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PD - 93894A
IRFB23N15D
SMPS MOSFET IRFS23N15D
IRFSL23N15D
HEXFET® Power MOSFET
Applications VDSS RDS(on) max ID
l High frequency DC-DC converters
150V 0.090Ω 23A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262
IRFB23N15D IRFS23N15D IRFSL23N15D
and Current
IRFB/IRFS/IRFSL23N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.090 Ω VGS = 10V, ID = 14A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25 VDS = 150V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V
––– ––– 92
(Body Diode) p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V
trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = 14A
Qrr Reverse RecoveryCharge ––– 0.8 1.2 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFB/IRFS/IRFSL23N15D
1 10
5.0V
0.1
5.0V
100 3.5
ID = 23A
R DS(on) , Drain-to-Source On Resistance
3.0
I D , Drain-to-Source Current (A)
TJ = 175 ° C
2.5
10
(Normalized)
2.0
1.5
TJ = 25 ° C
1
1.0
0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4 5 6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
IRFB/IRFS/IRFSL23N15D
10000 20
VGS = 0V, f = 1 MHZ ID = 14A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 120V
1000
12
Coss
8
100
Crss
4
100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
10 100
TJ = 175 ° C 10us
TJ = 25 ° C 100us
1 10
1ms
TC = 25 ° C
TJ = 175 ° C
10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
IRFB/IRFS/IRFSL23N15D
25 RD
VDS
VGS
20 D.U.T.
RG
+
I D , Drain Current (A)
-VDD
15 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10 P DM
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
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IRFB/IRFS/IRFSL23N15D
600
1 5V ID
400
RG D .U .T +
V
- DD
IA S A
300
20V
tp 0 .0 1 Ω
200
Fig 12a. Unclamped Inductive Test Circuit
100
V (B R )D SS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Current Regulator
Same Type as D.U.T.
QG
50KΩ
.2µF
10 V 12V
.3µF
QGS QGD +
V
D.U.T. - DS
VG VGS
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRFB/IRFS/IRFSL23N15D
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
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IRFB/IRFS/IRFSL23N15D
1 0 .5 4 (.4 1 5 ) 3 .7 8 (.1 4 9 ) -B -
2 .8 7 (.1 1 3 ) 1 0 .2 9 (.4 0 5 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 )
2 .6 2 (.1 0 3 ) 4 .2 0 (.1 6 5 )
-A - 1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )
6.4 7 (.2 5 5 )
6.1 0 (.2 4 0 )
4
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S OU RC E
4 - D R A IN
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )
0 .9 3 (.0 3 7 ) 0 .5 5 (.0 2 2 )
3X 3X
0 .6 9 (.0 2 7 ) 0 .4 6 (.0 1 8 )
1 .4 0 (.0 5 5 )
3X
1 .1 5 (.0 4 5 ) 0 .3 6 (.0 1 4 ) M B A M
2 .9 2 (.1 1 5 )
2 .6 4 (.1 0 4 )
2 .5 4 (.1 0 0)
2X
N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
2 C O N T R O L L IN G D IM E N S IO N : IN C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y A
LOT C ODE 9B1M IN T E R N A T IO N A L PART NU M BER
R E C T IF IE R
IR F 1 0 1 0
LOGO 9246
9B 1M D ATE CO DE
ASSEMBLY
(Y Y W W )
LOT CODE
YY = YEAR
W W = W EEK
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IRFB/IRFS/IRFSL23N15D
8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 - D R AIN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)
2.5 4 (.100 )
2 .08 (.08 2) 2X
2X
A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK
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IRFB/IRFS/IRFSL23N15D
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IRFB/IRFS/IRFSL23N15D
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3 )
4 .1 0 ( .1 6 1 ) 1 .5 0 (.0 5 9 )
3 .9 0 ( .1 5 3 ) 0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )
F E E D D IR E C T IO N
30.4 0 (1.19 7)
N O TE S : M A X.
1 . CO M F OR M S TO E IA -418 . 26 .40 (1 .03 9) 4
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 24 .40 (.9 61 )
3 . DIM E NS IO N M EA S UR E D @ H U B.
3
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 2.7mH
RG = 25Ω, IAS = 14A. as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 14A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, This is only applied to TO-220AB package
TJ ≤ 175°C
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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