PD- 91499B

IRLL014N
HEXFET® Power MOSFET
l Surface Mount
D
l Advanced Process Technology VDSS = 55V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating RDS(on) = 0.14Ω
l Fast Switching G
l Fully Avalanche Rated
ID = 2.0A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick- S O T -2 2 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.8
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.0
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.6
IDM Pulsed Drain Current  16
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy‚ 32 mJ
IAR Avalanche Current 2.0 A
EAR Repetitive Avalanche Energy* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 7.2 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 90 120
°C/W
RθJA Junction-to-Amb. (PCB Mount, steady state)** 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRLL014N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.14 VGS = 10V, ID = 2.0A „
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 5.0V, ID = 1.2A „
––– ––– 0.28 VGS = 4.0V, ID = 1.0A „
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.3 ––– ––– S VDS = 25V, ID = 1.0A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– 9.5 14 ID = 2.0A
Qgs Gate-to-Source Charge ––– 1.1 1.7 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 3.0 4.4 VGS = 10V, See Fig. 6 and 9 „
td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 28V
tr Rise Time ––– 4.9 ––– ID = 2.0A
ns
td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.0Ω
tf Fall Time ––– 2.9 ––– RD = 14Ω, See Fig. 10 „
Ciss Input Capacitance ––– 230 ––– VGS = 0V
Coss Output Capacitance ––– 66 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
––– ––– 1.3
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse
––– ––– 16
(Body Diode)  p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V „
trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C, I F = 2.0A
Qrr Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25Ω, I AS = 4.0A. (See Figure 12)
ƒ ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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 IRLL014N

100 100
VGS VGS
TO P 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
I D , D rain-to-Source C urrent (A)

I D, D rain-to-Source C urrent (A )
4.0V 4.0V
3.5V 3.5V
BOT TOM 3.0V BOTTOM 3.0V

10 10

3.0 V
20 µ s P U LS E W ID TH 2 0µ s P U L S E W ID TH
3.0V
TJ = 2 5°C A TJ = 15 0°C
1 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ourc e V oltage (V ) V D S, D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,

100 2.0
I D = 2.0 A
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
I D , D rain-to-So urce C urren t (A )

1.5
(N o rm alize d)

10 1.0
TJ = 25 °C
T J = 1 50 °C

0.5

V DS = 25V
2 0 µ s P UL S E W ID TH V G S = 1 0V
1 0.0 A
A
3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

V G S , G ate-to -So urce Voltag e (V) T J , J unc tion T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRLL014N

400 20
V GS = 0V , f = 1M H z I D = 2.0 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = 4 4V

V G S , G ate-to-S ource V oltage (V )

C rs s = C gd V D S = 2 8V
C o ss = C d s + C gd 16
300 C iss
C , Capacitance (pF)

12

200
C oss
8

100
C rss 4

FO R TE S T C IR C U IT
S E E FIG U R E 9
0 A 0 A
1 10 100 0 3 6 9 12 15
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I S D , R everse Drain C urrent (A )

I D , D rain Current (A )

10µ s
10 10

TJ = 1 50 °C 1 00µs

TJ = 2 5°C
1m s
1 1

10m s
T A = 25 °C
T J = 15 0°C
V G S = 0V S ing le P u lse
0.1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRLL014N

RD
QG VDS

10V VGS
QGS QGD D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Charge Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ 90%
12V .2µF
.3µF

+
V
D.U.T. - DS
10%
VGS VGS
3mA td(on) tr t d(off) tf

IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
Therm al R esponse (Z thJ A )

100
D = 0.5 0

0 .2 0

0 .1 0
10
0 .0 5
PD M
0 .0 2
0 .0 1 t
1
1 t2

N ote s:
S IN G L E P U L S E 1 . D u ty fac to r D = t / t
1 2
(T H E R M A L R E S P O N S E )
2 . P e a k TJ = P D M x Z th J A + T A
0.1 A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t 1 , R e cta n g u lar P u lse D u ra tio n (se c )

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLL014N
80
ID

E A S , S ingle Pulse Avalanc he E nergy (m J)

TO P 1 .8 A
3 .2 A
1 5V B OTTOM 4.0A
60

L D R IV E R
VD S

40
RG D .U .T +
- VD D
IA S A
10V
tp 0.0 1 Ω 20

Fig 12a. Unclamped Inductive Test Circuit

V D D = 25 V
0 A
V (B R )D SS 25 50 75 100 125 150

tp S tarting T J , J unc tion T em perature (°C )

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

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 IRLL014N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 13. For N-Channel HEXFETS

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IRLL014N
Package Outline
SOT-223 (TO-261AA) Outline

Part Marking Information

SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14

W A FER
P A R T NU M B E R LO T CO D E
F L0 14
XXXXXX
IN TE RN A TIO NA L 31 4
RE CT IF IE R D A TE CO D E (Y W W )
LO G O Y = LA S T D IG IT O F TH E Y E A R
TOP W W = W E EK B O TT O M

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 IRLL014N
Tape & Reel Information
SOT-223 Outline

4 .1 0 (.1 6 1 ) 0 .3 5 (.0 1 3 )
3 .9 0 (.1 5 4 ) 1 .8 5 (.0 7 2 )
2 .0 5 (.0 8 0 ) 1 .6 5 (.0 6 5 ) 0 .2 5 (.0 1 0 )

TR 1 .9 5 (.0 7 7 )

7 .5 5 (.2 9 7)
7 .4 5 (.2 9 4)
1 6 .3 0 (.6 4 1 )
7 .6 0 (.2 9 9 ) 1 5 .7 0 (.6 1 9 )
7 .4 0 (.2 9 2 )

1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
7 .1 0 (.2 7 9 ) 2 .3 0 (.0 9 0 )
6 .9 0 (.2 7 2 ) 2 .1 0 (.0 8 3 )
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )

NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S .

1 3 .2 0 (.5 1 9 ) 1 5 .40 (.6 0 7)

1 2 .8 0 (.5 0 4 ) 1 1 .90 (.4 6 9)

330.00 5 0.00 (1 .9 6 9 )
(13.000) M IN .
M AX.

1 8 .4 0 (.72 4 )
N O TE S :
M AX .
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 1 4 .4 0 (.5 6 6 ) 4
3 . D IM E N S IO N M E A S U R E D @ H U B . 1 2 .4 0 (.4 8 8 )
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 3

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