AP4957GM

Pb Free Plating Product

Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low On-Resistance D2
BVDSS -30V
D2
▼ Simple Drive Requirement D1 RDS(ON) 24mΩ
D1
▼ Dual P MOSFET Package ID -7.7A
G2
S2
SO-8 G1
S1

Description
D1 D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
G1 G2
cost-effectiveness.

S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
3
ID@TA=25℃ Continuous Drain Current -7.7 A
3
ID@TA=70℃ Continuous Drain Current -6.1 A
1
IDM Pulsed Drain Current -30 A
PD@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W

Data and specifications subject to change without notice 200420041

AP4957GM

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-7A - 20 24 mΩ
VGS=-4.5V, ID=-5A - 30 36 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-7A - 12 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=-7A - 27 45 nC
Qgs Gate-Source Charge VDS=-24V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 14 - ns
tr Rise Time ID=-1A - 11 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 38 - ns
tf Fall Time RD=15Ω - 25 - ns
Ciss Input Capacitance VGS=0V - 1670 2670 pF
Coss Output Capacitance VDS=-25V - 530 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 435 - pF
Rg Gate Resistance f=1.0MHz - 3 4.5 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-7A, VGS=0V, - 35 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 34 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
 AP4957GM

120 120

-10V o
o T A = 150 C
T A = 25 C
100 100 -10V

-ID , Drain Current (A)

-ID , Drain Current (A)

-7.0V
80 80
-7.0V

60 60

-5.0V
40
-4.5V 40
-5.0V
-4.5V
20 20
V G =-3.0V V G =-3.0V

0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

48 1.6

ID=-5A
ID=-7A
T A =25 ℃ 1.4
40
V G =-10V
Normalized R DS(ON)
RDS(ON) (mΩ )

1.2

32

1.0

24
0.8

16 0.6
3 5 7 9 11 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
7 2.0

1.5
5
Normalized -VGS(th) (V)

4
-IS(A)

T j =150 o C T j =25 o C 1.0

2
0.5

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
AP4957GM

12 10000
f=1.0MHz

ID= -7A
-VGS , Gate to Source Voltage (V)

10
V DS = - 24 V

C iss

C (pF)
6 1000

C oss
4

C rss

0 100
0 10 20 30 40 50 60 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

0.1
0.1
1ms 0.05
-ID (A)

1
10ms 0.02

0.01
PDM
100ms 0.01 t
Single Pulse T
0.1
1s
T A =25 o C Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse Rthja=135oC/W
DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

40

VG
V DS =-5V

T j =25 o C T j =150 o C
-ID , Drain Current (A)

30
QG
-4.5V
20 QGS QGD

10

Charge Q
0
0 2 4 6 8

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform