MICROWAVE DEVICE

Schottky diode and Pin diode

Presented By:
Anuj Jain
Kaveri Patil
4.1.2.4 VARACTOR DIODES
⚫ The variable-reactance (varactor) diode makes use of the change in capacitance of a pn
junction is designed to be highly dependent on the applied reverse bias.
⚫ The capacitance change results from a widening of the depletion layer as the reverse-bias
voltage is increased.
⚫ As variable capacitors, varactor diodes are used in tuned circuits and in voltage-controlled
oscillators.
⚫ Typical applications of varactor diodes are harmonic generation, frequency multiplication,
parametric amplification, and electronic tuning.
⚫ Multipliers are used as local oscillators, low-power transmitters, or transmitter drivers in radar,
telemetry, telecommunication, and instrumentation.
⚫  
⚫ Lower frequencies: used as voltage-variable capacitor
⚫ Microwaves: used as frequency multiplier
⚫ this takes advantage of the nonlinear V-I curve of diodes

⚫ Varactors are used as voltage-controlled capacitors

⚫ Definition: The diode whose internal capacitance varies
with the variation of the reverse voltage such type of diode is
known as the Varactor diode.
⚫ The varactor diode is used in a place where the variable
capacitance is required, and that capacitance is
controlled with the help of the voltage.
⚫  also known as the Varicap, Voltcap, Voltage variable
capacitance or Tunning diode.
⚫ The varactor diode operates only in reverse bias.
⚫ The Varactor diode is used for storing the charge not for
flowing the charge. In the forward bias, the total charge
stored in the diode becomes zero, which is undesirable. 
⚫ formula gives the capacitance of varactor diode,

W – width of depletion region

⚫ capacitance of the varactor diode decreases with the increases of the

depletion region.
⚫ increase in capacitance means the more charges are stored in the
diode. 
4.1.2.5 PIN DIODE
⚫P-type --- Intrinsic --- N-type
⚫Used as switch and attenuator
⚫Reverse biased - off
⚫Forward biased - partly on to on depending on the bias
PIN Diode
Definition: PIN diode is formed by sandwiching intrinsic layer (high resistivity
about 0.1 Ω-m) between P-type and N-type semiconductor to create an
electric field between them. Due to this large magnitude of the electric field,
the electron-hole pair generation will augment up to a large extent and this, in
turn, can process even a weak input signal.

The width of these depletion layers is large due to which capacitance will
decrease because capacitance decreases with the separation between
electrodes. Here P-type and N-type region are acting as anode and cathode
respectively.
Construction of PIN diode
Pin diode consists of two layers of semiconductors and one layer of intrinsic
material in between them. The Semiconductor layer are usually of P-type and
n-type. Pin diode can be constructed in two ways using planar structure and
mesa structure. In a planar structure, a very thin epitaxial layer is fabricated on
the P-type substrate. This epitaxial layer consists of P+ regions.
Similarly, an epitaxial layer is fabricated on N-type substrate, and that will be
comprised of N+ region. And in between these semiconductors, a layer of
intrinsic material of width 10-200 microns and resistivity 0.1 Ω-m is introduced.
Semiconductor layer provides ohmic contacts.
Working of PIN
When PIN diode is unbiased, Diode
the charge carriers will flow from N-type region to
intrinsic region due to the concentration gradient. Thus, the width of the
depletion region at NI junction (Intrinsic and N-type material) will be more on
N side and less on I-side.

