Types of Diode: Overview, Symbol, Working & Applications

Diode
A diode is a semiconductor device that allows electrical current to flow in one direction
only. It consists of a p-n junction, which acts as a barrier that prevents current from flowing in
the opposite direction. Diodes can be used in various applications, including rectifiers
(converting AC to DC), voltage regulators, and protection against voltage transients.
A diode is made of semiconductor material, such as silicon, with impurities added to
create a p-n junction. The p-side of the diode, called the anode, has an excess of positive
charge carriers (holes), while the n-side, called the cathode, has an excess of negative charge
carriers (electrons).
When a positive voltage is applied to the anode, and a negative voltage to the cathode,
the p-n junction is forward-biased, which allows current to flow through the diode. This is known
as the forward-bias condition. The voltage required to forward-bias a diode is called the forward
voltage or “forward threshold voltage” and is usually between 0.3 to 0.7V for a silicon diode.
When the voltage is applied in the opposite direction, with the negative voltage on the
anode, and the positive voltage on the cathode, the p-n junction is reverse-biased, which
prevents current from flowing through the diode. This is known as the reverse-bias condition. A
small leakage current can still flow through the diode when it’s in reverse bias, called Reverse
saturation current.
In summary, a diode allows current to flow easily in one direction and blocks it in the
other direction, this behavior is known as rectification. Diodes are widely used in electronic
circuits for rectification, voltage stabilization, and protection elements against voltage transients.
Types of Diode
There are several types of diodes, each with its own unique features. Diodes can be classified
into several types based on their characteristics and applications, including:
 PN Junction diode
 Zener diode
 Schottky diode
 Light-Emitting Diode (LED)
 Photodiode
 Tunnel diode
 Gunn diode
 Varactor diode
 Step-recovery diode (SRD)

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  Avalanche diode
 PIN diode
 IMPATT diode
 Shockley diode
1. PN Junction Diode
A PN junction diode is a type of semiconductor device that allows current to flow in only
one direction. It consists of two regions of semiconductor material, one doped with impurities to
create an excess of electrons (n-type) and the other doped with impurities to create a deficiency
of electrons (p-type).
When the p-type and n-type regions are brought into contact, a junction is formed where
electrons from the n-type region flow into the p-type region, creating a depletion region with a
built-in electric field that opposes any further flow of current. This allows the diode to act as a
rectifier, converting alternating current to direct current.

Application of PN Junction Diode

PN junction diodes have a wide range of applications due to their ability to allow current to
flow in only one direction. Some common applications include:
1. Rectification: PN junction diodes are often used in power supplies to convert alternating
current to direct current.
2. Clipping and clamping: PN junction diodes can be used to limit the amplitude of a signal
by clipping off the portions above or below a certain threshold.
3. Switching: PN junction diodes can be used as fast-switching devices in digital circuits.
4. Detection: PN junction diodes can be used as detectors for radio frequency signals.
2. Zener Diode
A Zener diode is a type of PN junction diode that is designed to operate in the reverse
breakdown region, where the voltage across the diode is greater than the breakdown voltage,
also known as the “Zener voltage”. This allows the diode to be used for voltage stabilization and
regulation.
When a Zener diode is reverse-biased, as the voltage across the diode increases, the
electric field in the depletion region becomes stronger and eventually reaches a point where it is
strong enough to break down the junction and allow a large current to flow.

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 This is known as the Zener breakdown. In this region, the Zener diode acts like a constant
voltage source and the voltage across the diode remains at the Zener voltage regardless of the
current flowing through it.

Application of Zener Diode

Zener diodes have several key applications due to their unique ability to operate in the
reverse breakdown region and maintain a constant voltage across the diode. Some common
applications of Zener diodes include:
1. Voltage regulation: Zener diodes are commonly used in voltage regulator circuits to
maintain a stable output voltage, regardless of changes in input voltage or load current.
2. Voltage reference: Zener diodes are often used as a reference voltage source in analog
circuits.
3. Over-voltage protection: Zener diodes can be used in over-voltage protection circuits to
protect electronic devices from voltage spikes and transients.
4. Surge protection: Zener diodes can be used in surge protection circuits to protect
electronic equipment from power surges and voltage transients.
5. Clamping: Zener diodes can be used in clamping circuits to limit the amplitude of a
signal.
3. Schottky diode
Schottky diode is a type of diode that has low forward voltage drop than ordinary silicon
PN junction diode. The forward voltage drop of it is substantially less than 0.7 volts. It is formed
with the junction of semiconductor with metal.
As compared to the PN junction diode, the Schottky diode uses metal like platinum or
aluminum instead of p-type material. The junction of the Schottky diode becomes a metal-
semiconductor junction or M-S junction and this junction creates a barrier or depletion layer
known as the Schottky barrier. It is also known as a hot carrier diode or low voltage diode or
Schottky barrier diode.
The switching of the Schottky diode is faster than the PN Junction diode. It also produces
less unwanted noise as compared to the PN junction diode. It is widely used in a variety of wave
shaping, rectification, and switching applications.

