AP4800BGM-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D

BVDSS 30V
▼ Low On-resistance D
D
RDS(ON) 18mΩ
D
▼ Fast Switching Characteristic ID 9.6A
G
▼ RoHS Compliant S
S
SO-8 S

Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial G
surface mount applications and suited for low voltage applications S
such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
3
ID@TA=25℃ Continuous Drain Current 9.6 A
3
ID@TA=70℃ Continuous Drain Current 7.7 A
1
IDM Pulsed Drain Current 40 A
PD@TA=25℃ Total Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 50 ℃/W

Data and specifications subject to change without notice 1

201009138
AP4800BGM-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A - 9.6 18 mΩ
VGS=4.5V, ID=7A - 17.8 35 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.5 3 V
gfs Forward Transconductance VDS=10V, ID=9A - 22 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=9A - 9.5 15.2 nC
Qgs Gate-Source Charge VDS=15V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.5 - nC
2
td(on) Turn-on Delay Time VDS=15V - 8 - ns
tr Rise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 21 - ns
tf Fall Time VGS=10V - 5 - ns
Ciss Input Capacitance VGS=0V - 700 1120 pF
Coss Output Capacitance VDS=15V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF
Rg Gate Resistance f=1.0MHz - 1.8 3 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=2.1A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=9A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP4800BGM-HF

80 60

T A =25 o C 10V T A = 150 o C 10V

7.0V 7.0V
50
6.0V 6.0V
ID , Drain Current (A)

5.0V

ID , Drain Current (A)

60
5.0V
40 V G = 4.0V

V G = 4.0V
40 30

20

20

10

0 0
0 2 4 6 8 10 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

28 2.0

ID=7A ID=9A
T A =25 ℃ V G =10V
24
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

20

1.2

16

0.8
12

8 0.4
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
20 1.4

16 1.2
Normalized VGS(th) (V)
IS(A)

12 1.0

T j =150 o C T j =25 o C
8 0.8

4 0.6

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP4800BGM-HF

f=1.0MHz
10 1000

ID=9A
V DS =15V
VGS , Gate to Source Voltage (V)

8 800

C iss
6 600

C (pF)
4 400

2 200

C oss
C rss
0 0
0 4 8 12 16 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

Operation in this area

limited by RDS(ON)
10
100us
0.2
ID (A)

1ms 0.1
1 0.1

10ms PDM
0.05
100ms t

1s T
0.1 0.02
Duty factor = t/T
T A =25 o C DC 0.01
Peak Tj = PDM x Rthja + T a
Rthia=125 ℃/W
Single Pulse Single Pulse

0.01 0.01
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform