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IRFR/U3910
HEXFET® Power MOSFET
l Ultra Low On-Resistance
D
l Surface Mount (IRFR3910)
VDSS = 100V
l Straight Lead (IRFU3910)
l Advanced Process Technology
RDS(on) = 0.115Ω
l Fast Switching G
l Fully Avalanche Rated
ID = 16A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.9
RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
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5/11/98
IRFR/U3910
––– ––– 16
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– 60
(Body Diode) p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V
trr Reverse Recovery Time ––– 130 190 ns TJ = 25°C, I F = 9.0A
Qrr Reverse RecoveryCharge ––– 650 970 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 3.1mH
This is applied for I-PAK, Ls of D-PAK is measured between lead and
RG = 25Ω, IAS = 9.0A. (See Figure 12) center of die contact
ISD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS, Uses IRF530N data and test conditions
TJ ≤ 175°C
2 www.irf.com
IRFR/U3910
100 100
VG S VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D rain-to-S ourc e C urrent (A )
10 10
4 .5V
4.5V
D
D
20µs P U LS E W ID TH 20 µs P U LS E W ID TH
T J = 25°C T J = 1 75°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
VD S , Drain-to-S ource Voltage (V) V D S , Drain-to-Source Voltage (V)
100 3.0
I D = 1 5A
R D S (on) , Drain-to-S ource O n Resistance
I D , D ra in -to-S ourc e C urrent (A)
2.5
T J = 2 5 °C
T J = 1 75 °C 2.0
(N orm alized)
10 1.5
1.0
0.5
V DS = 5 0V
2 0µ s P U L S E W ID TH V G S = 10 V
1 0.0 A
and A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
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IRFR/U3910
1200 20
V GS = 0V , f = 1M H z I D = 9 .0A
C is s = C g s + C gd , C ds S H O R T E D
V D S = 80 V
C rss = C gd
800
12
600
C oss
8
400
C rs s
200 4
FO R TE S T C IR C U IT
0 A S E E F IG U R E 1 3
0 A
1 10 100
0 5 10 15 20 25 30 35 40 45
V D S , Drain-to-S ourc e Voltage (V)
Q G , T otal G ate C harge (nC )
100
1000
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I S D , Reverse D rain C urrent (A)
I D , Drain C urrent (A )
100
T J = 1 75 °C
10 10µ s
T J = 2 5°C
10 100µ s
1m s
T C = 25 °C
T J = 17 5°C
VG S = 0 V S ing le P u lse 10m s
1 A 1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
A
1 10 100 1000
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )
20 RD
VDS
VGS
D.U.T.
15 RG
I D , Drain Current (A)
+
-VDD
5.0V
10 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50
0.20
0.10
0.05 P DM
0.1 0.02 SINGLE PULSE t1
0.01 (THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
www.irf.com 5
IRFR/U3910
350
ID
250
L D R IV E R
VD S
200
RG D .U .T +
V 150
- DD
IA S A
10V
tp 0.0 1 Ω 100
V D D = 25 V
0 A
25 50 75 100 125 150 175
V (B R )D SS S tarting T J , J unc tion T em perature (°C )
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
50KΩ
12V .2µF
QG .3µF
5.0 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRFR/U3910
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
www.irf.com 7
IRFR/U3910
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.0 9 4 )
6 .7 3 (.2 6 5 ) 2 .1 9 (.0 8 6 )
6 .3 5 (.2 5 0 ) 1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
-A -
5 .4 6 (.2 1 5 ) 1 .2 7 (.0 5 0 ) 0 .5 8 (.0 2 3 )
5 .2 1 (.2 0 5 ) 0 .8 8 (.0 3 5 ) 0 .4 6 (.0 1 8 )
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 ) 1 0 .4 2 (.4 1 0 )
1 .0 2 (.0 4 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S
1 .6 4 (.0 2 5 ) 1 2 3
1 - GATE
0 .5 1 (.0 2 0 ) 2 - D R A IN
-B - M IN . 3 - SOURCE
1 .5 2 (.0 6 0 ) 4 - D R A IN
1 .1 5 (.0 4 5 )
0 .8 9 (.0 3 5 )
3X
0 .6 4 (.0 2 5 ) 0 .5 8 (.0 2 3 )
1 .1 4 (.0 4 5 ) 0 .4 6 (.0 1 8 )
2 X 0 .7 6 (.0 3 0 ) 0 .2 5 (.0 1 0 ) M A M B
2 .2 8 (.0 9 0 ) N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
4 .5 7 (.1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ).
E XA M P L E : T H IS IS A N IR F R 1 2 0
W IT H A S S E M B L Y A
LOT COD E 9U1P IN T E R N A T IO N A L
F IR S T P O R T IO N
R E C T IF IE R
IR F R OF PART NUMBER
LO GO
120
9U 1P
ASS EMB LY S E C O N D P O R TIO N
LOT CODE OF PART NUMBER
8 www.irf.com
IRFR/U3910
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.2 6 5 ) 2 .3 8 (.0 9 4 )
6 .3 5 (.2 5 0 ) 2 .1 9 (.0 8 6 )
-A -
1 .2 7 (.0 5 0 ) 0 .5 8 (.0 2 3 )
5 .4 6 (.2 1 5 )
0 .8 8 (.0 3 5 ) 0 .4 6 (.0 1 8 )
5 .2 1 (.2 0 5 )
L E A D A S S IG N M E N T S
4 1 - GATE
6 .4 5 (.2 4 5 ) 2 - D R A IN
5 .6 8 (.2 2 4 ) 3 - SOURCE
1 .5 2 (.0 6 0 ) 6 .2 2 (.2 4 5 ) 4 - D R A IN
1 .1 5 (.0 4 5 ) 5 .9 7 (.2 3 5 )
1 2 3
-B - N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 .2 8 (.0 9 0 ) 9 .6 5 (.3 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
1 .9 1 (.0 7 5 ) 8 .8 9 (.3 5 0 ) 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ).
1 .1 4 (.0 4 5 ) 1 .1 4 (.0 4 5 )
3X 0 .8 9 (.0 3 5 )
0 .7 6 (.0 3 0 ) 3X 0 .8 9 (.0 3 5 )
0 .6 4 (.0 2 5 )
E XA M P L E : TH IS IS A N IR F U 1 2 0
W IT H A S S E M B L Y
LOT CODE 9U1P IN TE R N A T IO N A L
F IR S T P O R TIO N
R E C TIF IE R
IR F U OF PART NUMBER
LO G O
12 0
9U 1P
AS SEMBLY S E C O N D P O R TIO N
LOT CODE OF PART NUM BER
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IRFR/U3910
TR TRR TR L
12 .1 ( .4 76 ) 8 .1 ( .3 18 )
F E E D D IR E C T IO N F E E D D IR E C T IO N
11 .9 ( .4 69 ) 7 .9 ( .3 12 )
NO T ES :
1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R .
2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
13 IN C H
16 m m
NOTES :
1. O U T LIN E C O N F O R M S T O E IA -481 .
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Data and specifications subject to change without notice. 5/98
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/