AP4533GEM-HF

Halogen-Free Product
Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement D2 N-CH BVDSS 30V

D2
▼ Lower Gate Charge D1
D1 RDS(ON) 18mΩ
▼ Fast Switching Performance ID 8.4A
G2
S2
▼ RoHS Compliant & Halogen-Free G1 P-CH BVDSS -30V
SO-8 S1
RDS(ON) 36mΩ
Description ID -6A

AP4533 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible D1 D2
on-resistance and fast switching performance. It provides the G1 G2
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow S1 S2

technique and suited for voltage conversion or switch

applications.
o
Absolute Maximum Ratings@ Tj=25 C(unless otherwise specified)
Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage +20 +20 V
3
ID@TA=25℃ Drain Current, VGS @ 10V 8.4 -6.0 A
3
ID@TA=70℃ Drain Current, VGS @ 10V 6.7 -4.8 A
1
IDM Pulsed Drain Current 30 -30 A
PD@TA=25℃ Total Power Dissipation 2.0 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 ℃/W

Data and specifications subject to change without notice 1

201501073
AP4533GEM-HF

N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A - - 18 mΩ
VGS=4.5V, ID=6A - - 36 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=8A - 13 - S
IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA
Qg Total Gate Charge ID=8A - 6.5 10.5 nC
Qgs Gate-Source Charge VDS=15V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.3 - nC
td(on) Turn-on Delay Time VDS=15V - 8 - ns
tr Rise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 17 - ns
tf Fall Time RD=15Ω - 6 - ns
Ciss Input Capacitance VGS=0V - 540 860 pF
Coss Output Capacitance VDS=25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.5A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=8A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC

2
 AP4533GEM-HF

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A - - 36 mΩ
VGS=-4.5V, ID=-4A - - 65 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-6A - 9.4 - S
IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA
Qg Total Gate Charge ID=-6A - 9 14.5 nC
Qgs Gate-Source Charge VDS=-15V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5.5 - nC
td(on) Turn-on Delay Time VDS=-15V - 8 - ns
tr Rise Time ID=-1A - 9.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 20 - ns
tf Fall Time RD=15Ω - 20 - ns
Ciss Input Capacitance VGS=0V - 500 800 pF
Coss Output Capacitance VDS=-25V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=-1.5A, VGS=0V - - -1.3 V
trr Reverse Recovery Time IS=-6A, VGS=0V - 25 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 17 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

3
AP4533GEM-HF
N-Channel
40 40

T A = 25 o C 10V T A = 150 o C 10V

7.0V 7.0V
6.0V 6.0V
5.0V 5.0V

ID , Drain Current (A)

ID , Drain Current (A)

30 30

20 20
V G = 4.0V
V G = 4.0 V

10 10

0 0
0 1 2 3 4 0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

42 1.8

ID=8A
ID=6A V G =10V
T A =25 o C 1.6
34
Normalized RDS(ON)
RDS(ON) (mΩ )

1.4

26

1.2

18
1.0

10 0.8
2 4 6 8 10 25 50 75 100 125 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
8 1.6

6
Normalized VGS(th)

1.2
IS(A)

T j =150 o C T j =25 o C

0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

4
 AP4533GEM-HF
N-Channel
10 1000
f=1.0MHz
VGS , Gate to Source Voltage (V)

8 800

I D =8A
V DS =15V

C (pF)
6 600

C iss
4 400

2 200

C oss
C rss
0 0
0 4 8 12 16 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (R thja)

Operation in this area 0.2

10 limited by RDS(ON)
100us
0.1 0.1

1ms
ID (A)

0.05

1
10ms 0.02

100ms 0.01
PDM

0.01 t

0.1
1s Single Pulse
T

Duty factor = t/T

o DC Peak Tj = PDM x Rthja + Ta
T A =25 C Rthja=135oC/W
Single Pulse
0.01 0.001
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%

QG
4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf
Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

5
AP4533GEM-HF
P-Channel
40 40
o
T A = 25 C -10V o
T A = 150 C -10V
-7.0V -7.0V
-6.0V -6.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

30
30
-5.0V -5.0V

20 20

V G = - 4.0V V G = - 4.0V

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

70 1.6

I D = -6A
I D = -4 A
V G = -10V
60
T A =25 o C 1.4
Normalized RDS(ON)
RDS(ON) (mΩ )

50 1.2

40 1.0

30 0.8

20 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
6 1.6

5
Normalized VGS(th)

4 1.2
-IS(A)

o
3 T j =150 C T j =25 o C

2 0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

6
 AP4533GEM-HF
P-Channel
10 1000
f=1.0MHz
-VGS , Gate to Source Voltage (V)

8 800

I D = -6 A
V DS = -15 V

C (pF)
6 600

C iss
4 400

2 200 C oss
C rss

0 0
0 4 8 12 16 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (R thja)

Operation in this
0.2
10
area limited by 100us
RDS(ON)

0.1 0.1
1ms
0.05
-ID (A)

1 10ms
0.02

0.01
100ms PDM
0.01
t

Single Pulse T
0.1 1s
o Duty factor = t/T
T c =25 C Peak Tj = PDM x Rthja + Ta
DC Rthja=135oC/W
Single Pulse
0.01 0.001
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

7
AP4533GEM-HF
MARKING INFORMATION

Part Number
meet Rohs requirement
for low voltage MOSFET only
4533GEM
Package Code
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence