AP9977GM

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low On-resistance BVDSS 60V

▼ Single Drive Requirement D2 RDS(ON) 100mΩ
D2
▼ Surface Mount Package D1
D1
ID 3.3A
G2
S2
G1
S1
Description
D1 D2
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and G2
G1
cost-effectiveness.
S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±25 V
3
ID@TA=25℃ Continuous Drain Current 3.3 A
3
ID@TA=70℃ Continuous Drain Current 2.7 A
1
IDM Pulsed Drain Current 20 A
PD@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 ℃/W

Data and specifications subject to change without notice 201108073-1/4

AP9977GM

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.04 - V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=3A - - 100 mΩ
VGS=4.5V, ID=2A - - 125 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=3A - 6 - S
IDSS o
Drain-Source Leakage Current (Tj=25 C) VDS=60V, VGS=0V - - 10 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=48V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±25V - - ±100 nA
2
Qg Total Gate Charge ID=3A - 6 10 nC
Qgs Gate-Source Charge VDS=48V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC
2
td(on) Turn-on Delay Time VDS=30V - 6 12 ns
tr Rise Time ID=1A - 5 12 ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 32 ns
tf Fall Time RD=30Ω - 3 8 ns
Ciss Input Capacitance VGS=0V - 510 810 pF
Coss Output Capacitance VDS=25V - 55 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF
Rg Gate Resistance f=1.0MHz - 1.3 - Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=4A, VGS=0V, - 27 54 ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 32 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.

2/4
 AP9977GM

25 25

10V
o o
T A = 25 C 7.0 V T A = 150 C 10V
20 5.0V 20 7.0V
4.5V 5.0V

ID , Drain Current (A)

ID , Drain Current (A)

15 15 4.5V

10 10

V G =3.0V V G =3.0V
5 5

0 0
0 2 4 6 8 0 2 4 6 8

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0

ID=2A ID=3A
T A =25 ℃ 1.8
V G =10V

1.6
RDS(ON) (mΩ)

90
Normalized RDS(ON)

1.4

1.2

80

1.0

0.8

70 0.6
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
4 1.8

1.5
3
Normalized VGS(th) (V)

1.2
IS(A)

2
T j =150 o C T j =25 o C
0.9

0.6

0 0.3
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3/4
AP9977GM
f=1.0MHz
14 1000

ID=3A
12
C iss
VGS , Gate to Source Voltage (V)

V DS = 30 V
10
V DS = 38 V
V DS = 48 V

C (pF)
8

100

C oss
4
C rss

0 10
0 5 10 15 1 5 9 13 17 21 25 29

V DS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

0.1
0.1

100us 0.05

1ms
ID (A)

1 0.02

10ms 0.01
PDM

0.01 Single Pulse t

100ms T
0.1 o
T A =25 C Duty factor = t/T
Single Pulse 1s Peak Tj = PDM x Rthja + T a
Rthja = 135℃/W

DC
0.01 0.001
0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4/4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5 A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E C 0.19 0.22 0.25
D 4.80 4.90 5.00
1 E1 3.80 3.90 4.00
2 3 4
E 5.80 6.15 6.50
L 0.38 0.71 1.27

e θ 0 4.00 8.00
e 1.27 TYP
B

A1
DETAIL A L θ

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.
c

DETAIL A

Part Marking Information & Packing : SO-8

Part Number
Package Code
meet Rohs requirement
9977GM
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence