The Study of Diluted Magnetic Semiconductor: The Case of
Manganese Doped Gallium Nitride
Merawi Tilahun Tegegne
Department of physics, Kebridhar University, Qorahay, Ethiopia
Email address:
merawi3016@gmail.com
To cite this article:
Merawi Tilahun Tegegne. The Study of Diluted Magnetic Semiconductor: The Case of Manganese Doped Gallium Nitride. World Journal of
Applied Physics. Vol. x, No. x, 2021, pp. x-x. doi: 10.11648/j.xxx.xxxxxxxx.xx
Received: MM DD, 2021; Accepted: MM DD, 2021; Published: MM DD, 2021
Ab The Study of Diluted Magnetic Semiconductor: The Case
of Manganese Doped Gallium Nitride
1. Introduction
Background and Justification
In recent years, considerable work has been devoted to the
study of diluted magnetic semiconductors. [1] Semiconductor
physics and magnetism are established subfields of
condensed-matter physics that continue to reveal a rich
variety of unusual phenomena, often in new types of solid-
state materials. [2]. Magnetic orders when it is present, has a
large impact on other material properties including transport
and optical properties. [3] In both semiconductor and
magnetic cases, sophisticated and economically important
technologies have been developed to exploit the unique
electronic properties mainly for information storage and
retrieval in the case of magnetism. The realization of
materials that combine semiconducting behavior with robust
magnetism has long been a dream of material physists [4]. As
technology advances, the number of semiconductors that are
used in technology steadily increases. Indeed many
innovations have arisen as a result of using new materials and
their heterostructures. Thus while silicon, gallium arsenide
and indium phosphide have been most widely used, other
materials like indium arsenide (InAs), indium nitride (InN),
gallium nitride (GaN), zinc oxide (ZnO) etc., are finding
important uses as well. It is important to recognize that the
ability to examine fundamental physics issues and to use
semiconductors in state of the art device technologies
depends critically on the purity and perfection of the
semiconductor crystal.[ 5] Transition metal doped GaN finds
applications in emerging fields of semiconductor spin
transfer electronics (spintronics) which exploit the spin of
charge carriers in semiconductors [6]. Based on this concept,
some new class of devices available are spin transistors
operating at very low powers for mobile applications, optical
emitters with encoded information through their polarized
light output, fast non-volatile semiconductor memory and
integrated magnetic/electronic/photonic devices. The
successful fabrication of the blue light III-IV nitride
semiconductor laser was demonstrated. [7]
Optical measurements, in connection with a theoretical
analysis of the spectroscopic data; provide a very useful tool
to analyze impurities in wide-gap semiconductors. Here, we
will concentrate on GaN: Mn in zinc-blende structure. GaN
in a cubic (zinc-blende) phase can be grown epitaxially on
cubic SiC or GaAs. It exhibits a number of very appealing
properties for device applications: It has a smaller band gap
than the wurtzite phase (by 0.2 eV), it can be easily cleaved,
and it has a higher saturated drift velocity [8].
Among all III-nitride semiconductors, gallium nitride (GaN)
possesses several remarkable physical properties that make
them particularly attractive for reliable solid state device
applications. It is a wide band gap (3.4 eV) material having
low dielectric constants with high thermal conductivity
pathways. It exhibit fairly high bond strengths and very high
melting temperatures.[6]
The low solubility of Mn in III-V semiconductors was the
main barrier to fabrication and it has only recently become
possible to grow such materials using low-temperature
molecular beam [4]. Ferromagnetic semiconductors within
TM elements have great impact and potential for realization
of the semiconductor spintronics in the next generation of
high-speed, high-density and low power electronics.[9]
The electrons and holes are thermally activated and in a
temperature range, in which the charged carriers contributed
by the impurities dominate, the semiconductor is said to be in
the extrinsic temperature range, otherwise it is said to be
intrinsic. Over a certain temperature range, donors can add
electrons to the conduction band (and acceptors can add
holes to the valence band) as temperature is increased. This
can cause the electrical resistivity to decrease with increasing
 World Journal of Applied Physics 2021; X(X): XX-XX
temperature giving a negative coefficient of resistance as
cited by [10, 4].
Semiconductors have attracted extraordinary interest as the
active elements in a wide range of devices including diodes,
transistors, logic elements, single-electron transistors,
optoelectronic devices, spintronics and sensors [11]
Essentially all of these devices are based on semiconductor
structures which provided the stages for exploring questions
of fundamental physics. As technology advances, the number
of semiconductors that are used in technology steadily
increases. Indeed many innovations have arisen as a result of
using new materials and their heterostructures. Thus while
silicon, gallium arsenide and indium phosphide have been
most widely used, other materials like indium arsenide
(InAs), indium nitride (InN), gallium nitride (GaN), zinc
oxide (ZnO) etc., are finding important uses as well. It is
important to recognize that the ability to examine
fundamental physics issues and to use semiconductors in
state of the art device technologies depends critically on the
purity and perfection of the semiconductor crystal [12].
Among all III-nitride semiconductors, gallium nitride
(GaN) possesses several remarkable physical properties that
make them particularly attractive for reliable solid state
device applications. It is a wide band gap (3.4 eV) material
having low dielectric constants with high thermal
conductivity pathways. It exhibit fairly high bond strengths
and very high melting temperatures. The large bond strengths
could possibly inhibit dislocation motion and improve
reliability in comparison to other II-VI and III-V materials. In
addition, the nitrides resist chemical etching, tolerate
radiations and therefore, allow GaN-based devices to be
operated in harsh environments. GaN is also a suitable
candidate for spintronics application as the mature process
technology makes it easy for doping magnetic elements into
its matrix to induce spin polarization [13].
The GaN based p-n junction LED emission wavelengths
were in the range of 370-390 nm, together with deep level
emission at 550 nm. There are two basic options. The first
method would be colour mixing through integration of red,
blue and green LEDs in the same package. The second is
colour conversion through the use of a phosphor or organic
dye inside the package to convert the blue light from a GaN
based LED into white light [12]. Traffic lights using
InGaN/AlGaN blue-green LEDs promise to save vast
amounts of energy, since their electrical power consumption
is only 12 % of that of the present incandescent bulb traffic
lights and have extremely long lifetime (>106 h) [14].
There is also a large potential market of GaN in projection
displays, where LEDs with the three primary colours would
replace the existing liquid crystal modulation system. The
high output power of GaN based LEDs and fast off/on times
should also have advantages for improved printer technology
with higher resolution than existing systems based on
infrared lasers. [15] In underwater military systems, GaN
lasers may have applications for communications because of
a transmission pass band in water between 450 and 550 nm.
In the AlGaN system, by varying the Al concentration we can
tune the band gaps from 3.4 eV to 6.2 eV. This results in the
fabrication of solar-blind UV detectors. UV detectors have a
2
variety of military and civil applications and high
temperature sensors are desirable under extreme conditions
like inside jet engines.
It also find place in space applications as it is not affected
by harmful radiations due to shorter < 280nm wavelength
detection limit. There is an increasing interest in the use of
compound semiconductors for several high power/high
temperature solid state devices for applications in power
electronics, control and distribution circuits. While silicon
and to a much lesser extent GaAs have been used for power
devices, emerging GaN and SiC have significant advantages
because of wider band gaps (higher operating temperature),
larger breakdown voltages (higher operating voltage), higher
electron saturated drift velocity (higher operating current)
and better thermal conductivity (higher power density).
Transition metal doped GaN finds applications in
emerging fields of semiconductor spin transfer electronics
(spintronics) which exploit the spin of charge carriers in
semiconductors [16]
.
2. Material and Method
In this work we have been used the first principles
calculations and in terms of the Ruderman–Kittel–Kasuya–
Yosida quantum spin model in Green’s function approach to
investigated on the dependence of the Neel temperature on
the manganese ion concentration, the temperature
dependencies of the spin-wave specific heat and reduced
magnetization and magnetic properties of transition metal
(manganese) doped gallium nitride (GaN) based on first
principle calculation method using the Ruderman–Kittel–
Kasuya–Yosida quantum spin model in Green’s function
approach and also we would be employ computational
methods using Mat lab program by developing suitable
computer codes for studying different properties of transition
metal doped (manganese)gallium nitride and we would be
developed Mat lab code for our master equation to generate
data and the graph in different legends.
2.1. Green's Function Approach to the RKKY Model
The researcher used the standard spin RKKY Hamiltonian
model to determine coexistence of ferromagnetic and
antiferromagnetic interactions. Hamiltonian thus allows a
coexistence of ferromagnetic and antiferromagnetic
interactions in the system [8].
The Hamiltonian used to describe the system consists of
quantized magnon- magnon interaction energies written as
−1
H=
2
∑ J ij Ŝ i Ŝ j … … … …(1)
Where J ij is the RKKY effective spin exchange interaction
between local spin Ŝi and Ŝ j, ( Ŝi and Ŝ j are both quantum
spin operators), formula
 World Journal of Applied Physics 2021; X(X): XX-XX 3

