AP65SL190AI

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ 100% Rg & UIS Test D VDS @ Tj,max. 700V

▼ Fast Switching Characteristic RDS(ON) 0.19Ω
3,4
▼ Simple Drive Requirement ID 20A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP65SL190A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer G
D
with an extreme efficient device for use in a wide range of power S TO-220CFM(I)
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.

Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage +20 V
3,4
ID@TC=25℃ Drain Current, VGS @ 10V 20 A
3,4
ID@TC=100℃ Drain Current, VGS @ 10V 12.3 A
1
IDM Pulsed Drain Current 48 A
dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) 50 V/ns
PD@TC=25℃ Total Power Dissipation 34.7 W
PD@TA=25℃ Total Power Dissipation 1.92 W
5
EAS Single Pulse Avalanche Energy 300 mJ
6
dv/dt Peak Diode Recovery dv/dt 15 V/ns
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W

Data & specifications subject to change without notice 1

201505211
AP65SL190AI
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 650 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6.2A - - 0.19 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V
gfs Forward Transconductance VDS=10V, ID=7.5A - 16 - S
IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=7.5A - 55 88 nC
Qgs Gate-Source Charge VDS=480V - 14 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 22 - nC
td(on) Turn-on Delay Time VDD=300V - 17 - ns
tr Rise Time ID=7.5A - 29 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 49 - ns
tf Fall Time VGS=10V - 25 - ns
Ciss Input Capacitance VGS=0V - 2195 3510 pF
Coss Output Capacitance VDS=100V - 62 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 2 - pF
Rg Gate Resistance
.
f=1.0MHz - 4.3 8.6 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=6.2A, VGS=0V - 0.8 - V
trr Reverse Recovery Time IS=20A, VGS=0V - 420 - ns
Qrr Reverse Recovery Charge dI/dt=50A/µs - 3.7 - µC

Notes:
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Ensure that the junction temperature does not exceed T Jmax..
o
5.Starting Tj=25 C , VDD=50V , L=150mH , R G=25Ω
o
6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25 C

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP65SL190AI

40 20

o 10V o 10V
T C =25 C T C =150 C
9.0V 9.0V
8.0V 16 8.0V
ID , Drain Current (A)

7.0V

ID , Drain Current (A)

30
7.0V
V G =6.0V
12
0.37Ω
20
V G =6.0V
8

10
4

0 0
0 6 12 18 24 30 0 8 16 24 32

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

200 4

I D =6.2A I D =6.2A
o
T C =25 C V G =10V
Normalized RDS(ON)

3
RDS(ON) (mΩ)

180 2

.
1

160 0
4 6 8 10 -100 -50 0 50 100 150

o
V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C )

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 2

I D =250uA

8
1.5
Normalized VGS(th)
IS (A)

T j = 150 o C T j = 25 o C
4

0.5

0 0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150

V SD (V) o
T j , Junction Temperature ( C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP65SL190AI

12
f=1.0MHz
10000

I D =7.5A
10
V DS =480V C iss
VGS , Gate to Source Voltage (V)

1000

0.37Ω
8

100

C (pF)
6 C oss
C rss
10

1
2

0 0.1
0 20 40 60 80 0 200 400 600 800

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

Operation in this area

limited by RDS(ON)
0.2
10

0.1
0.1
100us
ID (A)

0.05

1
1ms 0.02

10ms
. 0.01

PDM
0.01 t
Single Pulse
T
0.1 100ms
1s Duty factor = t/T

T C =25 o C DC Peak Tj = PDM x Rthjc + T C

Single Pulse
0.01 0.001
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4
 AP65SL190AI

2 40

I D =1mA
1.6

PD, Power Dissipation(W)

Normalized BVDSS

1.2

20

0.8

0.4

0 0
-100 -50 0 50 100 150 0 50 100 150

o o
T j , Junction Temperature ( C) T C , Case Temperature( C)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation
Temperature
340

T j =25 o C
300
RDS(ON) (mΩ)

260

220
V GS =10V .
180

140

100
0 4 8 12 16 20 24

I D , Drain Current (A)

Fig 15. Typ. Drain-Source on State

Resistance

5
AP65SL190AI
MARKING INFORMATION

Part Number

65SL190A
YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year
WW：Week
SSS：Sequence