PD - 97001C

IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
Applications HEXFET® Power MOSFET
l High frequency DC-DC converters Key Parameters
l Plasma Display Panel VDS 200 V
VDS (Avalanche) min. 260 V
Benefits RDS(ON) max @ 10V 54 m:
l Low Gate-to-Drain Charge to TJ max 175 °C
Reduce Switching Losses
l Fully Characterized Capacitance
Including Effective COSS to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free TO-220AB D2Pak TO-262
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ‡ 43*
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ‡ 30* A
IDM Pulsed Drain Current  180
PD @TA = 25°C Power Dissipation ‡ 3.8 W
PD @TC = 25°C Power Dissipation ‡ 300*
Linear Derating Factor ‡ 2.0* W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 9.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw† 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.47*
RθCS Case-to-Sink, Flat, Greased Surface † 0.50 ––– °C/W
RθJA Junction-to-Ambient† ––– 62
RθJA Junction-to-Ambient‡ ––– 40

* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes  through ‡ are on page 11

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Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.22 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.054 Ω VGS = 10V, ID = 26A „
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 26A
Qg Total Gate Charge ––– 60 91 ID = 26A
Qgs Gate-to-Source Charge ––– 17 25 nC VDS = 100V
Qgd Gate-to-Drain ("Miller") Charge ––– 28 42 VGS = 10V, „
td(on) Turn-On Delay Time ––– 16 ––– VDD = 100V
tr Rise Time ––– 95 ––– ns ID = 26A
td(off) Turn-Off Delay Time ––– 29 ––– R G = 2.5Ω
tf Fall Time ––– 47 ––– VGS = 10V „
Ciss Input Capacitance ––– 2900 ––– VGS = 0V
Coss Output Capacitance ––– 450 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 73 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 3550 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 180 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 380 ––– VGS = 0V, VDS = 0V to 160V …

Avalanche Characteristics
Parameter Min. Typ. Max. Units
EAS Single Pulse Avalanche Energy dh ––– ––– 460 mJ
IAR Avalanche Current c ––– ––– 26 A
EAR Repetitive Avalanche Energy c ––– 390 ––– mJ
VDS (Avalanche) Repetitive Avalanche Voltage c 260 ––– ––– V

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 44
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 180

(Body Diode) † p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 26A, VGS = 0V „
trr Reverse Recovery Time ––– 160 240 nS TJ = 25°C, IF = 26A
Qrr Reverse RecoveryCharge ––– 1.3 2.0 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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1000 100
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
100 7.0V 7.0V
6.0V 6.0V
5.5V 10 5.5V
BOTTOM 5.0V BOTTOM 5.0V
5.0V

10

1
1 5.0V

300µs PULSE WIDTH 300µs PULSE WIDTH

Tj = 25°C Tj = 175°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00 3.5
I D = 44A

3.0
ID, Drain-to-Source Current (Α )

T J = 25°C
RDS(on) , Drain-to-Source On Resistance

2.5
100.00
T J = 175°C
(Normalized)

2.0

1.5

10.00
1.0

VDS = 15V 0.5

300µs PULSE WIDTH V GS = 10V

1.00 0.0
5.0 7.0 9.0 11.0 13.0 15.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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 IRFB/S/SL38N20DPbF

100000 12
VGS = 0V, f = 1 MHZ ID = 26A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 160V

VGS, Gate-to-Source Voltage (V)

Crss = Cgd 10
VDS = 100V
10000 Coss = Cds + Cgd
8
C, Capacitance(pF)

Ciss
6
1000

Coss 4

100
2
Crss

0
10 0 10 20 30 40 50 60 70
1 10 100 1000
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.00 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100.00 T J = 175°C 100

100µsec
10.00 10
1msec
T J = 25°C

1.00 1
10msec
Tc = 25°C
VGS = 0V Tj = 175°C
Single Pulse
0.10 0.1
0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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45 RD
V DS
40
VGS
D.U.T.
35 RG
+
-VDD
ID, Drain Current (A)

30
10V
25
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20

15 Fig 10a. Switching Time Test Circuit

10
VDS
5 90%

0
25 50 75 100 125 150 175
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
(Z thJC )

D = 0.50

0.20
0.1

0.10

0.05
Thermal Response

0.02 SINGLE PULSE

0.01 (THERMAL RESPONSE)
P DM

0.01
t1

t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC +TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB/S/SL38N20DPbF

15V 900
ID
TOP 11A
19A
L DRIVER 720 BOTTOM 26A
VDS

EAS , Single Pulse Avalanche Energy (mJ)

RG D.U.T + 540
V
- DD
IAS A
20V
tp 0.01Ω
360

Fig 12a. Unclamped Inductive Test Circuit

180

V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting Tj, Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

I AS Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50KΩ

10 V 12V .2µF
.3µF
QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRFB/S/SL38N20DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

E XAMPLE : T HIS IS AN IRF 1010
LOT CODE 1789 INT E R NAT IONAL PAR T NUMB E R
AS S E MB LE D ON WW 19, 1997 R E CT IF IE R
IN T HE AS S E MB LY LINE "C" LOGO
DAT E CODE
Note: "P" inas s embly line pos ition YE AR 7 = 1997
AS S E MB LY
indicates "Lead - F ree" LOT CODE WE E K 19
LINE C

TO-220AB packages are not recommended for Surface Mount Application.

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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D2Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

T HIS IS AN IRF530S WITH PART NUMBER
LOT CODE 8024 INTERNAT IONAL
AS S EMBLED ON WW 02, 2000 RECTIFIER F 530S
IN THE AS S EMBLY LINE "L" LOGO
DATE CODE
YEAR 0 = 2000
AS S EMBLY
LOT CODE WEE K 02
LINE L

OR
PART NUMBER
INTE RNAT IONAL
RECTIFIER F530S
LOGO DATE CODE
P = DES IGNAT ES LEAD - F REE
PRODUCT (OPTIONAL)
AS S EMBLY
YEAR 0 = 2000
LOT CODE
WEEK 02
A = AS S EMBLY S ITE CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFB/S/SL38N20DPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

E XAMPLE : THIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNAT IONAL
AS SEMBLED ON WW 19, 1997
RECTIFIER
IN T HE ASS EMBLY LINE "C" LOGO
DAT E CODE
YEAR 7 = 1997
AS SEMBLY
LOT CODE WE EK 19
LINE C

OR

PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
DATE CODE
P = DE SIGNAT ES LEAD-F REE
ASSE MBLY
LOT CODE PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = ASSE MBLY SITE CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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D2Pak Tape & Reel Information

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
 Repetitive rating; pulse width limited by … Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS .
‚ Starting TJ = 25°C, L = 1.3mH † This is only applied to TO-220AB package.
RG = 25Ω, IAS = 26A. ‡ This is applied to D2Pak, when mounted on 1" square PCB
ƒ ISD ≤ 26A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS, (FR-4 or G-10 Material ). For recommended footprint and soldering
TJ ≤ 175°C. techniques refer to application note #AN-994.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
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