PD - 94965B

IRF1010EPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance D
VDSS = 60V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching RDS(on) = 12mΩ
G
l Fully Avalanche Rated
l Lead-Free ID = 84A‡
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84‡
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A
IDM Pulsed Drain Current  330
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 4.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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IRF1010EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 12 mΩ VGS = 10V, ID = 50A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 69 ––– ––– S VDS = 25V, ID = 50A„
––– ––– 25 VDS = 60V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 130 ID = 50A
Qgs Gate-to-Source Charge ––– ––– 28 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 44 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 30V
tr Rise Time ––– 78 ––– ID = 50A
ns
td(off) Turn-Off Delay Time ––– 48 ––– RG = 3.6Ω
tf Fall Time ––– 53 ––– VGS = 10V, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G

LS Internal Source Inductance ––– 7.5 –––

and center of die contact S

Ciss Input Capacitance ––– 3210 ––– VGS = 0V

Coss Output Capacitance ––– 690 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy‚ ––– 1180…320† mJ IAS = 50A, L = 260µH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 84‡

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 330

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V „
trr Reverse Recovery Time ––– 73 110 ns TJ = 25°C, IF = 50A
Qrr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11) … This is a typical value at device destruction and represents
‚ Starting TJ = 25°C, L = 260µH operation outside rated limits.
RG = 25Ω, IAS = 50A, VGS =10V (See Figure 12) † This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
ƒ ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C junction temperature. Package limitation current is 75A.

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 IRF1010EPbF

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100

100
4.5V
10
4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 ° C
1 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
ID = 84A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5
TJ = 25 ° C

2.0
(Normalized)

TJ = 175 ° C

100 1.5

1.0

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
10 0.0
4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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 IRF1010EPbF
6000
VGS = 0V, f = 1 MHZ
20
Ciss = Cgs + Cgd, Cds SHORTED ID = 50A
5000 Crss = Cgd
VDS = 48V

VGS , Gate-to-Source Voltage (V)

Coss = Cds + Cgd VDS = 30V
16
VDS = 12V
C, Capacitance(pF)

4000 Ciss

3000
12

Coss
2000 8

1000 Crss
4

0
FOR TEST CIRCUIT
1 10 100 SEE FIGURE 13
0
VDS, Drain-to-Source Voltage (V) 0 20 40 60 80 100 120 140
QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100
TJ = 175 ° C
100

100µsec
10

TJ = 25 ° C 10 1msec
1

Tc = 25°C
Tj = 175°C 10msec
V GS = 0 V Single Pulse
0.1 1
0.0 0.6 1.2 1.8 2.4
VSD ,Source-to-Drain Voltage (V) 1 10 100 1000
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF1010EPbF

100 RD
LIMITED BY PACKAGE VDS

VGS
80 D.U.T.
RG
ID , Drain Current (A)

+
-VDD
60
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40

Fig 10a. Switching Time Test Circuit

20
VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

0.05 PDM

SINGLE PULSE t1
0.02
(THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1010EPbF

800
ID

EAS , Single Pulse Avalanche Energy (mJ)

15V
TOP 20A
35A
BOTTOM 50A
L DRIVER
VDS 600

RG D.U.T +
V
- DD
IAS A
400
20V
VGS
tp 0.01Ω

Fig 12a. Unclamped Inductive Test Circuit

200

V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRF1010EPbF
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET® power MOSFETs

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IRF1010EPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

E XAMPLE : T HIS IS AN IR F 1010
LOT CODE 1789 INT E R NAT IONAL PAR T NU MBE R
AS S E MB LE D ON WW 19, 2000 R E CT IF IER
IN T HE AS S E MB LY LINE "C" LOGO
DAT E CODE
YE AR 0 = 2000
Note: "P" in as s embly line pos ition AS S E MB LY
indicates "Lead - F ree" LOT CODE WE E K 19
LINE C

Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
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contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
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