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 The symbol of the Schottky diode is based on the basic diode circuit symbol. In this
diode, metal acts as an anode, and the N-type semiconductor acts as a cathode. The real picture
of the Schottky diode and its symbol is shown below.

Application of Schottky Diode

The followings are the applications of the Schottky diode
 It is used in voltage clamping applications
 It is used in power supplies such as SMPS (Switched Mode Power supply)
 It is used in RF mixer and detector diode
 It is used in general-purpose rectifiers
 It is used in reverse current protection and discharge protection
 It is used in solar cell applications like solar panels
4. Light Emitting Diode (LED)
Light Emitting Diode (LED) is a type of semiconductor diode that emits light when an
electric current passes through it. The LED operates on the principle of electroluminescence,
where the energy from an electrical current is converted into light energy. The emitted light is
generated by electron-hole recombination taking place within the semiconductor material.
LEDs are constructed by joining a p-type material (with an excess of positive charges)
and an n-type material (with an excess of negative charges) to form a p-n junction. When a
forward bias is applied across the p-n junction, electrons from the n-type material recombine
with holes from the p-type material, releasing energy in the form of photons. The wavelength of
the emitted light depends on the semiconductor materials used, which determines the color of the
light.
The actual appearance of an LED and its symbol is shown below.

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Application of Light Emitting Diode (LED)
Light Emitting Diodes (LEDs) have a wide range of applications due to their energy
efficiency, long life, and versatility in color and size. Some of the most common applications of
LEDs include:
 Indicator lights: Used in electronic devices to display power status or operational
conditions.
 Display panels: Found in TV screens, computer monitors, and digital billboards for high-
resolution images.
 Traffic signals: Implemented in traffic lights, pedestrian crossings, and road signs for
high visibility and energy efficiency.
 Automotive lighting: Utilized for brake lights, turn signals, daytime running lights, and
interior illumination.
 General illumination: Employed in residential, commercial, and industrial lighting due to
energy efficiency and long lifespan.
 Horticulture: Used in indoor and greenhouse agriculture for optimized plant growth and
energy conservation.
 Medical applications: Employed in phototherapy treatments, surgical lighting, and
medical equipment indicators.
 Communication: Applied in optical fiber communication systems and infrared remote
controls.
 Sensors: Integrated into devices for color sensing, ambient light sensing, and motion
detection.
5. Photodiode
A photodiode is a semiconductor device that converts light into electrical current. It
operates based on the principle of the photoelectric effect, where light photons interact with the
semiconductor material, generating electron-hole pairs. When these charge carriers are separated
by an electric field or a p-n junction, a photocurrent is produced.
Photodiodes are constructed by forming a p-n junction or a p-i-n structure within a light-
sensitive semiconductor material. When light photons are incident upon the photodiode, they are
absorbed by the semiconductor, generating electron-hole pairs. The flow of these charge carriers,
under the influence of an external electric field, creates a current proportional to the incident
light intensity.

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Application of Photodiode
Photodiodes have numerous applications due to their high sensitivity, fast response times,
and ability to convert light into electrical current. Some key applications of photodiodes include:
 Optical communication: Used as receivers in fiber-optic networks.
 Solar cells: Convert sunlight into electrical energy.
 Imaging devices: Found in digital cameras and charge-coupled devices (CCDs).
 LiDAR: Employed in distance measurement and object detection.
 Ambient light sensors: Regulate screen brightness in smartphones and other devices.
 Spectroscopy: Measure light absorption and reflection in chemical analysis.
 Medical applications: Monitor heart rate, oxygen saturation, and blood pressure.
 Barcodes scanners: Decode barcodes for product identification.
 Smoke detectors: Detect smoke particles using light scattering properties.
 Infrared remote controls: Receive signals for remote-controlled devices.
6. Tunnel diode
A tunnel diode is a semiconductor diode with heavily doped p-type and n-type materials,
resulting in a narrow, highly conductive p-n junction and a thin depletion region. It was invented
by Leo Esaki, who discovered the quantum tunneling effect in semiconductors.
In its operation, when a small forward voltage is applied, electrons “tunnel” through the
potential barrier formed by the depletion region, causing a rapid increase in current. At higher
voltages, the current decreases due to reduced tunneling probability, creating a region of negative
resistance.

