AP09N90CW-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Minimize On-resistance D BVDSS 900V

▼ Fast Switching RDS(ON) 1.4Ω
▼ Simple Drive Requirement ID 7.6A
G
▼ RoHS Compliant & Halogen-Free
S

Description
AP09N90C provides minimize on-state resistance , superior switching
performance and high efficiency switching power supply applications.

TO-3P package is preferred for commercial-industrial applications and

provides greater distance between pins to meet the requirements of G
D TO-3P
most safety specifications. S

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 900 V
VGS Gate-Source Voltage +30 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 7.6 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 4.8 A
1
IDM Pulsed Drain Current 25 A
PD@TC=25℃ Total Power Dissipation 208 W
Linear Derating Factor 1.6 W/℃
2
EAS Single Pulse Avalanche Energy 120 mJ
IAR Avalanche Current 6 A
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 0.6 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W

Data & specifications subject to change without notice 1

200912163
AP09N90CW-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 900 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.74 - V/℃
3
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.6A - 1.25 1.4 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=3.6A - 3.6 - S
IDSS Drain-Source Leakage Current VDS=900V, VGS=0V - - 10 uA
Drain-Source Leakage Current (T j=125oC) VDS=720V, VGS=0V - - 500 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
3
Qg Total Gate Charge ID=7.2A - 50.7 80 nC
Qgs Gate-Source Charge VDS=540V - 12 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 16 - nC
3
td(on) Turn-on Delay Time VDD=450V - 20 - ns
tr Rise Time ID=7.2A - 16 - ns
td(off) Turn-off Delay Time RG=6.8Ω,VGS=10V - 65 - ns
tf Fall Time RD=62.5Ω - 27 - ns
Ciss Input Capacitance VGS=0V - 3097 5000 pF
Coss Output Capacitance VDS=15V - 516 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 19 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
3
VSD Forward On Voltage IS=7.2A, VGS=0V - - 1.5 A
3
trr Reverse Recovery Time IS=7.2A, VGS=0V, - 673 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9.6 - µC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=6A.
3.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP09N90CW-HF

10 5

o o
T C =25 C 10V T C =150 C 10V
7.0V 7.0V
8
5.0V 4
5.0V
ID , Drain Current (A)

ID , Drain Current (A)

4.5V

6 3

4
4.5V 2
V G =4.0V

2 1
V G =4.0V

0 0
0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.2 3.0

I D =3.6A
2.5
V G =10V
Normalized BVDSS (V)

1.1

2.0
Normalized RDS(ON)

1 1.5

1.0

0.9

0.5

0.8 0.0
-50 0 50 100 150 -50 0 50 100 150

Junction Temperature ( o C) T j , Junction Temperature ( o C)

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

100 4

10 3
VGS(th) (V)
IS (A)

T j = 150 o C T j = 25 o C

1 2

0.1 1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP09N90CW-HF

15
f=1.0MHz
10000

I D =7.2A
12 Ciss
V DS =180V
VGS , Gate to Source Voltage (V)

V DS =360V
1000

9
V DS =540V

C (pF)
6 Coss
100

Crss
0 10
0 20 40 60 80 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

DUTY=0.5
Normalized Thermal Response (Rthjc)

10 0.2

100us
1ms 0.1
ID (A)

0.1

0.05

PDM
1 10ms
t
0.02
T
100ms 0.01
o Duty factor = t/T
T c =25 C Peak Tj = PDM x Rthjc + T C

Single Pulse DC Single Pulse

0.1 0.01
1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

10V
QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform