PD - 9.

1507A

PRELIMINARY IRFR/U9120N
HEXFET® Power MOSFET
l Ultra Low On-Resistance
D
l P-Channel VDSS = -100V
l Surface Mount (IRFR9120N)
l Straight Lead (IRFU9120N)
RDS(on) = 0.48Ω
l Advanced Process Technology G
l Fast Switching
l Fully Avalanche Rated ID = -6.6A
S

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
D -P ak I-P ak
The D-Pak is designed for surface mounting using vapor T O -2 52 A A T O -25 1 A A
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.6
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.2 A
IDM Pulsed Drain Current  -26
PD @TC = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 100 mJ
IAR Avalanche Current -6.6 A
EAR Repetitive Avalanche Energy 4.0 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.1
RθJA Junction-to-Ambient (PCB mount)** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110

3/16/98
IRFR/U9120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.48 Ω VGS = -10V, ID = -3.9A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 1.4 ––– ––– S VDS = -50V, ID = -4.0A†
––– ––– -25 VDS = -100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 27 ID = -4.0A
Qgs Gate-to-Source Charge ––– ––– 5.0 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = -10V, See Fig. 6 and 13 „†
td(on) Turn-On Delay Time ––– 14 ––– VDD = -50V
tr Rise Time ––– 47 ––– ID = -4.0A
ns
td(off) Turn-Off Delay Time ––– 28 ––– RG = 12 Ω
tf Fall Time ––– 31 ––– RD =12 Ω, See Fig. 10 „†
D
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact… S

Ciss Input Capacitance ––– 350 ––– VGS = 0V

Coss Output Capacitance ––– 110 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5†

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -6.6

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -26
(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -3.9A, VGS = 0V „

t rr Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = -4.0A
Qrr Reverse Recovery Charge ––– 420 630 nC di/dt = 100A/µs „†
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 ) …This is applied for I-PAK, LS of D-PAK is measured between
‚ Starting TJ = 25°C, L = 13mH lead and center of die contact
RG = 25Ω, IAS = -3.9A. (See Figure 12)
ƒ ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, † Uses IRF9520N data and test conditions.
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
 IRFR/U9120N

100 100
VGS
VGS TOP -15V
TOP -15V
-10V
-10V

-I D , Drain-to-Source Current (A)

-8.0V
-8.0V
-I D , Drain-to-Source Current (A)

-7.0V
-7.0V
-6.0V
-6.0V
-5.5V
-5.5V
-5.0V -5.0V
BOTTOM -4.5V BOTTOM -4.5V
10 10

1 1

-4.5V
-4.5V
20µs PULSE WIDTH 20µs PULSE WIDTH
TJ = 25 °C TJ = 150 °C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
ID = -6.7A
R DS(on) , Drain-to-Source On Resistance
-I D , Drain-to-Source Current (A)

2.0

10 TJ = 25 ° C
(Normalized)

1.5
TJ = 150 ° C

1.0
1

0.5

V DS = -50V
20µs PULSE WIDTH VGS = -10V
0.1 0.0
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRFR/U9120N
800 20
VGS = 0V, f = 1MHz ID = -4.0 A
VDS =-80V
Ciss = Cgs + Cgd , Cds SHORTED VDS =-50V

-VGS , Gate-to-Source Voltage (V)

Crss = Cgd VDS =-20V
Coss = Cds + Cgd 16
600
C, Capacitance (pF)

Ciss
12

400 Coss
8

Crss
200
4

FOR TEST CIRCUIT

SEE FIGURE 13
0 0
1 10 100 0 5 10 15 20 25

-VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

10us
-II D , Drain Current (A)

TJ = 150 ° C
10 10
TJ = 25 ° C 100us

1ms

1 1
10ms

TC = 25 ° C
TJ = 150 ° C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.8 1.4 2.0 2.6 1 10 100 1000
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRFR/U9120N
8.0 RD
VDS

VGS
D.U.T.
6.0 RG -
-ID , Drain Current (A)

+ VDD

-10V
Pulse Width ≤ 1 µs
4.0 Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

2.0
td(on) tr t d(off) tf
VGS
10%
0.0
25 50 75 100 125 150
TC , Case Temperature ( ° C)
90%
VDS

Fig 9. Maximum Drain Current Vs.