The reason behind this is N-type material is heavily doped while the Intrinsic
layer is not doped or doping level is extremely low. Thus, when charge carriers
(electrons-majority carriers in N-type) flow from N-type to Intrinsic layer the
depletion region will be created, but the width of it on both the sides of N-I
junction will be different.
This is the electrical circuit equivalent of the pin diode
Cp and Lp are package capacitance and package
inductance respectively.
Rs is semiconductor and contact resistance.
Cj and Rj are junction capacitance and junction
resistance respectively.
Forward bias:
In the forward bias Cp and Cj behaves as open circuit
therefore, the electrical circuit equivalent is as shown in
the figure.
so in a forward bias pin diode acts as a variable resistor
(linear device unlike other diodes)
Reverse Bias:
in the reverse bias , the depletion layer is increased and
capacitance is decreased. Thus, Cj have significant
capacitance.
The electrical equivalent of the diode in the reverse bias
is as shown in the figure.
Applications of PIN diode
1. As Radio-frequency Switch: PIN diode can be used as RF and
microwave switch. This RF switch is used in antennas in half duplex
mode to switch from receiving to transmitting mode.
Pin diode is used as single pole switch either in series or shunt
configuration.
 Series Configuration:
The diode is in series with transmission line.In the series
configuration when the diode is forward biased switch is
ON when the diode is reverse biased switch is off .
it provides minimum insertion loss over broad
frequency range.
 Shunt Configuration:
The diode is in between two transmission lines .In the
shunt configuration when the diode is forward biased
switch is OFF when the diode is reverse biased switch is
ON .
it provides maximum isolation over broad frequency
range.
2) As Attenuator and RF protection Circuit: When PIN diode is forward
biased, it works as a variable resistor. Thus, it can be used for protection of RF
circuit from high current which may damage the circuit. When the forward
biased is increased the resistance decreases suddenly, thus, it can be used as
an attenuator.

Series Configuration:
In series attenuation decreases with i
Shunt configuration:
Attenuation increases with biasing current because most
of the RF energy is absorbed in the diode.
4.1.2.7 SCHOTTKY BARRIER DIODE
 WORKING
⚫ When a metal and lightly doped semiconductor meets each
other, the Schottky barrier is formed (rectifying barrier).
⚫ When doping level increases, the junction does not act as rectifier
and it becomes ohmic contact.
⚫Unbiased Schottky Diode
⚫ Under unbiased condition, electrons accumulated on the
semiconductor side will have a lower energy level than
electrons present on the metal region. Due to this reason,
electrons cannot flow across the Schottky Barrier. Under
forward biased condition, an electron present in the N-
side receives more energy to cross the junction barrier
and enters into the metal. Due to this, the electrons are
also called as hot carrier. Hence, diode is called as hot carrier
Diode.
 Forward Biased Schottky Diode
⚫ On the diode, when forward bias voltage is applied,
more electrons are formed in the metal and conductor.
Reverse Biased Schottky Diode
if a reverse bias voltage is applied, the width of depletion region
increases.

Therefore, the current flow stops. 

VI CHARACTERSTICS
 COMPARISION BETWEEN PN
AND SCHOTKEY DIODE
⚫Power dissipation due to forward voltage

Low turn on voltage:

The turn on voltage for the diode is between 0.2 and 0.3
volts. For a silicon diode it is against 0.6 to 0.7 volts
from a standard silicon diode.
Therefore less power dissipation as compared to pn
diodes
⚫Fast recovery time: 
A fast recovery time means a small amount of stored
charge that can be used for high speed switching
applications.
Output waves for high frequency inputs
⚫Due to the absence of the current flow from
metal to N-type semiconductor, it acts as a
unipolar device. Whereas, a PN junction diode is
a bipolar device.
⚫The SBD's main advantage over pn diodes is the
absence of minority carriers, which limit the response
speed in switching applications and the high-
frequency performance in mixing and detection
applications.
⚫ A Schottky barrier diode (SBD) consists of a rectifying metal-
semiconductor barrier typically formed by deposition of a metal
layer on a semiconductor.
⚫ The SBD functions in a similar manner to the antiquated point
contact diode and the slower-response pn-junction diode, and is
used for signal mixing and detection.
⚫ The point contact diode consists of a metal whisker in contact
with a semiconductor, forming a rectifying junction.
⚫ The SBD is more rugged and reliable than the point contact
diode.
⚫ SBDs are zero-bias detectors.
⚫ Frequencies to 40 GHz are available with silicon SBDs, and GaAs
SBDs are used for higher-frequency applications.