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IRF3205PbF
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance D
Dynamic dv/dt Rating VDSS = 55V
175°C Operating Temperature
Fast Switching RDS(on) = 8.0mΩ
Fully Avalanche Rated G
Lead-Free ID = 110A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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10/31/03
IRF3205PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 146 ID = 62A
Qgs Gate-to-Source Charge ––– ––– 35 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
tr Rise Time ––– 101 ––– ID = 62A
ns
td(off) Turn-Off Delay Time ––– 50 ––– RG = 4.5Ω
tf Fall Time ––– 65 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V
trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A
Qrr Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 ) Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 138µH junction temperature. Package limitation current is 75A.
RG = 25Ω, IAS = 62A. (See Figure 12)
This is a typical value at device destruction and represents
ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS, operation outside rated limits.
TJ ≤ 175°C This is a calculated value limited to TJ = 175°C.
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IRF3205PbF
1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
10 10
4.5V
1000 2.5
RDS(on) , Drain-to-Source On Resistance
ID = 107A
I D , Drain-to-Source Current (A)
TJ = 25 ° C
2.0
TJ = 175° C
100
(Normalized)
1.5
1.0
10
0.5
V DS= 25V
20µs PULSE WIDTH VGS = 10V
1 0.0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)
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IRF3205PbF
6000 16
VGS = 0V, f = 1 MHZ ID = 62A
Ciss = Cgs + Cgd, Cds SHORTED V DS= 44V
4000
Ciss 10
3000 8
6
2000 Coss
4
1000
Crss 2
0 0
1 10 100 0 20 40 60 80 100 120
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 175° C
100 1000
ID , Drain Current (A)
10us
10 100
100us
TJ = 25 ° C
1ms
1 10
10ms
TC = 25 °C
TJ = 175 °C
V GS = 0 V Single Pulse
0.1 1
0.2 0.8 1.4 2.0 2.6 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
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IRF3205PbF
RD
120 VDS
-
80
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
20 90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C) 10%
VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
1
Thermal Response(Z thJC )
D = 0.50
0.20
0.1 0.10
0.05 PDM
SINGLE PULSE t1
0.02 (THERMAL RESPONSE)
0.01 t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRF3205PbF
500
300
RG D.U.T +
- VDD
IAS A
20V
tp 0.01Ω 200
V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting T J, Junction Temperature ( ° C)
I AS
50KΩ
12V .2µF
QG .3µF
10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF3205PbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/03
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