IRFL4105PbF
 Surface Mount HEXFET® Power MOSFET
 Advanced Process Technology
 Ultra Low On-Resistance   VDSS 55V
 Dynamic dv/dt Rating
 Fast Switching RDS(on) 0.045
 Fully Avalanche Rated
ID 3.7A
 Lead-Free

Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety SOT-223
of applications.
The SOT-223 package is designed for surface-mount using vapor G D S
phase, infra red, or wave soldering techniques. Its unique
package design allows for easy automatic pick-and-place as with Gate Drain Source
other SOT or SOIC packages but has the added advantage of
improved thermal performance due to an enlarged tab for heat
sinking. Power dissipation of 1.0W is possible in a typical surface
mount application.

Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFL4105PbF SOT-223 Tape and Reel 2500 IRFL4105PbF

Absolute Maximum Ratings

Symbol Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V  5.2
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V  3.7
A 
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V  3.0
IDM Pulsed Drain Current  30
PD @TA = 25°C Maximum Power Dissipation (PCB Mount)  2.1
W
PD @TA = 25°C Maximum Power Dissipation (PCB Mount)  1.0
Linear Derating Factor (PCB Mount)  8.3 mW/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited)  110 mJ
IAR Avalanche Current  3.7 A
EAR Repetitive Avalanche Energy  0.10 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
TJ Operating Junction and -55 to + 150
°C 
TSTG Storage Temperature Range

Thermal Resistance  
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient (PCB Mount, steady state)  90 120
°C/W
RJA Junction-to-Ambient (PCB Mount, steady state)  50 60

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.045  VGS = 10V, ID = 3.7A 
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 3.8 ––– ––– S VDS = 25V, ID = 1.9A
––– ––– 25 VDS = 55 V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– 23 35 ID = 3.7A
Qgs Gate-to-Source Charge ––– 3.4 5.1 nC   VDS = 44V
Qgd Gate-to-Drain Charge ––– 9.8 15 VGS = 10V , See Fig. 6 and 13 
td(on) Turn-On Delay Time ––– 7.1 ––– VDD = 28V
tr Rise Time ––– 12 ––– ID = 3.7A
ns
td(off) Turn-Off Delay Time ––– 19 ––– RG= 6.0
tf Fall Time ––– 12 ––– RD= 7.5See Fig. 10 
Ciss Input Capacitance ––– 660 ––– VGS = 0V
Coss Output Capacitance ––– 230 ––– pF   VDS = 25V
Crss Reverse Transfer Capacitance ––– 99 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 1.3
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 30
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 3.7A,VGS = 0V 
trr Reverse Recovery Time ––– 55 82 ns TJ = 25°C ,IF = 3.7A
Qrr Reverse Recovery Charge ––– 120 170 nC di/dt = 100A/µs 

Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 starting TJ = 25°C, L = 16mH, RG = 25, IAS = 3.7A (See fig. 12)
 ISD 3.7A, di/dt 110A/µs, VDD V(BR)DSS, TJ  150°C.
 Pulse width 300µs; duty cycle  2%.

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100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V

I , Drain-to-Source Current (A)

I , Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10 10

4.5V
4.5V

D
D

20µs PULSE WIDTH 20µs PULSE WIDTH

TC = 25°C TJ = 150°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

100 2.0
I D = 3.7A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

1.5
TJ = 25°C
TJ = 150°C
(Normalized)

10 1.0

0.5

VDS = 25V
20µs PULSE WIDTH VGS = 10V
1 0.0 A
A
4.0 4.5 5.0 5.5 6.0 6.5 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance

vs. Temperature

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1200 20
V GS = 0V, f = 1MHz I D = 3.7A
C iss = Cgs + C gd , Cds SHORTED VDS = 24V
C rss = C gd

V GS , Gate-to-Source Voltage (V)

1000
VDS = 15V
C oss = Cds + C gd 16
Ciss
C, Capacitance (pF)

800
Coss 12

600

8
400
Crss
4
200

FOR TEST CIRCUIT

SEE FIGURE 9
0 A 0 A
1 10 100 0 10 20 30 40
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

10µs
I D , Drain Current (A)

10
100µs
TJ = 150°C
10
1ms
TJ = 25°C
1
10ms

TA = 25°C
TJ = 150°C
VGS = 0V Single Pulse
1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig. 7 Typical Source-to-Drain Diode

Fig 8. Maximum Safe Operating Area
Forward Voltage

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Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms

1000
Thermal Response (ZthJA )

100
D = 0.50

0.20

10 0.10
0.05

0.02
0.01 PDM
1

t
1
t
0.1 SINGLE PULSE
2
(THERMAL RESPONSE) Notes:  
1. Duty factor D = t /t
1 2
2. Peak TJ = PDM x Z thJA + T   
A      
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000

t 1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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300
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 1.7A
3.0A
250
BOTTOM 3.7A
15V

200
L DRIVER
VDS

150
RG D.U.T +
V
- DD
IAS A
100
20V
tp 0.01

50
Fig 12a. Unclamped Inductive Test Circuit
VDD = 25V
0 A
25 50 75 100 125 150
V(BR)DSS Starting TJ , Junction Temperature (°C)
tp Fig 12c. Maximum Avalanche Energy
vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

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IRFL4105PbF

Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

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IRFL4105PbF
SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches)

SOT-223(TO-261AA) Part Marking Information

FL014N

Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

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IRFL4105PbF

SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)

4.10 (.161) 0.35 (.013)

3.90 (.154) 1.85 (.072)
2.05 (.080) 1.65 (.065) 0.25 (.010)

TR 1.95 (.077)

7.55 (.297)
7.45 (.294)
16.30 (.641)
7.60 (.299) 15.70 (.619)
7.40 (.292)

1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
7.10 (.279) 2.30 (.090)
6.90 (.272) 2.10 (.083)
12.10 (.475)
11.90 (.469)

NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

13.20 (.519) 15.40 (.607)

12.80 (.504) 11.90 (.469)

330.00 50.00 (1.969)

(13.000) MIN.
MAX.

18.40 (.724)
NOTES :
MAX.
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4
3. DIMENSION MEASURED @ HUB. 12.40 (.488)
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

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IRFL4105PbF
Qualification Information†  
Industrial
Qualification Level  
(per JEDEC JESD47F) ††
MSL1
Moisture Sensitivity Level   SOT-223
(per JEDEC J-STD-020D) ††
RoHS Compliant Yes

† Qualification standards can be found at Infineon’s web site www.infineon.com

†† Applicable version of JEDEC standard at the time of product release.

Revision History

Date Comments
 Updated datasheet with corporate template.
5/27/2016
 Added disclaimer on last page.

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