PD - 91278

IRF1010N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 11mΩ
l Fast Switching G
l Fully Avalanche Rated ID = 85A‡
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ T C = 25°C Continuous Drain Current, V GS @ 10V 85‡
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A
IDM Pulsed Drain Current  290
PD @TC = 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 3.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.85
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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IRF1010N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 43A„
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, V GS = 0V, T J = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 120 ID = 43A
Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– VDD = 28V
tr Rise Time ––– 76 ––– ID = 43A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω
tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 3210 ––– VGS = 0V

Coss Output Capacitance ––– 690 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy‚ ––– 1030…250† mJ IAS = 4.3A, L = 270µH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 85‡
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 290

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, I S = 43A, V GS = 0V „

trr Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A
Qrr Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 43A, di/dt ≤ 210A/µs, V DD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) T J ≤ 175°C
‚ Starting T J = 25°C, L = 270µH „ Pulse width ≤ 400µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12) … This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to T J = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
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 IRF1010N

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V

I D , Drain-to-Source Current (A)

8.0V
I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V
4.5V
10 10

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
ID = 85A
R DS(on) , Drain-to-Source On Resistance

TJ = 25 ° C
I D , Drain-to-Source Current (A)

2.0
TJ = 175 ° C
(Normalized)

1.5

10

1.0

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
1 0.0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF1010N

20
6000 ID = 43A
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED VDS = 44V

VGS , Gate-to-Source Voltage (V)

5000 Crss = Cgd VDS = 27V
16
Coss = Cds + Cgd VDS = 11V
C, Capacitance(pF)

4000 Ciss
12

3000
Coss
8
2000

1000 Crss 4

FOR TEST CIRCUIT

0 SEE FIGURE 13
0
1 10 100 0 20 40 60 80 100 120

VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100
TJ = 175 ° C
100

100µsec
10

10 1msec
1 TJ = 25 ° C
Tc = 25°C
Tj = 175°C 10msec
V GS = 0 V Single Pulse
0.1 1
0.0 0.6 1.2 1.8 2.4
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF1010N

100
RD
LIMITED BY PACKAGE VDS

VGS
80 D.U.T.
RG
I D , Drain Current (A)

+
-VDD
60
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40

Fig 10a. Switching Time Test Circuit

20
VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

D = 0.50
Thermal Response (Z thJC )

0.20

0.10
0.1

0.05 P DM
SINGLE PULSE
0.02 (THERMAL RESPONSE) t1
0.01
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1010N

500
ID

EAS , Single Pulse Avalanche Energy (mJ)

15V
TOP 18A
30A
L DR IV E R 400 BOTTOM 43A
VDS

RG D .U .T + 300
V
- DD
IA S A
2V0GS
V
tp 0 .0 1 Ω
200

Fig 12a. Unclamped Inductive Test Circuit

100
V (B R )D S S
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature( ° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRF1010N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by R G +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET® power MOSFETs

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IRF1010N
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.7 8 (.149 ) -B-
2.87 (.11 3) 10.29 (.405) 3.54 ( .139) 4. 69 ( .185 )
2.62 (.10 3) 4.20 (.165 )
-A - 1. 32 ( .052)
1. 22 ( .048)
6.47 (.255)
6.10 (.240)
4
15.24 ( .60 0)
14. 84 ( .58 4)
1.15 (.04 5) LE A D A S S IG N M E N T S
M IN 1 - G ATE
1 2 3 2 - D R A IN
3 - SOURCE
4 - D R A IN
14. 09 ( .55 5)
13. 47 ( .53 0) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022 )

3X 3X
0.69 (.027) 0.46 (.018 )
1 .40 ( .0 55)
3X
1 .15 ( .0 45) 0. 36 ( .014) M B A M
2. 92 (.115)
2. 64 (.104)
2. 54 (.100 )
2X
NO T ES:
1 DI M E N S IO NI NG & T O LE RANCI N G PER ANSI Y1 4.5M , 1 982. 3 O U T LIN E CONF OR M S TO J E DEC OUT LIN E T O -2 20AB.
2 C O N TR O LLIN G D IM E N S IO N : IN C H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T INCL UDE BURRS.

Part Marking Information

TO-220AB
E X A M P L E : TH IS IS AN I R F 1 0 1 0
W ITH ASSE M B L Y A
LOT C O DE 9 B1M IN TE R N A T IO N A L PART NUMBER
R E C T IF IE R
IR F 1 0 1 0
LO GO 92 4 6
9B 1M DA TE C O DE
A S SEMBL Y
(YYW W )
LOT CODE
YY = YE A R
WW = WE E K

Data and specifications subject to change without notice.

This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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