PD - 9.

1370C

IRL3705N
HEXFET® Power MOSFET
l Logic-Level Gate Drive D
l Advanced Process Technology VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 0.01Ω
l Fast Switching G
l Fully Avalanche Rated
ID = 89A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 63 A
IDM Pulsed Drain Current  310
PD @TC = 25°C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy‚ 340 mJ
IAR Avalanche Current 46 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.90
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

8/25/97
IRL3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.010 VGS = 10V, ID = 46A „
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.012 Ω VGS = 5.0V, I D = 46A „
––– ––– 0.018 VGS = 4.0V, I D = 39A „
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS , ID = 250µA
gfs Forward Transconductance 50 ––– ––– S VDS = 25V, ID = 46A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– ––– 98 ID = 46A
Q gs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 49 V GS = 5.0V, See Fig. 6 and 13 „
t d(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
tr Rise Time ––– 140 ––– I D = 46A
ns
t d(off) Turn-Off Delay Time ––– 37 ––– RG = 1.8Ω, VGS = 5.0V
tf Fall Time ––– 78 ––– RD = 0.59Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 ––– nH
6mm (0.25in.)
G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 3600 ––– VGS = 0V

Coss Output Capacitance ––– 870 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 89
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 310

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V „
t rr Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 46A
Q rr Reverse RecoveryCharge ––– 290 440 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
ƒ ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
 IRL3705N

1000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
ID , D ra in -to -S o u rc e C u rre n t (A )

ID , D ra in -to -S o u rc e C u rre n t (A )
6.0V 6.0V
4.0V 4.0V
3.0V 3.0V
BOTT OM 2.5V BOTT OM 2.5V
100 100

10 10 2.5 V

2 .5V
20 µ s PU LSE W ID TH 20 µ s PU LSE W ID TH
T J = 2 5°C T J = 1 75°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , Drain-to-Source V oltage (V ) V D S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = 77 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D r ain- to-S ourc e C urre nt (A )

2.5
TJ = 2 5 °C

TJ = 1 7 5 ° C
100 2.0
(N o rm a li ze d )

1.5

10 1.0

0.5

V DS = 2 5 V
2 0 µ s P U L S E W ID T H V G S = 10 V
1 0.0
A A
2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRL3705N

6000 15
V GS = 0V , f = 1 MH z I D = 4 6A
C iss = C gs + C gd , C ds SH O R TED V DS = 4 4V

V G S , G a te -to -S o u rce V o lta g e (V )

C rs s = C gd V DS = 2 8V
5000 C is s C os s = C ds + C gd 12
C , C a p a c ita n c e (p F )

4000
9

3000 C os s
6
2000

C rs s 3
1000

FO R TES T C IR CU IT
SEE FIG U R E 13
0 A 0 A
1 10 100 0 20 40 60 80 100 120 140
V D S , D rain-to-S ource Voltage (V ) Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e v e rse D ra in C u rre n t (A )

10µ s
I D , D ra in C u rre n t (A )

100

100µ s
100

TJ = 1 75°C
1 ms
T J = 2 5°C 10

10m s

T C = 25 °C
T J = 17 5°C
VG S = 0 V S ing le Pulse
10 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 10 100
V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRL3705N

100
RD
LIMITED BY PACKAGE VDS

VGS
80 D.U.T.
RG
ID , Drain Current (A)

+
-VDD
60
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40

Fig 10a. Switching Time Test Circuit

20
VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

D = 0.50
(Z thJC )

0.20
Thermal Response

0.10
0.1

0.05 PDM

0.02 SINGLE PULSE t1

0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL3705N

800
ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
TO P 1 9A
33A
15 V BO TTOM 46 A
600

L D R IV E R
VD S

400
RG D .U .T +
V
- DD
IA S A
10V
tp 0 .0 1 Ω 200

Fig 12a. Unclamped Inductive Test Circuit

V D D = 2 5V
0 A
25 50 75 100 125 150 175
Starting TJ , Junction T emperature (°C)
V (BR )D SS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current

I AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

5.0 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRL3705N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS
IRL3705N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)

2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )

6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 ) 3 X 0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
1 .4 0 (. 0 5 5 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E XEAM PLE
X AM : T: HITSHI IS
PLE S ISA NA NIRFIRF
1010
1010
W ITWHIT HA SASSESMB LY LY
E MB A A
LOLO T CO
T CODEDE 9B 9B
1M1M IN TE R NA
IN TE T ION
R NA A LA L
T ION P APRT NUNU
A RT M BE R R
M BE
R EC T IFTIER
R EC IF IER IR FIR1010
F 1010
LOLO
GOGO 9246
9246
9B 9B 1M1M D ADTE C OD E E
A TE C OD
A SASSEM B LY
S EM B LY (Y YW
(Y YWW )W )
LOLO
T T COCODEDE Y YY =Y YE A RA R
= YE
WW W W= W = EWEK
E EK

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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