4 fluctuate at all length scales d, zero temperature, finite

2 k KF
J ij =J mpd 3 2
F ( 2 K F Rij ) … … … … …(2) temperature, real-time, imaginary time (2)
2π ħ
( t ) ≫=−iθ ( t−t )−¿¿¿
' '

where F (x ) is an oscillating function defined by the

Gkk ' ( t−t ' ) =≪b k ( t ) ;b+¿
k
'

oscillatory nature of the RKKY.

Where ≪ ⋯ ≫is the abbreviated notations for the Fourier

F ( x )=
[ Xcos ( x )−sin ( x ) ] transform of the corresponding Green’s function and <... >
denotes averaging over a ground canonical ensemble. This is
4
X appropriate since the number of particles is not constant and
θ ( t ) is the step function. We note from (2) and (4) that
The coupling constant J pd in equation (2) is the local
Gk k ( t−t ) ≠0 when t <t ,G k k ( t−t ) =0 whent ' >t , and
' ' '
coupling of the itinerant spin to the local magnetic moment, ' '

m* is the effective mass of the carrier, K F is the Fermi wave Gk k ( t−t ) is not defined whent ' =t , because of the
'
'

vector … under free electron gas approximation) Rij is the discontinuity of θ ( t ) at t=0. One important property of
distance between local magnetic moments at Ri and R j. Here,
Gk k ( t−t ) is that it depends only on the difference ( t−t ' ) in
'
the magnetic atoms are distributed randomly in the full lattice
'

of the undoped semiconductor. The prime for the summation the case of statistical equilibrium.
in equation (1) means that the summation is done only over
the sites occupied by magnetic impurities. Hence, we use θ ( t−t ' )=1 if t>t ' ∧θ ( t−t ' )=0 if t <t ' ( 6 )
Green’s function approach (1) to treat the model equation +¿≫ ….. (7 )¿