Case Temperature Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

D = 0.50

1
0.20

0.10
0.05

0.02 PDM
SINGLE PULSE
0.1 0.01 (THERMAL RESPONSE)
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFR/U9120N
VDS L
250

EAS , Single Pulse Avalanche Energy (mJ)

ID
RG D .U .T - VV TOP -1.7A
+ DD
DD -2.5A
IA S A 200 BOTTOM -3.9A
-20V D R IV E R
tp 0.0 1Ω

150

15V
100

Fig 12a. Unclamped Inductive Test Circuit

50
IAS

0
25 50 75 100 125 150
Starting TJ , Junction Temperature( ° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRFR/U9120N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRFR/U9120N
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)

2.38 (.094)
6.73 (.265) 2.19 (.086)
6.35 (.250) 1.14 (.045)
0.89 (.035)
-A-
5.46 (.215) 1.27 (.050) 0.58 (.023)
5.21 (.205) 0.88 (.035) 0.46 (.018)

6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235) 10.42 (.410)
1.02 (.040) 9.40 (.370) LE A D A S S IG N M E N T S
1.64 (.025) 1 2 3
1 - GATE
0.51 (.020) 2 - D R A IN
-B- M IN . 3 - SOURCE
1.52 (.060) 4 - D R A IN
1.15 (.045)
0.89 (.035)
3X
0.64 (.025) 0.58 (.023)
1.14 (.045) 0.46 (.018)
2X 0.25 (.010) M A M B
0.76 (.030)

2.28 (.090) N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
4.57 (.180) 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).

Part Marking Information

TO-252AA (D-Pak)

E XA M P L E : T H IS IS A N IR F R 1 2 0
W IT H A S S E M B L Y A
LOT CODE 9U1P IN T E R N A T IO N A L
F IR S T P O R T IO N
R E C T IF IE R
IR F R OF PART NUMBER
LO G O
120
9U 1P
ASSEMBLY S E C O N D P O R T IO N
LOT CODE OF PART NUMBER
 IRFR/U9120N

Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)

6.73 (.265) 2.38 (.094)

6.35 (.250) 2.19 (.086)
-A-
1.27 (.050) 0.58 (.023)
5.46 (.215)
0.88 (.035) 0.46 (.018)
5.21 (.205)
LE A D A S S IG N M E N T S
4 1 - GATE
6.45 (.245) 2 - D R A IN
5.68 (.224) 3 - SOURCE
1.52 (.060) 6.22 (.245) 4 - D R A IN
1.15 (.045) 5.97 (.235)

1 2 3

-B- N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
2.28 (.090) 9.65 (.380) 2 C O N T R O LLIN G D IM E N S IO N : IN C H .
1.91 (.075) 8.89 (.350) 3 C O N F O R M S TO J E D E C O U T LIN E T O -252A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).

1.14 (.045) 1.14 (.045)

3X 0.89 (.035)
0.76 (.030) 3X 0.89 (.035)
0.64 (.025)

2.28 (.090) 0.25 (.010) M A M B 0.58 (.023)

0.46 (.018)
2X

Part Marking Information

TO-251AA (I-Pak)

E X A M P L E : T H IS IS A N IR F U 1 2 0
W IT H A S S E M B L Y
LO T CODE 9U1P IN T E R N A T IO N A L
F IR S T P O R T IO N
R E C T IF IE R
IR F U OF PART NUMBER
LO GO
120
9U 1P
ASSEMBLY S E C O N D P O R T IO N
LOT CODE OF PART NUMBER
IRFR/U9120N

Tape & Reel Information

TO-252AA

TR TRR TRL

1 6.3 ( .6 41 ) 16 .3 ( .64 1 )
1 5.7 ( .6 19 ) 15 .7 ( .61 9 )

12 .1 ( .4 7 6 ) 8 .1 ( .3 18 )
F E E D D IR E C T IO N F E E D D IR E C T IO N
11 .9 ( .4 6 9 ) 7 .9 ( .3 12 )

NOTES :
1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .
2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.

1 3 IN C H

16 m m
NO TES :
1. O U T L IN E C O N F O R M S T O E IA -4 81 .

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http://www.irf.com/ Data and specifications subject to change without notice. 3/98
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