IRF634B — N-Channel BFET MOSFET

December 2013

IRF634B
N-Channel BFET MOSFET
250 V, 8.1 A, 450 mΩ
Description Features
These N-Channel enhancement mode power field effect • 8.1 A, 250 V, RDS(on) = 450 mΩ @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low Gate Charge (Typ. 29 nC)
planar, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, • Low Crss (Typ. 20 pF)
provide superior switching performance, and withstand • Fast Switching
high energy pulse in the avalanche and commutation
• 100% Avalanche Tested
mode. These devices are well suited for high efficiency
switching DC/DC converters and switch mode power • Improved dv/dt Capability
supplies.

G G
D
S TO-220

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter IRF634B_FP001 Unit

VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25°C) 8.1 A
- Continuous (TC = 100°C) 5.1 A
IDM Drain Current - Pulsed (Note 1) 32.4 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ
IAR Avalanche Current (Note 1) 8.1 A
EAR Repetitive Avalanche Energy (Note 1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns
PD Power Dissipation (TC = 25°C) 74 W
- Derate above 25°C 0.59 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter IRF634B_FP001 Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 1.69 °C/W
RθCS Thermal Resistance, Case-to-Sink, Max. 0.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

©2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

IRF634B Rev. C0
 IRF634B — N-Channel BFET MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
IRF634B_FP001 IRF634B TO-220 Tube N/A N/A 50 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 250 -- -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25°C -- 0.27 -- V/°C
/ ΔTJ Coefficient
IDSS VDS = 250 V, VGS = 0 V -- -- 10 μA
Zero Gate Voltage Drain Current
VDS = 200 V, TC = 125°C -- -- 100 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 4.05 A -- 0.345 0.45 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 4.05 A -- 7.6 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 780 1000 pF
Coss Output Capacitance f = 1.0 MHz -- 95 125 pF
Crss Reverse Transfer Capacitance -- 20 25 pF

Switching Characteristics
td(on) Turn-On Delay Time VDD = 125 V, ID = 8.1 A, ) -- 15 40 ns
tr Turn-On Rise Time RG = 25 Ω -- 75 160 ns
td(off) Turn-Off Delay Time -- 100 210 ns
tf Turn-Off Fall Time (Note 4) -- 65 140 ns
Qg Total Gate Charge VDS = 200 V, ID = 8.1 A, -- 29 38 nC
Qgs Gate-Source Charge VGS = 10 V -- 4.2 -- nC
Qgd Gate-Drain Charge (Note 4) -- 14 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.1 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.4 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.1 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 8.1 A, -- 170 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/μs -- 0.91 -- μC

Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 4.9 mH, IAS = 8.1 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 8.1 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.

©2001 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

IRF634B Rev. C0
 IRF634B — N-Channel BFET MOSFET
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
10
1 7.0 V 1
10
6.5 V
6.0 V
5.5 V
ID, Drain Current [A]

ID, Drain Current [A]

Bottom : 5.0 V
o
150 C

0 0
10 10
o
25 C
o
-55 C
※ Notes : ※ Notes :
1. 250μs Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250μs Pulse Test

-1 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2.5
Drain-Source On-Resistance

2.0 VGS = 10V IDR, Reverse Drain Current [A] 10

1
RDS(ON) [Ω ],

1.5 VGS = 20V

1.0 10
0

150℃ 25℃
0.5 ※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

-1
0.0 10
0 6 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 50V
10
VGS, Gate-Source Voltage [V]

VDS = 125V
1500
Ciss 8 VDS = 200V
Capacitance [pF]

1000 Coss 6

Crss 4
※ Notes :
500 1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 8.1 A

0 0
10
-1
10
0
10
1 0 5 10 15 20 25 30

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2001 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

IRF634B Rev. C0
 IRF634B — N-Channel BFET MOSFET
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage
2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 μA 0.5 1. VGS = 10 V
2. ID = 4.05 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

10
2
10
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A] 8

100 μs
ID, Drain Current [A]

1
10 1 ms 6

10 ms
DC
4
0
10
※ Notes :
o
1. TC = 25 C 2
o
2. TJ = 150 C
3. Single Pulse

-1
10 0
0
10
1
10 10
2 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
ZθJC(t), Thermal Response [oC/W]

0
10
D = 0 .5
Zθ JC(t), Thermal Response

※ N o te s :
1 . Z θ J C (t) = 1 .6 9 ℃ /W M a x .
0 .2 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1

-1 0 .0 5
10
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

©2001 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

IRF634B Rev. C0
 IRF634B — N-Channel BFET MOSFET
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2001 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

IRF634B Rev. C0
 IRF634B — N-Channel BFET MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2001 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

IRF634B Rev. C0
 IRF634B — N-Channel BFET MOSFET
Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

©2001 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

IRF634B Rev. C0
 IRF634B — N-Channel BFET MOSFET
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66

©2001 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

IRF634B Rev. C0