Gk k ( t−t ' )=≪ b k ( t ) ,b k

+¿≫=≪ bk , bk ¿
(3.1). In this scheme one uses a double-time Green’s function
'

' '

≪^ ^ ( t ' ) ≫this satisfies the following equation of

A (t ) ; B
motion: In order to obtain equation of motion we differentiate
equation (2.1) With respect to t and multiplying both sides of
i ( 2.3 ) by i.
d ^ ( t ' ) ≫=δ ( t−t ' ) < [ ^
ħ ≪^A (t ); B A (t ) , B A ( t ) , Ĥ ] ] ; ^B d( t ' ) … …(3)
^ ( t ' )> +≪ [ ^ d ( t ' ) ≫=δ (t−t ' ) <¿ ¿
dt i Gkk ' ( t−t ' ) =i ≪b k ( t ) , b+¿
k'
dt dt
This approach proves successful for various Heisenberg
spin models on regular lattices. Usually, one needs more than To solve equation ( 2.3 ) it is convenient to work with the
one Green’s function when spin S is larger than for our Fourier transformation of this equation.
random spin system we construct double-time spin Green’s Now let G kk ' ( ω ) be the Fourier transform of G kk ' ( t −t ' )
functions between 1/2 spin operators at two magnetic sites Ri such that
and Rj.
Gkk ' ( t−t ' ) =∫ Gkk ' ( ω ) e−iω (t −t ' ) dω … … … … .. ( 8 )
Gij ( t , t ' )=¿ ≪ Ŝ
n + ¿ ( t ); ¿¿¿
¿
i

And
Where’ n’ takes 1, 2, 3... 2S. as a rule, we needs 2S
independent Green’s functions for spin S. They can be G kk ' ( t −t ' ) =∫ Gkk ' ( t −t ' ) e−iω(t −t ' ) d ( t −t ' ) ( 9 )
expressed as
−iω ( t−t ' ) In addition, the delta function can be defined as
1
n
G ( t ,t ' )=
ij
2π ħ
∫ Gnij ( ω) e ħ
dω
δ (t−t ' )=∫ eiω (t −t ' ) dω … … … … … ( 10 )
2.2 The Green’s Function Formalism Using equation (5), (6) and (7) in equation 4 we have got,
The Green functions play the most important part in the
field theoretical treatment of the many body problems, and ωG kk ' ( ω )=[ b k ( t ) ,b k ' ( t ' ) ] >ω+≪ [ b k ( t ) , H ] ; b k ( t ' ) ≫ ω ( 11 )
'

are especially useful for summing over the restricted classes d

of perturbation theory of diagrams, and also are very power Wherei b k ( t )= [ b k ( t ) , H ] And
full when combined with spectral representations. And also H=¿ H magnon dt ≥ω < b+¿; b >¿ ¿
k
k k
they are flexible enough to describe the effects of retarded The commuting and anti-commuting relation for the two
interactions and all quantities of physical interest like operators is also given by:
thermodynamic properties can be derived from them. There
are different types of Green functions, or propagators: one [ b k b k ' ]=bk b k' −ηb k bk ' .
particle, two- particle... n particles, advanced, retard the
Curie temperature itself is a critical point, where the Where η =1for Boson operators, and η=−1for fermions
magnetic susceptibility is theoretically infinite and, although operators. That is
there is no net magnetization, domain-like spin correlations
 World Journal of Applied Physics 2021; X(X): XX-XX 4

[ ]
+ ¿b kσ … …… . (12 )¿
+ ¿−bk σ ¿ 1 1 P
¿=b kσ b k ' σ '
+¿≫−iδ= =
2 π ( ω−iδ ) −ωk 2ω ( ω−ω K )
+iδω ( ω−ωk ) ( 20 ) ¿
≪ bk , bk
For two boson operators:
Where P is the principal part of the integral…finally;
b kσ b k σ =0 … … … … ( 13 ) dω
¿ b k b k ≥lim i ∫ δ ( ω−ωk )
' '

βω This can be
For two fermions operator:
δ →0 e −1
expressed as
+ ¿b k =δ ' δ (14 ) ¿
+¿+b k σ ¿
'
kk σσ

b k σ =bkσ b 1
' '

' '
k' σ '
n k= … … … … … … … . ( 21 )
βω
e −1
{b kσ ,b k σ }= {b+ikσ b+ik σ }=0 ( 15 )
' ' ' '

Where n k =¿ b k b k > ¿ is the number of magnons in state k.

The correlation function ¿ b k ( t ) , bk ( t )> ¿ is related to the '

2.3 Magnon Distributions Function

analytic property of Green functions by
∞
A magnon is a quantized spin wave [19]. The ground state
¿ b k ( t ) b k ( t )≥i lim i ∫ ¿ ¿ ¿ ¿
+i
'
of a simple ferromagnet has all spins Parallel. At long wave
σ → 0 −∞
lengths ka << 1 so that, the frequency of magnon ω k is
d proportional to k 2; In the same limit the frequency of a
i b =¿
dt k phonon is proportional to k.
The quantization of spin waves proceeds exactly as for
¿ ∑ ω [ bk , bk bk ]
+i photons and phonons. The energy of a mode of frequency
'

with ω k n k magnons can also be equated to,

Ek =¿
¿ ∑ ω k [ bk , b+i
k
bk ] b k + ∑ ωk b+ik [ bk b k ]
' '
' '
kk kk

¿ ∑ ω k bk δ kk +0=ω k b k , k=k ' '

