CHAPTER 1

PART 2
DIODE
 INTRODUCTION
• diode is a semiconductor device that
essentially acts as a one-way switch for
current.
• It allows current to flow easily in one
direction, but severely restricts current from
flowing in the opposite direction.
• Diodes are also known
as rectifiers because they change
alternating current (ac) into pulsating direct
current (dc).
• Diodes have polarity, determined by
an anode (positive lead)
and cathode (negative lead).
 Construction of Diode
A diode is formed by joining two equivalently doped P-Type and N-Type semiconductor. The P-Type
semiconductor has excess holes and is of positive charge. The N-Type semiconductor has excess electrons.

At the point of contact of the P-Type and N-Type regions, the holes in the P-Type attract electrons in the N-Type
material. Hence the electron diffuses and occupies the holes in the P-Type material. Causing a small region of
the N-type near the junction to lose electrons, in the P-type a small region gets filled up by electrons.
 This thin intrinsic region is called depletion layer, since its depleted of charge and hence offers high
resistance. Its this depletion region that prevents the further diffusion of majority carriers. In physical terms
the size of the depletion layer is very thin.
depletion layer

• A diode has two terminals; one terminal is taken from

the P-type layer and it is known as Anode. The second
terminal is taken from the N-type material and it is
known as Cathode.
Diode Symbols
 DIODE BIASING
• No electron move through the pn-junction at equilibrium
state.
• Bias is a potential (dc voltage) applied to a pn junction to
obtain a desired mode of operation –control the width of
the depletion layer.
• Two bias conditions : forward bias & reverse bias.
 Forward bias

• when anode terminal is connected with a positive terminal and cathode is connected with the
negative terminal of the battery, the diode is said to be connected in forward bias. When a diode
is forward-biased, it allows current to flow.
• Bias voltage must be greater than barrier potential (0.3 V for Germanium or 0.7 V for Silicon).
• The depletion region narrows.
• R –limits the current which can prevent damage to the diode
• As more electrons flow into the depletion region, the no. of +ve ion is reduced.
• As more holes flow into the depletion region on the other side of pn junction, the no. of –ve ions is
reduced.
• Reduction in +ve & -ve ions – causes the depletion region to narrow.
 Reverse bias

• When anode terminal of diode is connected with a negative terminal

and cathode is connected with the positive terminal of a battery, the
diode is said to be connected in reverse bias. When a diode is reverse-
biased, it acts as an insulator and does not permit current to flow.
• The depletion region widens than in forward bias.
• The diode symbol's arrow points against the direction of electron flow.
DIODE IV CHARACTERISTICS
 Forward Characteristic
•Forward Voltage is measured across the diode and Forward Current is a measure of current
through the diode.
•When the forward voltage across the diode equals 0V, forward current (IF) equals 0 mA.
•When the value starts from the starting point (0) of the graph, if VF is progressively increased
in 0.1-V steps, IF begins to rise.
•When the value of VF is large enough to overcome the barrier potential of the P-N junction, a
considerable increase in IF occurs. The point at which this occurs is often called the knee
voltage VK. For germanium diodes, VK is approximately 0.3 V, and 0.7 V for silicon.
•If the value of IF increases much beyond VK, the forward current becomes quite large.
•This operation causes excessive heat to develop across the junction and can destroy a diode.
To avoid this situation, a protective resistor is connected in series with the diode. This resistor
limits the forward current to its maximum rated value. Normally, a currentlimiting resistor is
used when diodes are operated in the forward direction.
 Reverse Characteristic

• When the reverse voltage of a diode is increased from the

start, there is a very slight change in the reverse current.
• At the breakdown voltage (VBR) point, current increases
very rapidly. The voltage across the diode remains
reasonably constant at this time.
• This constant-voltage characteristic leads to a number of
applications of diode under reverse bias condition.
• The processes which are responsible for current
conduction in a reverse-biased diode are called
as Avalanche breakdown and Zener breakdown.
 TEMPERATURE EFFECTS
As temperature increase, VF decrease, VB increase, IS
increase
 Comparison of Ge, Si, and GaAs diodes.
• Forward Voltage (VF) : GaAs > Si > Ge
• Reverse Breakdown Voltage (VB) : GaAs > Si > Ge
• Reverse Current (IS) : Ge > Si > GaAs
 Diode Equivalent Model

1.The Ideal Diode Model

2.The Practical Diode Model
3.The Complete Diode Model
 The Ideal Diode Model

• When the diode is forward-biased, it ideally acts like a closed (on) switch
• When the diode is reverse-biased, it ideally acts like an open (off) switch
• The barrier potential, the forward dynamic resistance, and the reverse current are all
neglected
 The Practical Diode Model

The practical model includes the barrier potential and the dynamic resistance is
neglected
 The Complete Diode Model

The complete model of a diode includes the barrier potential, the small forward dynamic
resistance (𝑟𝑑) and the large internal reverse resistance (𝑟𝑅)
Diode Testing
• A digital multimeter's diode test diode produces a small voltage
between the test leads enough to forward-bias a diode junction.
• Normal voltage drop is 0.5 V to 0.8 V.
• The forward-biased resistance of a good diode should range from
1000 ohms to 10 ohms.
• When reverse-biased, a digital multimeter's display will read OL
(which indicates very high resistance).
Diodes are assigned current ratings. If the rating
is exceeded and the diode fails, it may short and
either a) allow current to flow in both directions or
b) halt current from flowing in either direction.
 Example 1
Determine the forward voltage (VF) and forward current (IF ) and the voltage across the limiting
resistor (VR) for all three types of diode model. Given RLIMIT = 1kΩ, VBIAS = 10 V and r’d = 10 .
 Example 2
Determine the Reverse voltage (VR) and the voltage across the limiting resistor (VR).
Assumed IR = 1 µA.
https://www.youtube.com/watch?v=Fwj_d3uO5g8