IRF9540NL

l Advanced Process Technology

l Surface Mount (IRF9540S) TO-262
l Low-profile through-hole (IRF9540L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated

Description
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest D
power capability and the lowest possible on-resistance in VDSS = -100V
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
RDS(on) = 0.117Ω
typical surface mount application. G
The through-hole version (IRF9540L) is available for low- ID = -23A
profile applications.
S

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V… -23
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V… -16 A
IDM Pulsed Drain Current … -76
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚… 430 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt ƒ… -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.1
°C/W
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

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 IRF9540NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA…
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.117 Ω VGS = -10V, ID = -11A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 5.3 ––– ––– S VDS = -50V, ID = -11A…
––– ––– -25 VDS = -100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 97 ID = -11A
Q gs Gate-to-Source Charge ––– ––– 15 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 51 VGS = -10V, See Fig. 6 and 13 „…
td(on) Turn-On Delay Time ––– 15 ––– VDD = -50V
tr Rise Time ––– 67 ––– ID = -11A
ns
td(off) Turn-Off Delay Time ––– 51 ––– RG = 5.1Ω
tf Fall Time ––– 51 ––– RD = 4.2Ω, See Fig. 10 „
Between lead,
LS Internal Source Inductance ––– 7.5 ––– nH
and center of die contact
Ciss Input Capacitance ––– 1300 ––– VGS = 0V
Coss Output Capacitance ––– 400 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -23

(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G
––– ––– -76
(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -11A, VGS = 0V „

t rr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = -11A
Q rr Reverse Recovery Charge ––– 830 1200 nC di/dt = -100A/µs „…
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 7.1mH … Uses IRF9540N data and test conditions
RG = 25Ω, I AS = -11A. (See Figure 12)
ƒ ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C

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 IRF9540NL

100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V
-ID , D rain-to-S ource C urrent (A )

- 7.0V

-ID , Drain-to-Source Current (A )

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V

10 10

-4 .5V

-4.5 V 20 µ s P U L S E W ID TH 2 0µ s P U LS E W ID TH
T c = 25 °C A T C = 1 75 °C
1 1 A
0.1 1 10 100 0.1 1 10 100
-VD S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
I D = -19 A
R D S (on ) , D rain-to-S ource O n R esistance
-I D , D rain-to -So urc e C urre nt (A )

TJ = 25 °C
2.0

TJ = 1 7 5°C
10
(N orm alized)

1.5

1.0
1

0.5

V DS = -2 5 V
2 0µ s P U L S E W ID TH VG S = -1 0V
0.1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

-VG S , Ga te -to-Source Volta ge (V) T J , Junction T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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 IRF9540NL

20
3000 I D = -1 1A
V GS = 0V , f = 1M H z
C is s = C g s + C g d , Cd s S H O R T E D V D S = -80 V

-V G S , G ate-to-S ource V oltage (V )

C rs s = C gd V D S = -50 V
2500 16
C o ss = C d s + C gd V D S = -20 V
C , Capacitanc e (pF )

2000 C iss 12

1500

8
C oss
1000
C rss
4
500
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0 A
0 A 0 20 40 60 80 100
1 10 100
-VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
-I S D , Reverse D rain Current (A )

B Y R D S (o n)
-I D , D rain C urrent (A )

10 100
T J = 17 5°C

T J = 2 5°C
10 0µs

1 10

1m s

T C = 25 °C
T J = 17 5°C 10m s
V G S = 0V S ing le P u lse
0.1 A 1 A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
-VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRF9540NL

25
RD
VDS

20 VGS
D.U.T.
I D , Drain Current (A)

RG -
+ V DD
15

-10V
Pulse Width ≤ 1 µs
10 Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

5

td(on) tr t d(off) tf
VGS
0
25 50 75 100 125 150 175 10%
TC , Case Temperature ( ° C)

Fig 9. Maximum Drain Current Vs. 90%

Case Temperature VDS

Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10 P DM
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRF9540NL
1200
ID

E A S , S ingle P ulse A valanche E nergy (m J)

VDS L
TO P -4 .7A
-8 .1A
1000
B O TTO M -11 A
RG D .U .T
VD D
IA S A
800
-2 0 V D R IV E R
tp 0 .0 1Ω

600

400
15V

200
Fig 12a. Unclamped Inductive Test Circuit

0 A
25 50 75 100 125 150 175
IAS S tarting T J , J unc tion T em perature (°C )

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRF9540NL
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

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 IRF9540NL
D2Pak Package Outline

1 0.54 (.4 15) -B - 1 0.16 (.4 00 )

1 0.29 (.4 05) 4.69 (.1 85) RE F.
1.4 0 (.055 ) 4.20 (.1 65)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 15 .4 9 (.6 10) 2.7 9 (.110 )

1.2 7 (.05 0) 1 3 14 .7 3 (.5 80) 2.2 9 (.090 )

5 .28 (.20 8) 2.61 (.1 03 )

4 .78 (.18 8) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 - D R AIN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)

2.5 4 (.100 )
2 .08 (.08 2) 2X
2X

Part Marking Information

D2Pak

A
PART NUM BER
LO G O
F530S
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK

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 IRF9540NL
Package Outline
TO-262 Outline

Part Marking Information

TO-262

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 IRF9540NL
Tape & Reel Information
D2Pak

TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .60 (.06 3)
4 .1 0 (.1 6 1 ) 1 .50 (.05 9)
3 .9 0 (.1 5 3 ) 0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 1 .6 0 (.4 5 7 )

1 .6 5 (.0 6 5 ) 1 1 .4 0 (.4 4 9 ) 2 4 .3 0 (.9 5 7 )
1 5 .4 2 (.6 0 9 )
2 3 .9 0 (.9 4 1 )
1 5 .2 2 (.6 0 1 )
TR L
1 .75 (.06 9 )
10 .9 0 (.42 9) 1 .25 (.04 9 )
10 .7 0 (.42 1) 4 .7 2 (.1 3 6)
16 .10 (.63 4 ) 4 .5 2 (.1 7 8)
15 .90 (.62 6 )

F E E D D IRE C TIO N

13.50 (.532 ) 2 7.4 0 (1.079)

12.80 (.504 ) 2 3.9 0 (.9 41)

33 0.00 60.00 (2.3 62)

(1 4.1 73) MIN .
MA X.

3 0.40 (1.1 97)

NO TES : MAX.
1. C O M F O R M S TO E IA -4 18. 26 .40 (1.03 9) 4
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 24 .40 (.961 )
3. D IM E N S IO N ME A S U R E D @ H U B .
3
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

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