The excitation of magnon of corresponds to the reversal of
kk
' 1
one spin equation ( 12 ) is the Bose-Einstien distribution
2
Taking the Fourier transformation( 2.6 ) , we get
that magnons also obey. The total number of magnons in all
δ kk modes excited at temprature T can be caculated as:
+ ≪ [ b k , H ] , b+¿≫
'
ω ( 16 ) ¿
ωG kk =
∑ ¿ nk ≥∫ D ( ω) n ( ω ) dω … … … … (23 )
' '
2π k

k
Where [ b k , H ] is the commutation relation of b k with the
magnon Hamiltonian, where Where D ( ω ) is the number of magnon modes per unit
frequency range. The integral is taken over the allowed range
[ b k , H magnon ]=ω k b k andfor k=k ' ,δ kk =1 '
of k, which is the first Brillouin zone. At sufficiently low
temperature we may carry the integral between 0 and ∞
These give
because ¿ n(ω)> →0 exponentially as → ∞ .
1 ω …… … ( 17 ) ¿ Magnons have a single polarization for each value of k
⋯ ωGkk ( ω ) = +≪ ω k b k ,b +¿≫ '
[12].
2π k
In three dimensions the number of modes of wave vector

( )
1 3(
+ ¿≫=ωGkk (ω )¿
+¿ ≫ω=ωk ≪ bk ,bk ¿
Where ≪ ωk b k , b k' from which we less than k is 4 π k ) per unit volume, hence the
3

obtain 2π
1 1 number of magnons with frequency in dω at ω is:
( ω=ω k ) Gkk ( ω )= 2 π , Gkk ( ω ) = (18 )
2 π ( ω−ωk )
Poles of the Green function are given by ( ω−ω k ) from
which we find despersion. Again considering equation( 7 ) and
( )1 3
2π
( 4 π k 2 ) dk … … … … . ( 24 )
dω
taking t=t ' equal time correlation gives the number operators; Under this assumption, the magnon part of the
Hamiltonian can be written like a harmonic oscillator or
≪ bk , b
+¿≫+iδ=
1
=
1 P
2 π ( ω+ iδ ) −ωk 2ω ( ω−ω K )
+iδω ( ω−ω k ) ( 19 ) ¿
[ ] phonon type Hamiltonian:
k
⟨ H magnon ⟩ =∑ ħ k ω k … … ( 25 )
k
 World Journal of Applied Physics 2021; X(X): XX-XX 5

Where is the average number of magnons in state k and internal energy of unit volume of magnon gas in thermal
ω k =2 xJS a 2 k 2 is the long wave length magnon dispersion. equilibrium at a temperature T i neglecting magnon-magnon
interaction, at very low external field and considering
substituting ω k in to equation ( 25 ) , for ω k we get
ka ≪ 1is givenby :
1
+¿ bk ≥ … ….. ( 26 ) ¿
2 2
ωK
U =∑ ω K ⟨ nk ⟩ T =∑
2 xJS a k

¿ bk e
k BT
−1
βω
… … … ( 35 )
k K e −1
∞
1 4 π k 2 dk taking ω k =2 xJS a k … … … … … … … . ( 36 )
2 2
∑ ¿ nk ≥ 2 π 3 ∫ 2 xJS a k … . ( 27 ) 2 2

k 0 k T ∞ 2
e −1 B
1 ωK 4 ω K dk
3∫
U= 2 2
… … … … … … … … … ( 37 )
∞
k dk
2 ( 2 π ) 0 2 xJS a k
∑ ¿ nk>¿= 1 ∫ 2 xJS a k
2 2 … … … .. ( 28 ) ¿ KB T
k 2π 0
2
kB T
e −1 2
Again from equation( 3.16 ) dω k =2 xJS a ( 2 k ) dk and
2 xJS a2 k 2 4 xJS a 2 k 2 dk ωK
let y= and dy = solving k, dk 2 =
k BT k BT 2 xJS a
2

1
1
( )
1 1 2
kb T 2 2 We get dk = ωK 2 d ωK
k= y … … … … ….. ( 29 ) ( 8 xJS a2 )
2 XJS a 2
3
and ∞
1 1 ωK 2
1
U= 1∫
4 π 2 0 2 xJS a2 k 2
… … … … ….. ( 38 )

( )
1
2 kb T 2 y 2
( 8 xJS a ) 2 2
βω
k dk = … … … … … ….. ( 30 ) e −1
2 XJS a 2
2
ωK
Substituting equation ( 2.21 ) in to ( 2.19 ) , we get Let y= T and
kB
1
d ωK d ωK
( )
∞ 3 ∞
1 kB T y 2
=dy ⇒ dy k B T =d ω K ∧k B T =
∑ nk= 2 π 2 ∫ 2 XJS a2 2
∫ e y −1 … … ….. ( 31 ) kBT dy
k 0 0
3
Where the integratio ∞ 2
Where 1 y …………. ( 39 )
1
4π
2 ∫ e y −1 =0.0456 then
∞ 2 0
y
∫ e y−1 =2.3174 ( 32 )
( )k
3 5 5
1 2 2
0 U =0.0456 2
B T … … … … . ( 40 )
2 xJS a2
( )
3
k BT
hence ∑ nk = ( 2.3174 )
2
2
… … … … … … ( 33 ) Specific heat capacity of magnos will be caculated as:
k 2 XJS a
∂U ∂
∂T ∂ T ∑
magnon

( )
kB T 3 ∁ = = ω K ¿ nk >¿T … … … … ( 41 ) ¿
∑ nk =(0.0587) 2 XJS a2
2
… … … … … … … … . ( 34 ) k
k

[ ( ) ]
3 5 5
∂ 1
Where eqution ( 25 ) gives us the number of reversed spins ∁magnon= 0.0456 2
k B 2 T 2 … … … … . ( 42 )
∂T 2 xJS a2
given by the ensemble average of the spin wave occupancy
numbers.