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Application of Tunnel diode
 High-frequency oscillators: Generate stable high-frequency signals.
 Microwave amplifiers: Amplify weak microwave signals.
 RF circuits: Utilized in radio frequency communication systems.
 High-speed switching: Employed in certain computer memory and logic circuits.
 Frequency mixing: Combine signals in non-linear mixing processes.
 Voltage-controlled oscillators: Used in phase-locked loop circuits for frequency
synthesis.
 Pulse generators: Create sharp, fast pulses for various applications.
 Waveform shaping: Modify and filter waveforms in signal processing circuits.
7. Gunn diode
The Gunn diode, invented by J. B. Gunn, is a semiconductor device that exhibits negative
differential resistance due to the Gunn effect. It lacks a p-n junction and consists of a single n-
type semiconductor material, commonly gallium arsenide (GaAs) or gallium nitride (GaN).
In its construction, the Gunn diode features two ohmic contacts connected to the n-type
material. The Gunn effect arises from a property called the transferred electron effect present in
the semiconductor.
When a high voltage is applied, electrons in the conduction band gain sufficient energy to
move to a higher energy band, decreasing their mobility. As voltage increases, the current
initially rises but eventually decreases beyond a certain threshold due to reduced electron
mobility, resulting in negative differential resistance. This characteristic enables the Gunn diode
to generate oscillations at microwave frequencies.

Application of Gunn diode

 Microwave oscillators: Generate stable microwave signals.
 Frequency multipliers: Increase input signal frequencies.
 Amplifiers: Amplify weak microwave signals.
 Electronic warfare: Signal jamming and countermeasures.
 Remote sensing: Active microwave sensors for imaging/detection.
 Local oscillators: Stable signals in superheterodyne receivers.
 Continuous wave sources: Generate continuous microwave signals.
 Wireless communication: Point-to-point and satellite systems.

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8. Varactor diode
A varactor diode, also known as a varicap diode or tuning diode, is a specialized
semiconductor diode designed to take advantage of its variable capacitance property in reverse
bias. It is primarily used in frequency modulation and tuning applications, where the capacitance
of the diode is controlled by varying the applied reverse voltage.
The construction of a varactor diode is similar to a typical p-n junction diode, but it is
specifically designed with a larger depletion region and optimized doping profiles to enhance its
capacitance-voltage characteristics. The depletion region acts as a dielectric medium between the
p and n regions, which serve as the capacitor plates.
When a reverse bias is applied to the varactor diode, the width of the depletion region
increases, causing the capacitance to decrease. By controlling the reverse voltage, the
capacitance of the varactor diode can be adjusted over a wide range, making it a voltage-
controlled capacitor.

Applications of Varactor diode

 Voltage-controlled oscillators (VCOs): Generate frequency-modulated signals.
 Phase-locked loops (PLLs): Maintain a stable output frequency locked to an input
reference.
 Frequency multipliers: Produce higher-frequency harmonics from input signals.
 FM receivers: Enable tuning of radio stations by adjusting the local oscillator frequency.
 TV tuners: Allow channel selection by varying the frequency of the local oscillator.
 Satellite systems: Facilitate tuning and frequency adjustments in communication systems.
 Electronic filters: Provide voltage-tunable filtering in various signal processing
applications.
 Impedance matching: Offer variable capacitance for optimizing impedance in RF circuits.
9. Step-recovery diode (SRD)
The step-recovery diode (SRD) is a specialized semiconductor diode known for its rapid
switching behavior from a conducting state to a non-conducting state. It has a tailored doping
profile, with a gradually decreased doping concentration from the p-n junction towards the n-
side, creating a “drift region” with a low concentration of majority charge carriers.

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When forward-biased, the SRD conducts current like a regular diode. When quickly reverse-
biased, charge carriers stored in the drift region are rapidly swept out, causing a sudden increase
in reverse current, followed by an abrupt drop as the charges deplete. This rapid transition
generates sharp voltage pulses and harmonic content at high frequencies, making the SRD
suitable for various high-frequency applications.

