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Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current D 2 Pak T O -26 2
l Effective Coss specified ( See AN 1001)
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 630 mJ
IAR Avalanche Current ––– 10 A
EAR Repetitive Avalanche Energy ––– 12.5 mJ
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.0 °C/W
RθJA Junction-to-Ambient ( PCB Mounted, steady-state)* ––– 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 10
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– 40
(Body Diode) p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 10A, VGS = 0V
trr Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 10A
Qrr Reverse RecoveryCharge ––– 1.9 2.9 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF740AS/L
1
4.5V
0.1
4.5V
100 3.0
ID = 10A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
10 2.0
TJ = 150 ° C
(Normalized)
1.5
1 1.0
TJ = 25 ° C
0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
20
100000
ID = 10A
VGS = 0V, f = 1 MHZ VDS = 320V
Ciss = Cgs + Cgd , Cds SHORTED
1000 Ciss 12
Coss
100
8
10
Crss 4
100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
10us
I D , Drain Current (A)
10
TJ = 150 ° C 100us
10
TJ = 25 ° C
1
1ms
TC = 25 ° C
TJ = 150 ° C
V GS = 0 V Single Pulse 10ms
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
10.0 RD
VDS
VGS
8.0
D.U.T.
RG
+
I D , Drain Current (A)
-VDD
6.0 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0 VDS
90%
0.0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02 P DM
0.01
SINGLE PULSE t1
0.01 (THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
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IRF740AS/L
1400
1 5V ID
RG D .U .T +
V 800
- DD
IA S A
20V
tp 0 .0 1 Ω 600
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG
10 V
QGS QGD 580
V DSav , Avalanche Voltage ( V )
VG 560
540
Charge
Fig 13a. Basic Gate Charge Waveform
520
Current Regulator
Same Type as D.U.T.
50KΩ 500
12V .2µF
.3µF
+ 480
V
D.U.T. - DS 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS
IAV , Avalanche Current ( A)
3mA
IG ID
Current Sampling Resistors Fig 12d. Typical Drain-to-Source Voltage
Fig 13b. Gate Charge Test Circuit Vs. Avalanche Current
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IRF740AS/L
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
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IRF740AS/L
D2Pak Package Outline
8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 55 ) R E F.
3X
1.14 (.0 45) 0.9 3 (.0 37 ) 0.55 (.0 22) 1.1 4 (.0 45 )
3X 0.46 (.0 18)
0.6 9 (.0 27 )
5 .08 (.20 0) 0.25 (.0 10 ) M B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
2.5 4 (.100 )
2.0 8 (.08 2) 2X
2X
A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK
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IRF740AS/L
Package Outline
TO-262 Outline
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IRF740AS/L
Tape & Reel Information
D2Pak TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3 )
4 .1 0 ( .1 6 1 ) 1 .5 0 (.0 5 9 )
3 .9 0 ( .1 5 3 ) 0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )
F E E D D IR E C T IO N
30.4 0 (1.19 7)
N O TE S : M A X.
1 . CO M F OR M S TO E IA -418 . 26 .40 (1 .03 9) 4
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 24 .40 (.9 61 )
3 . DIM E NS IO N M EA S UR E D @ H U B.
3
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 12.6mH
Coss eff. is a fixed capacitance that gives the same charging time
RG = 25Ω, IAS = 10A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 10A, di/dt ≤ 330A/µs, VDD ≤ V(BR)DSS, Uses IRF740A data and test conditions
TJ ≤ 150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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http://www.irf.com/ Data and specifications subject to change without notice. 9/99
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