5% MAX 100 VGS = 0 V

250
VDD = 5V
ID, DRAIN CURRENT (A)

200 10
TJ = 175 oC
TJ = 175oC TJ = 25 oC
150
TJ = 25oC 1
100
TJ = -55oC
0.1
50

0 0.01
2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics

300 300

250
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS 250 VGS

15V Top 15V Top
10V 10V
200 8V 200 8V 5.5V
7V 7V
6V 6V
150 5.5V 150 5V 5.5V
5V Bottom 5V Bottom

100 100
5V

50 80μs PULSE WIDTH 50 80μs PULSE WIDTH

Tj=25oC Tj=175oC
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics

FDB86363_F085 Rev. C2 4 www.fairchildsemi.com

 FDB86363_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics

30 2.0

DRAIN TO SOURCE ON-RESISTANCE

ID = 80A PULSE DURATION = 80μs PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO SOURCE

25
ON-RESISTANCE (mΩ)

1.6
20

NORMALIZED
TJ = 175oC TJ = 25oC
15 1.2

10
0.8
ID = 80A
5
VGS = 10V

0 0.4
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE(oC)

Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature

1.5 1.10
VGS = VDS ID = 5mA
NORMALIZED DRAIN TO SOURCE

ID = 250μA
1.2
THRESHOLD VOLTAGE

BREAKDOWN VOLTAGE

1.05
NORMALIZED GATE

0.9
1.00
0.6

0.95
0.3

0.0 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC) TJ, JUNCTION TEMPERATURE (oC)

Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs. Junction Temperature

100000 10
VGS, GATE TO SOURCE VOLTAGE(V)

ID = 80A
VDD = 32V
Ciss
CAPACITANCE (pF)

8
10000
VDD = 40V VDD = 48V
Coss 6
1000
4

100 Crss
2
f = 1MHz
VGS = 0V
10 0
0.1 1 10 100 0 30 60 90 120 150
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC)

Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source
Voltage Voltage

FDB86363_F085 Rev. C2 5 www.fairchildsemi.com

 TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I68

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