PD- 95154

IRLL014NPbF
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 55V
l Dynamic dv/dt Rating
l Fast Switching RDS(on) = 0.14Ω
l Fully Avalanche Rated G

l Lead-Free ID = 2.0A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick- SOT-223
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.8
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.0
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.6
IDM Pulsed Drain Current  16
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy‚ 32 mJ
IAR Avalanche Current 2.0 A
EAR Repetitive Avalanche Energy* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 7.2 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 90 120
°C/W
RθJA Junction-to-Amb. (PCB Mount, steady state)** 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com 1

4/20/04
IRLL014NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.14 VGS = 10V, ID = 2.0A „
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 5.0V, ID = 1.2A „
––– ––– 0.28 VGS = 4.0V, ID = 1.0A „
V GS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, I D = 250µA
g fs Forward Transconductance 2.3 ––– ––– S VDS = 25V, I D = 1.0A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– 9.5 14 ID = 2.0A
Qgs Gate-to-Source Charge ––– 1.1 1.7 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 3.0 4.4 VGS = 10V, See Fig. 6 and 9 „
t d(on) Turn-On Delay Time ––– 5.1 ––– VDD = 28V
tr Rise Time ––– 4.9 ––– ID = 2.0A
ns
t d(off) Turn-Off Delay Time ––– 14 ––– RG = 6.0Ω
tf Fall Time ––– 2.9 ––– RD = 14Ω, See Fig. 10 „
C iss Input Capacitance ––– 230 ––– VGS = 0V
Coss Output Capacitance ––– 66 ––– pF VDS = 25V
C rss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
––– ––– 1.3
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse
––– ––– 16
(Body Diode)  p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V „
t rr Reverse Recovery Time ––– 41 61 ns TJ = 25°C, I F = 2.0A
Qrr Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25Ω, I AS = 4.0A. (See Figure 12)
ƒ ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com
 IRLL014NPbF

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
I D , Drain-to-Source Current (A)

4.0V

I D, Drain-to-Source Current (A)

4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V

10 10

3.0V
20µs PULSE WIDTH 20µs PULSE WIDTH
3.0V
TJ = 25°C A TJ = 150°C
1 1 A
0.1 1 10 100 0.1 1 10 100
V DS , Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,

100 2.0
I D = 2.0A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

1.5
(Normalized)

10 1.0
TJ = 25°C
TJ = 150°C

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
1 0.0 A
A
3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
IRLL014NPbF

400 20
V GS = 0V, f = 1MHz I D = 2.0A
C iss = Cgs + C gd , Cds SHORTED V DS = 44V
C rss = C gd

V GS , Gate-to-Source Voltage (V)

V DS = 28V
C oss = C ds + C gd 16
300 Ciss
C, Capacitance (pF)

12

200
Coss
8

100
Crss 4

FOR TEST CIRCUIT

SEE FIGURE 9
0 A 0 A
1 10 100 0 3 6 9 12 15
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)

I D , Drain Current (A)

10µs
10 10

TJ = 150°C 100µs

TJ = 25°C
1ms
1 1

10ms
TA = 25°C
TJ = 150°C
VGS = 0V Single Pulse
0.1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRLL014NPbF

RD
QG V DS

10V VGS
QGS QGD D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Charge Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ 90%
12V .2µF
.3µF

+
V
D.U.T. - DS
10%
VGS VGS
3mA td(on) tr t d(off) tf

IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
Thermal Response (ZthJA )

100
D = 0.50

0.20
0.10
10
0.05
PDM
0.02
0.01 t
1
1 t
2
Notes:
SINGLE PULSE 1. Duty factor D = t /t
1 2
(THERMAL RESPONSE)
2. Peak TJ = PDM x Z thJA + T A
0.1 A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t 1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5
IRLL014NPbF
80
ID

E AS , Single Pulse Avalanche Energy (mJ)

TOP 1.8A
3.2A
15V BOTTOM 4.0A
60

L DRIVER
VDS

40
RG D.U.T +
V
- DD
IAS A
10V
tp 0.01Ω 20

Fig 12a. Unclamped Inductive Test Circuit

VDD = 25V
0 A
V(BR)DSS 25 50 75 100 125 150

tp Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

6 www.irf.com
 IRLL014NPbF

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 13. For N-Channel HEXFETS

www.irf.com 7
IRLL014NPbF

SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

SOT-223 (TO-261AA) Part Marking Information

HEXFET PRODUCT MARKING
THIS IS AN IRFL014

PART NUMBE R LOT CODE

INT ERNAT IONAL
RECTIF IER FL014
AXXXX
LOGO 314P
DAT E CODE A = AS S EMBLY S IT E
(YYWW) CODE
YY = YEAR
WW = WEEK BOT TOM
T OP
P = DE S IGNATES LEAD-F REE
PRODUCT (OPTIONAL)

8 www.irf.com
 IRLL014NPbF

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.161) 0.35 (.013)

3.90 (.154) 1.85 (.072)
2.05 (.080) 1.65 (.065) 0.25 (.010)

TR 1.95 (.077)

7.55 (.297)
7.45 (.294)
16.30 (.641)
7.60 (.299) 15.70 (.619)
7.40 (.292)

1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
7.10 (.279) 2.30 (.090)
6.90 (.272) 2.10 (.083)
12.10 (.475)
11.90 (.469)

NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

13.20 (.519) 15.40 (.607)

12.80 (.504) 11.90 (.469)

330.00 50.00 (1.969)

(13.000) MIN.
MAX.

18.40 (.724)
NOTES :
MAX.
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4
3. DIMENSION MEASURED @ HUB. 12.40 (.488)
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
www.irf.com 9
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.