TMOS E−FET.


Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate MTP8N50E
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced TMOS E−FET is TMOS POWER FET
designed to withstand high energy in the avalanche and commutation 8.0 AMPERES
modes. This new energy efficient design also offers a drain−to−source 500 VOLTS
RDS(on) = 0.8 OHM
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, converters, PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
• Robust High Voltage Termination D
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
G
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature S

CASE 221A−09, Style 5

TO-220AB

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 500 Vdc
Drain−to−Gate Voltage (RGS = 1.0 M
) VDGR 500 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Gate−to−Source Voltage − Non−repetitive (tp ≤ 10 ms) VGSM ±40 Vpk

Drain Current — Continuous @ TC = 25°C ID 8.0 Adc

Drain Current — Continuous @ TC = 100°C ID 5.0
Drain Current — Single Pulse (tp ≤ 10 s) IDM 32 Apk
Total Power Dissipation @ TC = 25°C PD 125 Watts
Derate above 25°C 1.0 W/°C

Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C

Single Pulse Drain−to−Source Avalanche Energy − STARTING TJ = 25°C EAS 510 mJ
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25
)
Thermal Resistance
− Junction−to−Case RJC 1.0
− Junction−to−Ambient RJA 62.5 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec. TL 260 °C

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

August, 2004 − Rev. XXX MTP8N50E/D
 MTP8N50E

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
(VGS = 0 Vdc, ID = 250 µAdc) 500 — — Vdc
Temperature Coefficient (Positive) — 500 — mV/°C
Zero Gate Voltage Drain Current IDSS Adc
(VDS = 500 Vdc, VGS = 0 Vdc) — — 250
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 1000
Gate−Body Leakage Current IGSS nAdc
(VGS = ±20 Vdc, VDS = 0 Vdc) — — 100
ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th)
(VDS = VGS, ID = 250 µAdc) 2.0 2.8 4.0 Vdc
Threshold Temperature Coefficient (Negative) — 6.3 — mV/°C
Static Drain−to−Source On−Resistance RDS(on) Ohms
(VGS = 10 Vdc, ID = 4.0 Adc) — 0.6 0.8

Drain−to−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc

(ID = 8.0 Adc) — 5.0 7.2
(ID = 4.0 Adc, TJ = 125°C) — — 6.4
Forward Transconductance gFS mhos
(VDS = 15 Vdc, ID = 4.0 Adc) 4.0 — —
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 1450 1680 pF
Output Capacitance Vd VGS = 0 Vdc,
(VDS = 25 Vdc, Vd
Coss — 190 246
f = 1.0 MHz)
Transfer Capacitance Crss — 45.4 144
SWITCHING CHARACTERISTICS (2)

Turn−On Delay Time td(on) — 15 50 ns

Rise Time tr — 33 72
(Rgo + C17n = 9 1
)
9.1
Turn−Off Delay Time td(off) — 40 150
Fall Time tf — 32 60
Gate Charge QT — 40 64 nC
(
(see Figure
Fi 8)
(VDS = 400 Vdc, ID = 8.0 Adc, Q1 — 8.0 —
VGS = 10 Vdc) Q2 — 17 —
Q3 — 17.3 —
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On
On−Voltage
Voltage VSD Vdc
(IS = 8.0 Adc, VGS = 0 Vdc) — 1.2 2.0
(IS = 8.0
8 0 Adc,
Ad VGS = 0 Vdc,
Vd TJ = 125°C)
— 1.1 —

Reverse Recovery Time trr — 320 — ns

(IS = 8.0 Adc, VGS = 0 Vdc, ta — 179 —

dIS/dt = 100 A/s) tb — 141 —
Reverse Recovery Stored Charge QRR — 3.0 — C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH
(Measured from the drain lead 0.25″ from package to center of die) — 4.5 —

Internal Source Inductance LS

(Measured from the source lead 0.25″ from package to source bond pad) — 7.5 —
(1) Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.

