MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors

MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers. SILICON
Features POWER TRANSISTORS
• Pb−Free Packages are Available 8 AMPERES
• Lead Formed for Surface Mount Application in Plastic Sleeves 80 VOLTS
(No Suffix) 20 WATTS
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount MARKING
(“T4” Suffix) DIAGRAMS
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage − 4
DPAK YWW
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes J4
• Fast Switching Speeds 1 2
CASE 369C
STYLE 1 xH11
• Complementary Pairs Simplifies Designs 3
• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B 8000 V 4
Machine Model, C 400 V DPAK−3 YWW

CASE 369D J4
MAXIMUM RATINGS STYLE 1 xH11
1
Rating Symbol Max Unit 2
3
Collector−Emitter Voltage VCEO 80 Vdc
Emitter−Base Voltage VEB 5 Vdc Y = Year
Collector Current − Continuous IC 8 Adc WW = Work Week
16 x = 4 or 5
Peak
Total Power Dissipation @ TC = 25°C PD 20 W
Derate above 25°C 0.16 W/°C
Total Power Dissipation* @ TA = 25°C PD 1.75 W ORDERING INFORMATION

Derate above 25°C 0.014 W/°C See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Operating and Storage Junction Temperature TJ, Tstg −55 to °C
Range + 150
Preferred devices are recommended choices for future use
Maximum ratings are those values beyond which device damage can occur. and best overall value.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 6.25 °C/W
Thermal Resistance, Junction−to−Ambient* RJA 71.4 °C/W
Lead Temperature for Soldering TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

August, 2004 − Rev. 6 MJD44H11/D
MJD44H11 (NPN) MJD45H11 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ Characteristic Symbol Min Typ Max Unit
ÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage VCEO(sus) 80 − − Vdc
(IC = 30 mA, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VBE = 0)
ICES − − 10 A
ÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(VEB = 5 Vdc)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
IEBO − − 50 A
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) − − 1 Vdc
(IC = 8 Adc, IB = 0.4 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(IC = 8 Adc, IB = 0.8 Adc)
ÎÎÎ
Base−Emitter Saturation Voltage VBE(sat) − − 1.5 Vdc
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(VCE = 1 Vdc, IC = 2 Adc) ÎÎÎ
ÎÎÎ
ÎÎÎ
hFE 60 − − −
DC Current Gain
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
(VCE = 1 Vdc, IC = 4 Adc)
ÎÎÎ
ÎÎÎ
40 − −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector Capacitance Ccb pF
(VCB = 10 Vdc, ftest = 1 MHz) MJD44H11
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
− 130 −
MJD45H11 − 230 −
ÎÎÎÎÎ
Gain Bandwidth Product
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11
fT
− 50 −
MHz
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MJD45H11 − 40 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
SWITCHING TIMES
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Delay and Rise Times td + tr ns
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11 − 300 −
MJD45H11 − 135 −
Storage Time
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11
ts
− 500 −
ns
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MJD45H11 − 500 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time tf ns
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 − 140 −
MJD45H11 − 100 −
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2
ORDERING INFORMATION
Device Package Type Package Shipping†
MJD44H11 DPAK 369C 75 Units / Rail
MJD44H11−001 DPAK−3 369D 75 Units / Rail
MJD44H11G DPAK 369C 75 Units / Rail
(Pb−Free)
MJD44H11RL DPAK 369C 1800 Tape & Reel

MJD44H11T4 DPAK 369C 2500 Tape & Reel
MJD44H11T4G DPAK 369C 2500 Tape & Reel
(Pb−Free)

MJD45H11 DPAK 369C 75 Units / Rail
MJD45H11−001 DPAK−3 369D 75 Units / Rail
MJD45H11G DPAK 369C 75 Units / Rail
(Pb−Free)
MJD45H11RL DPAK 369C 1800 Tape & Reel