Applications of Step-recovery diode (SRD)

 Pulse generation: Fast, sharp voltage pulses.
 Frequency multiplication: High-frequency harmonics creation.
 Waveform shaping: Ultrafast waveform processing.
 Sampling gates: Rapid gating in high-speed circuits.
10. Avalanche diode
An avalanche diode is a specialized semiconductor diode designed to operate in reverse
bias near its breakdown voltage, where it conducts current through avalanche multiplication.
This occurs when the reverse electric field across the p-n junction is strong enough to accelerate
free electrons and holes, generating additional electron-hole pairs through impact ionization.
The construction of an avalanche diode resembles a conventional p-n junction diode, but with a
well-defined and stable breakdown voltage achieved through optimized doping profiles and
junction geometry. When reverse-biased below its breakdown voltage, the diode has a low
leakage current. However, once the voltage reaches the breakdown point, the diode conducts
significant current due to avalanche multiplication, making it suitable for various applications.

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Applications of Avalanche diode
 Voltage regulation: Using Zener diodes for maintaining stable voltages.
 Overvoltage protection: Clamping voltage to protect sensitive components.
 High-speed switching: Rapid response to voltage changes in circuits.
 Pulse generation: Creating fast voltage pulses in high-speed applications.
11. PIN diode
A PIN diode is a type of semiconductor diode with a wide intrinsic region between
heavily doped p-type and n-type regions. This construction allows the PIN diode to function as a
variable resistor at high frequencies when forward-biased.
When forward-biased, the PIN diode acts like a conventional diode. However, at high
frequencies, the charge carriers in the intrinsic region cannot follow rapid voltage changes,
leading to a resistance that varies with forward bias current.
The PIN diode’s high-frequency capability makes it useful in various applications,
including RF switches, attenuators, photodetectors, and power limiters.

Applications of PIN diode

 RF switches: High-frequency signal path switching.
 Attenuators: High-frequency signal amplitude control.
 Photodetectors: Optical signal detection.
 Power limiters: Protection from excessive RF power.
 RF phase shifters: High-frequency signal phase shifting.
 Frequency modulators: High-frequency signal frequency modulation.
 Signal mixers: High-frequency signal mixing.
 High-frequency rectifiers: Conversion of high-frequency AC signals to DC.

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12. IMPATT diode
The IMPATT diode is a type of semiconductor diode designed to generate high-
frequency microwave signals through avalanche breakdown. Its construction is similar to a
conventional p-n junction diode, with a gradual transition between heavily doped n-type and p-
type layers creating an “avalanche region” for high-frequency microwave generation.
When reverse-biased, the IMPATT diode undergoes an avalanche multiplication process
that generates a significant number of charge carriers, leading to a rapid current increase and
high-frequency microwave signals. Its high-frequency capabilities make it suitable for various
applications in communication and radar systems, signal processing circuits, imaging, industrial
applications, and scientific research.

Applications of IMPATT diode

 Microwave oscillators: Generating stable microwave signals.

 Amplifiers: Amplifying weak microwave signals.
 Frequency multipliers: Increasing input signal frequency.
 Local oscillators: Providing stable signals in superheterodyne receivers.
 Electronic warfare equipment: Used for signal jamming and countermeasure.
 Imaging systems: Utilized for active microwave sensing and detection.
 Power generators: Producing high-power microwave signals

13. Shockley diode

The Shockley diode, also known as the p-n-p-n diode or four-layer diode, is a type of
semiconductor diode with a unique four-layer structure. The diode consists of two p-type and
two n-type semiconductor regions, with the p-type regions forming the outer layers and the n-
type regions forming the inner layers.

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 The operation of the Shockley diode is based on the principle of negative resistance.
When a forward voltage is applied to the diode, the two p-n junctions become forward-biased,
and current begins to flow. As the current increases, the voltage across the diode decreases due to
the negative resistance region in the center of the diode.

Applications of Shockley diode

 Oscillators: Generating signals for communication and electronic systems.

 Switches: Controlling current flow in electronic circuits.
 Trigger circuits: Generating pulses to initiate other electronic components.
 Latching circuits: Holding a state or information in digital circuits.
 Relaxation oscillators: Producing repetitive waveforms for timing applications.

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