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 MTP8N50E

TYPICAL ELECTRICAL CHARACTERISTICS

16 16
VGS = 10 V
TJ = 25°C 7V 14 VDS ≥ 10 V
8V
I D, DRAIN CURRENT (AMPS)

I D, DRAIN CURRENT (AMPS)

12 6V 12

10

8.0 8.0
100°C
6.0
25°C
4.0 4.0
5V TJ = −55°C
2.0
0 0
0 2.0 4.0 6.0 8.0 10 12 14 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

R DS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS)

R DS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS)

1.6 0.90
TJ = 25°C
1.4 VGS = 10 V 0.85
1.2 TJ = 100°C
0.80
1.0
0.75
0.8 VGS = 10 V
25°C 0.70
0.6 15 V
0.65
0.4

0.2 −55°C 0.60

0 0.55
0 2.0 4.0 6.0 8.0 10 12 14 16 0 2.0 4.0 6.0 8.0 10 12 14 16
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Gate Voltage
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

2.5 100,000
VGS = 0 V
VGS = 10 V
ID = 8 A TJ = 125°C
2.0 10,000
IDSS, LEAKAGE (nA)

100°C
1.5 1,000

1.0 100 25°C

0.5 10

0 1.0
−50 −25 0 25 50 75 100 125 150 0 100 200 300 400 500
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature versus Voltage

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 MTP8N50E

TYPICAL ELECTRICAL CHARACTERISTICS

4000 10,000
VGS = 0 V TJ = 25°C
VDS = 0 V VGS = 0 V TJ = 25°C

3000 Ciss
Ciss

C, CAPACITANCE (pF)
C, CAPACITANCE (pF)

1,000

2000
Ciss
Crss Coss
100
1000 Coss
Crss
Crss
0 10
−10 −5.0 0 5.0 10 15 20 25 10 100 1000
VGS VDS DRAIN−TO−SOURCE VOLTAGE (VOLTS)

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. High Voltage Capacitance Variation

Figure 7. Capacitance Variation

12 400 1000
V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V GS, GATE−TO−SOURCE VOLTAGE (VOLTS)

QT TJ = 25°C
10 ID = 8 A
VDD = 250 V
300 VGS = 10 V
8.0
VGS
t, TIME (ns)

6.0 Q1 Q2 200 100

4.0 td(off)
TJ = 25°C 100 tr
2.0 ID = 8 A
tf
Q3 VDS td(on)
0 0 10
0 8.0 16 24 32 40 1.0 10 100
Qg, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS)

Figure 9. Gate−to−Source and Figure 10. Resistive Switching Time Variation

Drain−to−Source Voltage versus Total Charge versus Gate Resistance

8.0 100
VGS = 20 V
TJ = 25°C
SINGLE PULSE
VGS = 0 V 10 s
I S , SOURCE CURRENT (AMPS)

TC = 25°C
I D, DRAIN CURRENT (AMPS)

6.0 10
100 s

4.0 1.0 1 ms
10 ms
dc
2.0 RDS(on) LIMIT
0.1
THERMAL LIMIT
PACKAGE LIMIT

0 0.01
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.1 1.0 10 100 1000
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Diode Forward Voltage versus Figure 12. Maximum Rated Forward Biased
Current Safe Operating Area

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 MTP8N50E

600

EAS , SINGLE PULSE DRAIN−TO−SOURCE

ID = 8 A
500

AVALANCHE ENERGY (mJ)

400

300

200

100

0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

1.0
D = 0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.2

0.1
0.1
0.05

0.02

0.01
SINGLE PULSE
0.01
0.00001 0.0001 0.001 0.01 0.1 1.0 10
t, TIME (seconds)

Figure 14. Thermal Response

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 MTP8N50E

PACKAGE DIMENSIONS
CASE 221A−09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
−T− PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
STYLE 5:
1 2 3 PIN 1. GATE B 0.380 0.405 9.66 10.28
U 2. DRAIN C 0.160 0.190 4.07 4.82
H 3. SOURCE D 0.025 0.035 0.64 0.88
4. DRAIN F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04

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 MTP8N50E

Notes

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 MTP8N50E

E−FET and TMOS are trademarks of Semiconductor Components Industries, LLC (SCILLC).

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