MJD45H11T4G DPAK 369C 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
1
0.7
D = 0.5
r(t), EFFECTIVE TRANSIENT THERMAL
0.5
RESISTANCE (NORMALIZED)
0.3 0.2
0.2 P(pk)
0.1 RJC(t) = r(t) RJC
RJC = 6.25°C/W MAX
0.1 0.05 D CURVES APPLY FOR POWER
0.07 PULSE TRAIN SHOWN
0.02 t1
0.05 READ TIME AT t1 t2
0.03 0.01 TJ(pk) − TC = P(pk) JC(t)
DUTY CYCLE, D = t1/t2
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k
t, TIME (ms)
Figure 1. Thermal Response
20 There are two limitations on the power handling ability of

10 100s a transistor: average junction temperature and second
500s
IC, COLLECTOR CURRENT (AMP)
5 breakdown. Safe operating area curves indicate IC − VCE

3 dc 5ms 1ms limits of the transistor that must be observed for reliable
2 operation; i.e., the transistor must not be subjected to greater
1 dissipation than the curves indicate.
0.5 THERMAL LIMIT @ TC = 25°C The data of Figure 2 is based on TJ(pk) = 150C; TC is
0.3 WIRE BOND LIMIT variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
0.1 150C. TJ(pk) may be calculated from the data in
0.05 Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
0.02 limitations imposed by second breakdown.
1 3 5 7 10 20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Forward Bias

Safe Operating Area
TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)
2 20
TC
1.5 15
1 10 TA
SURFACE
MOUNT
0.5 5
0 0
25 50 75 100 125 150
T, TEMPERATURE (°C)
Figure 3. Power Derating
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4
1000 1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN

VCE = 4 V
VCE = 4 V
100 100
1V
VCE = 1 V
TJ = 25°C TJ = 25°C
10 10
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain
1000 1000
TJ = 125°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125°C 25°C
−40 °C
25°C
100 100
−40 °C
VCE = 1 V
VCE = 1 V
10 10
0.1 1 10 0.1 1 10
Figure 6. MJD44H11 Current Gain Figure 7. MJD45H11 Current Gain

versus Temperature versus Temperature
1.2 1.2
1 1
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
VBE(sat) VBE(sat)
0.8 0.8
0.6 0.6
IC/IB = 10 IC/IB = 10
0.4 TJ = 25°C 0.4 TJ = 25°C
VCE(sat) 10
0.2 VCE(sat) 0.2
0 0
0.1 1 10 0.1 1
Figure 8. MJD44H11 On−Voltages Figure 9. MJD45H11 On−Voltages
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5
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
B C 2. CONTROLLING DIMENSION: INCH.
V R E INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3
U G 0.180 BSC 4.58 BSC
K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
F L 0.090 BSC 2.29 BSC
J
R 0.180 0.215 4.57 5.45
L H S 0.025 0.040 0.63 1.01
U 0.020 −−− 0.51 −−−
D 2 PL V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20 3.0
0.244 0.118
2.58
0.101
5.80 1.6 6.172

0.228 0.063 0.243
SCALE 3:1 inches

mm
*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
C NOTES:
B 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V R E 2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3 D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
SEATING
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
J
F V 0.035 0.050 0.89 1.27
H Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 1:
G 0.13 (0.005) M T PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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7
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative.
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8
This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors

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MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors

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Available Formats

MJD44H11 (NPN)

• Epoxy Meets UL 94, V−0 @ 0.125 in

Machine Model, C 400 V DPAK−3 YWW

Total Power Dissipation* @ TA = 25°C PD 1.75 W ORDERING INFORMATION

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

MJD44H11RL DPAK 369C 1800 Tape & Reel

MJD44H11T5 DPAK 369C 2500 Tape & Reel

MJD45H11RL DPAK 369C 1800 Tape & Reel

Figure 1. Thermal Response

20 There are two limitations on the power handling ability of

5 breakdown. Safe operating area curves indicate IC − VCE

Figure 2. Maximum Forward Bias

hFE, DC CURRENT GAIN

Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain

hFE , DC CURRENT GAIN

Figure 6. MJD44H11 Current Gain Figure 7. MJD45H11 Current Gain

SATURATION VOLTAGE (VOLTS)

Figure 8. MJD44H11 On−Voltages Figure 9. MJD45H11 On−Voltages

5.80 1.6 6.172

SCALE 3:1 inches

*For additional information on our Pb−Free strategy and soldering

PUBLICATION ORDERING INFORMATION

Datasheets for electronic components.

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