( )
3 5 3
The average magnons excitation energy at low temprature magnon 1
∁ =0.113 2
k B 2 T 2 … … … … … .. ( 43 )
is given by: ⟨ H ⟩ =∑ ⟨ n k ⟩ ω k … … … … . ( 2.33 )
magnon
2 xJS a2
k
3
2.3.1. Magnon Heat Capacity in Ferromagnetism This shows that ∁magnon T 2
Magnons are other important types of energy excitation
and they occur in magnetically ordered solids (3). The 2.3.2 Magnon Heat capacity in Antiferromagnetism
 World Journal of Applied Physics 2021; X(X): XX-XX 6

We have seen that in the absence of an external magnetic 2.4 Ferromagnetic Transition Temperature
field of the two magnon branches are degenerate, i.e
Ferromagnetism refers to solids that are magnetized
ω K =2 √ 2 Jskxa
±
without an applied magnetic field. These solids are said to be
Hence the internal magnon energy for anti-ferromagnet spontaneously magnetized. Ferromagnetism occurs when
can be written as: paramagnetic ions in a solid “lock” together in such a way
that their magnetic moments all point (on the average) in the
∑
U = ω K ⟨ nk ⟩ … … … … … … … … … ..(44) same direction. At high enough temperatures, this “locking”
K
breaks down and ferromagnetic materials become
This can be written as paramagnetic. The temperature at which this transition occurs
is called the
k max
1 dk Curie temperature. In the ferromagnetic state at low
U= ∫
(2 π ) 0 exp ( ω K β )−1
3
( 45 ) temperatures, the spins on the various atoms are aligned
parallel. There are several other types of ordered magnetic
k max k max structures. These structures order for the same physical
1 dk 1 dk that ferromagnetic structures do. The Weiss theory is a
U= ∫ ωK 4 k 2
= 2 ωK k
exp ( ω K β ) −1 2 π 0
2

exp ( ω
∫
reason ( 46 )
K β )−1
3 mean field theory and is perhaps the simplest way of
(2 π ) 0
discussing the appearance of the ferromagnetic state. Thus
k max the basic equation for ferromagnetic materials is
1 dk
2∫
U= 4 √3 Jsxak 3 … . ( 47 )

( )
M =N S g μ B B s … … … … … … .. ( 52 )
exp √
2π 0 4 3 Jsxa k
−1
k BT
( μ o S g μ B (H +ξ ) ) M
where a' = … … … … … (53 )
The upper limit can be taken as infinity for temperature KT
small compared with the Neel temperature. Thus
That is, the basic equations of the molecular field theory
∞
4 √ 3 Jsxa dk are the same as the Para- magnetic case plus the H → H +
U= ∫ k
3
… … … ( 48 ) γM replacement in which for the case of a simple

( )
2
2π 0 4 √ 3 Jsxa k paramagnet:
exp −1 M =N S g μ B B s ( a ) Where Bs is the Brillouin function for
kB T
spin it is easy to recover the high-temperature results of Bs .
4 √ 3 Jsxa k 4 √ 3 Jsxa S +1
i.e. Bs ( y )= y … … ..if y ≪ 1
Let y= and dy ¿ dk , then 3S
kBT kB T
μo Sg μB H
substituting in to the above equation( 2.39 ) , where a=
KT
3∞

( )
kBT T Let us now indicate how this predicts a phase transition.
We get U =
2 π2
kB
4 √ 3 Jsxa
∫ y3 e dy
y
−1
… … . ( 49 ) By a phase transition, we mean that spontaneous
0 magnetization (M ≠ 0 with H = 0) will occur for all
∞ 4
temperatures below a certain temperature Tc called the
dy π
But the value of the integral ∫ y y ferromagnetic Curie temperature. At the Curie temperature,
3
=
0 e −1 15 for a consistent solution of (51) and (52), we require that the
Therefore, the internal magnon energy for anti- following two equations shall be identical as a′ → 0 and H =
ferromagnet is 0:

4 M 1=N S g μB Bs ( a ' ) … … … … … … … … .. ( 54 )
π 4 (k B T )
U= … … … … … … … ( 50 )
30 ( 4 √ 3 Jsxa )3 KT a '
M 2= with
N Sg μB B s γ μ˳
Hence the magnon heat capacity is given by:
H →0 … … … … … … … … ( 55 )
3
magnon ∂ U 4 π2 kB ( kB T ) eħ
∁ = = … … … … … … . ( 51 ) Where μ B= is the Bohr magneton, and g is
∂T 30 ( 4 √3 Jsxa )3 2m
sometimes called simply the g- factor, N is the number of
Thus the predicted magnon part of the heat capacity is particles per unit volume, If these (equation( 53 ) and equation
proportional to T 3 which is similar to the Debye phonon heat
capacity. (54)) are identical, then they must have the same slope as a′
→ 0.
 World Journal of Applied Physics 2021; X(X): XX-XX 7

