PD - 94153

IRFZ44NS
l Advanced Process Technology IRFZ44NL
l Surface Mount (IRFZ44NS) HEXFET® Power MOSFET
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature D
VDSS = 55V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 0.0175Ω
Description G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve ID = 49A
extremely low on-resistance per silicon area. This benefit, S
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal D 2 P ak T O -26 2
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current  160
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.5
RθJA Junction-to-Ambient ––– 40 °C/W

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = V GS, ID = 250µA
gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 25A„
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 63 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
tr Rise Time ––– 60 ––– ID = 25A
ns
td(off) Turn-Off Delay Time ––– 44 ––– RG = 12Ω
tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10 „
LS Internal Source Inductance ––– 7.5 ––– nH Between lead,
and center of die contact
Ciss Input Capacitance ––– 1470 ––– VGS = 0V
Coss Output Capacitance ––– 360 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy‚ ––– 530… 150† mJ IAS = 25A, L = 0.47mH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 49
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G

––– ––– 160

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „
trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A
Q rr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. (See fig. 11) TJ ≤ 175°C
‚ Starting TJ = 25°C, L = 0.48mH „ Pulse width ≤ 400µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 25A. (See Figure 12) … This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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1000 VGS 1000 VGS

TO P 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D rain-to-S ou rc e C urre nt (A )

I , Drain-to-S ource C urrent (A )

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BO TTOM 4.5V BOTTOM 4.5V
100 100

4.5V
10
4 .5 V
10
D

D
2 0µ s P U L S E W ID T H 20 µ s P U LS E W ID TH
TTJC==25°C
25 °C TTCJ == 175°C
1 75 °C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
ID = 41A
R D S(o n) , D ra in-to-S o urc e O n R e s is tan c e
I D , D ra in -to -S ourc e C urre nt (A )

2.0

TJ = 2 5 °C
100
(N orm aliz ed )

TJ = 1 7 5 °C 1.5

1.0

10

0.5

V DS = 25V
2 0 µ s P U LS E W ID TH V G S = 10 V
1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
4 5 6 7 8 9 10

V G S , G a te-to-S ource Vo ltag e (V) T J , J unc tion T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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2500 20
V GS = 0V , f = 1M H z I D = 25 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = 44 V

V G S , G ate-to-S ource V oltage (V )

C rs s = C gd V D S = 28 V
2000 C o ss = C d s + C gd 16
C iss
C , Capacitance (pF)

1500 12
C oss

1000 8

C rss
500 4

FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 10 20 30 40 50 60 70
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I S D , R everse Drain C urrent (A )

I D , Drain C urrent (A )

100 100 10µ s

T J = 1 75 °C
100µ s

TJ = 25 °C
10 10
1m s

T C = 25 °C 10m s
T J = 17 5°C
V G S = 0V S ing le P u lse
1 A 1 A
0.5 1.0 1.5 2.0 2.5 3.0 1 10 100

V S D , S ource-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRFZ44NS/IRFZ44NL
RD
V DS

50 VGS
D.U.T.
RG
+
-V DD
40
10V
I D , Drain Current (A)

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30

Fig 10a. Switching Time Test Circuit

20
VDS
90%
10

0
25 50 75 100 125 150 175 10%
TC , Case Temperature ( °C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response (Z thJC )

1
D = 0.50


0.20

0.10
PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFZ44NS/IRFZ44NL

500
ID

E A S , S ingle P ulse A valanche E nergy (m J)

L TO P 1 0A
VDS 18 A
400 B O TTO M 25A
D.U.T.

RG +
V
- DD 300

10 V IAS
tp
0.01Ω
200

Fig 12a. Unclamped Inductive Test Circuit

100
V(BR)DSS
tp V D D = 25 V
0 A
VDD 25 50 75 100 125 150 175
S tarting T J , J unc tion T em perature (°C )

VDS

Fig 12c. Maximum Avalanche Energy

IAS
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.

50KΩ
.2µF
QG 12V
.3µF

10 V +
V
QGS QGD D.U.T. - DS

VGS
VG
3mA

IG ID
Charge
Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFZ44NS/IRFZ44NL
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. V DD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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IRFZ44NS/IRFZ44NL
D2Pak Package Outline

1 0.54 (.4 15) -B - 1 0.16 (.4 00 )

1 0.29 (.4 05) 4.69 (.1 85) RE F.
1.4 0 (.055 ) 4.20 (.1 65)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 15 .4 9 (.6 10) 2.7 9 (.110 )

1.2 7 (.05 0) 1 3 14 .7 3 (.5 80) 2.2 9 (.090 )

5 .28 (.20 8) 2.61 (.1 03 )

4 .78 (.18 8) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 2 - D R AIN 17 .78 (.70 0)
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)

2.5 4 (.100 )
2 .08 (.08 2) 2X
2X

Part Marking Information

D2Pak

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK

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 IRFZ44NS/IRFZ44NL
Package Outline
TO-262 Outline

Part Marking Information

TO-262

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IRFZ44NS/IRFZ44NL
Tape & Reel Information
D2Pak

TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .60 (.06 3)
4 .1 0 (.1 6 1 ) 1 .50 (.05 9)
3 .9 0 (.1 5 3 ) 0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 1 .6 0 (.4 5 7 )

1 .6 5 (.0 6 5 ) 1 1 .4 0 (.4 4 9 ) 2 4 .3 0 (.9 5 7 )
1 5 .4 2 (.6 0 9 )
2 3 .9 0 (.9 4 1 )
1 5 .2 2 (.6 0 1 )
TR L
1 .75 (.06 9 )
10 .9 0 (.42 9) 1 .25 (.04 9 )
10 .7 0 (.42 1) 4 .7 2 (.1 3 6)
16 .10 (.63 4 ) 4 .5 2 (.1 7 8)
15 .90 (.62 6 )

F E E D D IRE C TIO N

13.50 (.532 ) 2 7.4 0 (1.079)

12.80 (.504 ) 2 3.9 0 (.9 41)

33 0.00 60.00 (2.3 62)

(1 4.1 73) MIN .
MA X.

3 0.40 (1.1 97)

NO TES : MAX.
1. C O M F O R M S TO E IA -4 18. 26 .40 (1.03 9) 4
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 24 .40 (.961 )
3. D IM E N S IO N ME A S U R E D @ H U B .
3
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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