That is, we require 1

Bs ( x ) = ¿
S
( ddaM' ) =( ddaM' )
1

a' → 0
2

a '→ 0
… … … … … … … ( 56 )
And x=
g μ B H eff
k BT
Using the known behavior of Bs ( a ' ) ' as a ' → 0we find where g is the land factor which depends on the magnitude
that equation (53) gives of L and S foe x ≪ 1.
2
μ N g S (S +1) μB γ
2 ( s+1 ) x
B s ( x )= and using H eff =H + λM we have a
T c= 0 … … … … … … … … (57 ) 3
3K
self-consistent equation for M as:
Equation (56) provides the relationship between the Curie 2 2
temperatureT c and the Weiss molecular field constant γ. M =N g μ B S ( S+1 ) ¿ ¿) ………………… ( 60 )
Note that, as expected, if γ = 0, then Tc=0 (i.e. if γ → 0, there Then the equation can be written as
is no phase transition). Further, numerical evaluation shows
that ifT ≫ T cwith H =0 have a common solution for M only
if M = 0. However, forT ≪ T c, numerical evaluation shows
that they have a common solution M ≠ 0, corresponding to
[
M 1−
Cλ
T
= ]( )
C
T
H … … … … … … … … .. ( 61 )

the spontaneous magnetization that occurs when the but M = χH so that the magnetic susceptiblity is given
molecular field over thermal effects. by:
The Curie temperature itself is a critical point, where the
magnetic susceptibility is theoretically infinite and, although C
χ= … … … … … … … … … … … … … ( 62 )
there is no net magnetization, domain-like spin correlations T −Cλ
fluctuate at all length scales. The study of ferromagnetic
phase transitions, especially via the simplified Ising spin C
model, had an important impact on the development of and obtaining the curie W eiss la, χ = which is
T −T c
statistical physics. There, it was first clearly shown that mean
field theory approaches failed to predict the correct behavior valid for T ≫ T c and which is independent of T and the
at the critical point (which was found to fall under a curie temprature is given by T c =Cλ
universality class that includes many other systems, such as The Curie temperature TC is the temperature above which
liquid-gas transitions), and had to be replaced by the spontaneous magnetization vanishes it separates the
renormalization group theory (4). When we vary the external disorder paramagnetic phase at fT > T c room the ordered
magnetic field H acting on solid its change of magnetization
ferromagnetic phase at tT < T c t he mean field constant;
M as a function of temperature T hence the susceptibility χ
∂M Tc 3 kB T c
(T) is given by: χ ( T )= lim λ= = … … … … … … … … .. ( 63 )
H →0 ∂H C N g2 S (S+1) μ B2
Thus the magnetic susceptibility of a solid χ ( T ) is
measured and it is used to categorize different kinds of solid Where C is the curie constant. The high temperature
like Ferro magnetism in which all magnetic moments are in susceptibility is generally taken as is evidence for
parallel alignment, the effective ensures the effect of ordering paramagnetic spins.
of the system experienced by each atomic site and therefore
is given by H eff =H +λM where λ> ¿0 is a constant that 2.5. Magnetization Reversal for Ferromagnetism
parameterize the strength of molecular field as a function of The number of reversal spins is given by the ensemble
the magnetization. Then the mean magnetic moment or average of spin wave occupancy number, thus for saturation
magnetization for N atoms is given by magnetization with the same assumption for the heat capacity
s and taking unit volume, the magnetization M (T) as a
∑ ( mi g μ B ) e− β m g H i eff
function of temperature can be computed by nothing that
each spin wave mode leads to one spin wave reversal. Thus
M =N ∑ μi p i=N
−s
s
… … .. ( 58 ) the spontaneous magnetization at temperature T is given by:
i
∑e −β g Heff

M s=2 μo S z=2 μo ¿
−s

Ng μ B B s (x) where Bs ( x ) is the Brillouin function given And

by the expression:
 World Journal of Applied Physics 2021; X(X): XX-XX 8

2 μo
{ }
−1
1 1
M s ( 0 )−M s ( T )=−M =2 μo ∑ ¿ n k ≥ 3∫ =g μ B ∑ sinh2 θk = g μB ∑ ( 1−γ k 2) 2 −1… … ( 7
3
dk Dk △( 2.63
3 )
M zeropoint
K (2 π ) k 2 k
e τ −1
For a simple cubic lattice this turns out to be 0.078 g μ B n.
Where M ( 0 )=g μB NS , which is ground state
The third term of equation (2.70) gives the temperature
magnetization or magnetization at absolute zero,
dependent part. Taking M (T )=g μ B nS which is ground
ferromagnetic state where all spins can exploit their mutual
exchange energy by being preferentially aligned parallel to state magnetization and neglecting the second term of
equation (2.54) we obtain
each other has lower free energy than the state where H m =0
. M (T )=M ( 0 ) ¿
Where D=2 JS x 2 at low temperature such that
Dk
2
≫τ ¿ M ( 0)¿
max

[ ]
−1
μ o 2 D 12 ∞ 1

( )
1 1
△M= π ∫ 2 e x1−1 … … … . ( 65 )
dx x ¿ M ( 0 ) 1− ∑ (1−γ k2 ) 2

( )
2 τ 0 nS k ωK
∞ 1 exp −1
Where ∫ dx x
0
2
x
1
e −1
=Γ
3
2 ()
3
ξ ( 1) there fore,
2
kB T

( )
3
△ M =0.117 μ o
k BT 2
… … … … … … … … ( 66 ) But the value of (1−γ 2)
−1
2 =
√3 , hence
D k ka

=1− √ ∑
Thus the reduction in magnetization due to thermal spin M (T ) 3 1
… … … … ( 73 )

[ ( ) ]
wave excitation is M (0 ) naS k ωK
k exp −1
( )
3
μo k BT 2 k BT
△ M =0.117 3 … … … … … … … .. ( 67 )
2 a 2 Js
Now the researcher used
k max
We can use the relation of 1 1
3
d k
∑ = 3 ∫

( ) [ ( ) ] [ ( ) ]
3
(2 π ) 0
( 1
) kBT ωK ωK
2 k
M (T )=M ( 0 ) 1− ( 0.0587 ) ( 68 ) k exp −1 k exp −1
ns 2 XJS a2 kB T kBT
The upper limit can be taken as infinity for temperatures

( )
3
M (T ) k BT 2 small compared with the Neel temperature. Thus
=1−( 0.0587 ) … … ( 69 )
M (0) 2 XJ Sa2 ∞ 2 ∞
1 1 4 k dk 1
∑ = 3∫
= 2∫

[ ( ) ] [ ( ) ]
N ωK (2 π ) 0 ωK 2π 0
Where n= and v is the lattice cell volume =a 3: k
exp
V k exp −1 k exp −1
N is the number of atoms per unit volume kB T kBT
3
that is given by : N=na .
4 √ 3 Jsxa k k BT
2.6. Magnetization and Transition Temperature for let y= ; k= y and
k BT 4 √3 Jsxa k
Anti-ferromagnet
kB T
The sub lattice magnetization at temperature T is given by d k= dy
4 √ 3 Jsxa k
M (T )=g μ B ∑ ¿ ¿
( )∫
2∞
1 1 kBT ydy
I
∑ =

[ ( ) ] 2 π 4 √ 3 Jsxak
2 y
k ωK 0 e −1
Using the spin wave canonical transformation we get the k exp −1
following kB T
M¿ ∞ 2
ydy π
The value of the integration ∫ y =
The second term of equation (2.54) gives the zero-point 6
0 e −1
contribution to the sub lattice spin deviation. It can be
Hence substituting all these values in equation (2.56) we
shown, on neglecting the Zeeman term, that will get
 World Journal of Applied Physics 2021; X(X): XX-XX 9

( )
2 shape. The reduced magnetization versus temperature curve
M (T )
=1−
√3 k BT
−−−−−−( 74 ) is obtained for x = 0.045, 0.06 and 0.075. In a reduced
M (0 ) 12 NS 4 √ 3 Jsxa k magnetization, versus reduced temperature graph, the
reduced magnetization decreases and goes to zero with
M (T ) increasing reduced temperature. At T < Tc there is saturation
But when goes to zero, T approaches to T N which
M (0 ) magnetization (ferromagnetic state) and at T > Tc there is a
gives Paramagnetic region.
M (T )
→0 T →Tc
( )
3 1 As then this gives,
4 JS M (0 )
T N =( 48 ) ( NS ) 2 x−−−−−−( 75 )
KB
( )( )
3 2
2 JS n a S
T c= χ 2 3 , thus there exists the possibility
K B 0.0587
3. Results and Discussion of ferromagnet below a certain critical temperature Tc called
In the previous chapter we have obtained expressions of the curie temperature which is directly proportional to the
magnetization, specific heat and transition temperature for concentration of the impurity atom T c ≈ χ
antiferromagnetic magnons based on spin wave theory using However, forT ≪ T c, numerical evaluation shows that
the Holstein-Primakoff transformations. In addition to these they have a common solution M ≠ 0, corresponding to the
we have also calculated the number of magnons excited in spontaneous magnetization that occurs when the molecular
the mode k at a temperature T using Green’s function. To field over thermal effects. The Curie temperature itself is a
calculate all of the above quantities first we have got the critical point, where the magnetic susceptibility is
dispersion relation for magnons in an anti-ferromagnet and theoretically infinite and, although there is no net
ferromagnet. The dispersion relation for magnons in an magnetization, domain-like spin correlations fluctuate at all
Antiferromagnete is linear in k which is quite different from length scales. The study of ferromagnetic phase transitions,
that of magnons in a ferromagnet which is quadratic in k. especially via the simplified Ising spin model, had an
In this chapter we tried to generalize the main results important impact on the development of statistical physics.
obtained in this work and investigate the results with the help Thus, there exists the possibility of ferromagnetism below a
of figures. certain Critical temperature Tc called the Curie temperature
which is directly proportional to the concentration of the
3.1. Effects of Temperature on Magnetization impurity atom. i.e. T c is proportional to the concentration
The reduced magnetization as a function of temperature (x): At temperature below Tc, the ferromagnetic state is
can be computed by noting that each spin-wave mode leads stable. For;T → 0 the magnetic moment when all spins are
to one spin reversal distributed coherently throughout the aligned completely parallel. As we have seen from the figure
entire lattice. We have got the theoretical formalism 2, the graph of Neel temperature versus manganese ion
describing the dependence of reduced magnetization due to concentration is linear. The dependence of Neel temperature
thermal spin-wave excitations on temperature as follows: on concentration is observed for GaMnN for the range (0.2-
0.8). The figure below shows that the Neel temperature for
1 GaMnN increases linearly with increasing the concentration
of manganese ion increases in the range given above from the
0.9
x = 0.045 equation( 3.58 ) and taking the constants for GaMnN
0.8 x = 0.06
x = 0.075 TN=731.5 x thus for our calculation the highest Neel
0.7 temperature obtained T=146.3k within the concentration of
0.6 0.2 as shown in the figure below.
M(T)/M(0)

0.5

0.4

0.3

0.2

0.1

0
0 10 20 30 40 50 60
T(k)

Figure 1. Reduced magnetization VS temperature when values of x are kept

constant.

As we have seen from the figure Curves are slightly

different for different values of the concentration (x) of the
manganese ion, however, they all have a convex upward
 World Journal of Applied Physics 2021; X(X): XX-XX 10

70 Because U goes to zero just at T N and vanishes at all

temperatures above it, there is no latent heat associated with
60 the disappearance of the magnetization (5). Thus the heat
capacity for anti-ferromagnet in the low-temperature region
50
arising mainly from magnons is proportional to T 3 and using
Neel Temperature TN

equation ( 2.27 ) , we can find the magnon heat capacity for

40
ferromagnetic.

( )
3 5 3
1
Hence , ∁magnon=0.113
30
2
2
k B 2 T 2 ⇒ Magnon
2 xJS a
20
heat capacity for ferromagnet
Then, we can draw the graph that shows the result of heat
10
capacity per unit volume VS temperature when values of x
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 are kept constant for ferromagnet in the figure that is shown
Concentration(X)
below.
Figure 2. Neel temperature versus concentration.
600

3.2. Implication of Specific Heat on Temperature x = 0.05

500 x = 0.06
The detailed ferromagnetic and antiferromagnetic magnon x = 0.08
specific heat capacity per unit volume versus temperature T
for GaMnN will be shown in this work. To derive the specific 400

heat we neglect magnon-magnon interactions, which is

justifiable in the very-low-temperature regions. We have seen
C(J/k)

300
that magnons behave like Bose particles. Thus the internal
energy of a system of magnons in thermal equilibrium at
200
temperature T using equation( 3.35 ) is given by:
4
π 4 (k B T ) 100
U=
30 ( 4 √ 3 Jsxa )3
0
0 10 20 30 40 50 60
60 T(k)

x = 0.045 Figure 4.Heat capacity per unit volume VS temperature when values of x are
50 kept constant in ferromagnet.
x = 0.06
x = 0.075
Table 1. Summary of spin wave properties (at low energy and at low
40
temperature).

Dispersion Magnetizatio Magnetic

C(J/k)

30 relation n Specific Heat

2 3 3
Ferromagnet ω= A1 K ≈ T 2 ≈T 2
20
Antiferromagnete ω= A1 K ≈ T 2 ≈T3
10

4. Conclusion
0
0 10 20 30 40 50 60 70 80 90 100 In the present investigation we have studied the
T(k)
ferromagnetism and anti-ferromagnetism of GaN which is
Figure 3. Heat capacity per unit volume VS temperature when values of x doped with transition metal element (manganese). Ga1-
are kept constant. XMnXN as can be considered as a model system for III-V
diluted magnetic semiconductors, which are promising
Taking the derivative of the above equation with respect to materials for future spintronics applications. In view of future
T, we get the specific heat capacity per unit volume, which is applications, a proper characterization and understanding of
3 the physical properties of Ga1-XMnXN is essential, and
4 π k B( kB T )
2
magnon
∁ = ⇒ Magnon heat capacity of techniques to increase the ferromagnetic transition
30 ( 4 √ 3 Jsxa )3 temperature like post-growth annealing must be explored.
antiferromagnetic While dilute magnetic semiconductors could be a useful class
of materials and assume a crucial role in enabling the
 World Journal of Applied Physics 2021; X(X): XX-XX 11

semiconductor spintronics devices, much remains

unanswered with regards to the mechanism of magnetism in
these materials. Traditional III-V candidates such as Ga1-
XMnXN, which are typically p-type, have been studied in great
detail. Optical as well as electrical measurements have
established carrier-mediated ferromagnetism in these
materials. However, the highest Tc obtained in these
materials >300K, making them undesirable for technological
applications and from magnon distribution function, the total
number of magnons in all modes excited at temperature T
can be calculated as:

( )
3
kB T
∑ nk=(0.0587) 2 3
, Which follows
k 2 XJS a 2 T2
relation and the Neel temperature for Ga1-XMnXN increases
when the concentration of manganese ion increases in the
range 0.2≤ x ≤ 0.8 hence Ga1-XMnXN is found to be anti-
ferromagnetism in the Neel temperature of
T N =146.3−585.2 and thus for our calculation the highest
Neel temperature obtained T=146.3k within the
concentration of 0.2. The heat capacity for anti-ferromagnet
in the low temperature region arising from magnons is
proportional to T 3 which is similar to the Debye phonon heat
capacity whereas the heat capacity of ferromagnet is
3
proportional to T 2 and the specific heat decreases with
concentration keeping the temperature constant
magnon 1
that is∁ ≈ , the magnetization reversal is flew the
x3
3
2
≈ T 2 and ≈ T respectively for ferromagnetic and
relation of
anti ferromagnetic but vanishes as T → T c for
ferromagnetism and T → T N for antiferromagnetism.

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