MJD47, NJVMJD47T4G,

MJD50, NJVMJD50T4G

High Voltage Power

Transistors
DPAK for Surface Mount Applications
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Designed for line operated audio output amplifier, switchmode supply
drivers and other switching applications.
NPN SILICON POWER
Features
TRANSISTORS
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix) 1 AMPERE
• Electrically Similar to Popular TIP47, and TIP50 250, 400 VOLTS, 15 WATTS
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring COLLECTOR
Unique Site and Control Change Requirements; AEC−Q101 2, 4
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant 1
BASE
MAXIMUM RATINGS
Rating Symbol Max Unit
3
Collector−Emitter Voltage VCEO Vdc EMITTER
MJD47, NJVMJD47T4G 250
MJD50, NJVMJD50T4G 400
4
Collector−Base Voltage VCB Vdc
MJD47, NJVMJD47T4G 350
MJD50, NJVMJD50T4G 500 1 2
3
Emitter−Base Voltage VEB 5 Vdc
DPAK
Collector Current − Continuous IC 1 Adc
CASE 369C
Collector Current − Peak ICM 2 Adc STYLE 1
Base Current IB 0.6 Adc
Total Power Dissipation PD
@ TC = 25°C 15 W
MARKING DIAGRAM
Derate above 25°C 0.12 W/°C
Total Power Dissipation (Note 1) PD AYWW
@ TA = 25°C 1.56 W JxxG
Derate above 25°C 0.0125 W/°C
Operating and Storage Junction TJ, Tstg −65 to +150 °C
Temperature Range A = Assembly Location
Y = Year
ESD − Human Body Model HBM 3B V WW = Work Week
ESD − Machine Model MM C V Jxx = Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the xx = 47 or 50
device. If any of these limits are exceeded, device functionality should not be G = Pb−Free Package
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended. ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

August, 2014 − Rev. 15 MJD47/D
 MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance Junction−to−Case RqJC 8.33 °C/W
Thermal Resistance Junction−to−Ambient (Note 2) RqJA 80 °C/W
Lead Temperature for Soldering Purpose TL 260 °C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0)
MJD47, NJVMJD47T4G
VCEO(sus)

250 −
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD50, NJVMJD50T4G 400 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 150 Vdc, IB = 0)
MJD47, NJVMJD47T4G − 0.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 300 Vdc, IB = 0)
MJD50, NJVMJD50T4G − 0.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICES mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 350 Vdc, VBE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD47, NJVMJD47T4G − 0.1
(VCE = 500 Vdc, VBE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD50, NJVMJD50T4G − 0.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO mAdc
(VBE = 5 Vdc, IC = 0) − 1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.3 Adc, VCE = 10 Vdc) 30 150

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1 Adc, VCE = 10 Vdc) 10 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 1 Adc, IB = 0.2 Adc) − 1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage VBE(on) Vdc
(IC = 1 Adc, VCE = 10 Vdc) − 1.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product fT MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz) 10 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain hfe −
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz) 25 −
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

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 MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G

TYPICAL CHARACTERISTICS

TA TC
2.5 25 VCC
TURN-ON PULSE
RC
APPROX
PD, POWER DISSIPATION (WATTS)

+11 V Vin SCOPE

2 20
RB
Vin 0
51
1.5 15 VEB(off)
t1
TA (SURFACE MOUNT)
t3 Cjd << Ceb -4 V
1 10 TC APPROX
+11 V t1 ≤ 7 ns
10 < t2 < 500 ms
0.5 5 Vin t3 < 15 ns
DUTY CYCLE ≈ 2%
0 0 APPROX -9 V
t2
25 50 75 100 125 150 RB and RC VARIED TO OBTAIN
TURN-OFF PULSE DESIRED CURRENT LEVELS.
T, TEMPERATURE (°C)
Figure 1. Power Derating Figure 2. Switching Time Equivalent Circuit

200 1.4
VCE = 10 V
100 1.2
TJ = 150°C
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN

60 1
40 25°C VBE(sat) @ IC/IB = 5
0.8
20 VBE(on) @ VCE = 4 V
-55°C 0.6
10
0.4 TJ = 25°C
6
4 0.2 VCE(sat) @ IC/IB = 5

2 0
0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain Figure 4. “On” Voltages

1
0.7 D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3 0.2
0.2
0.1
P(pk)
0.05 RqJC(t) = r(t) RqJC
0.1 RqJC = 8.33°C/W MAX
0.07 0.02 D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN t1
0.01
READ TIME AT t1 t2
0.03 SINGLE PULSE TJ(pk) - TC = P(pk) qJC(t)
0.02 DUTY CYCLE, D = t1/t2

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k
t, TIME (ms)

Figure 5. Thermal Response

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 MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G

5
There are two limitations on the power handling ability of
2
IC, COLLECTOR CURRENT (AMP)
100ms a transistor: average junction temperature and second
1ms 500ms
1 breakdown. Safe operating area curves indicate IC − VCE
0.5
dc
limits of the transistor that must be observed for reliable
TC ≤ 25°C operation; i.e., the transistor must not be subjected to greater
0.2
dissipation than the curves indicate.
0.1 SECOND BREAKDOWN LIMIT The data of Figure 6 is based on TJ(pk) = 150_C; TC is
THERMAL LIMIT @ 25°C variable depending on conditions. Second breakdown pulse
0.05
WIRE BOND LIMIT
limits are valid for duty cycles to 10% provided TJ(pk)
0.02 MJD47
CURVES APPLY BELOW ≤ 150_C. TJ(pk) may be calculated from the data in
0.01 RATED VCEO MJD50
Figure 5. At high case temperatures, thermal limitations will
0.005 reduce the power that can be handled to values less than the
5 10 20 50 100 200 300 500
limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Active Region Safe Operating Area

1 5
TJ = 25°C ts
0.5
VCC = 200 V 2
IC/IB = 5
0.2 tr 1
t, TIME (s)

t, TIME (s)

TJ = 25°C
μ

0.1 td 0.5 VCC = 200 V

IC/IB = 5
0.05 tf
0.2

0.02 0.1

0.01 0.05
0.02 0.05 0.1 0.2 0.5 1 2 0.02 0.05 0.1 0.2 0.5 1 2
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 7. Turn−On Time Figure 8. Turn-Off Time

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 MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G

ORDERING INFORMATION
Device Package Shipping†
MJD47G 369C 75 Units / Rail
(Pb−Free)

MJD47T4G 369C 2,500 / Tape & Reel

(Pb−Free)

NJVMJD47T4G* 369C 2,500 / Tape & Reel

(Pb−Free)

MJD50G 369C 75 Units / Rail

(Pb−Free)

MJD50T4G 369C 2,500 / Tape & Reel

(Pb−Free)

NJVMJD50T4G* 369C 2,500 / Tape & Reel

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.

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5
 MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE D

NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
4 5. DIMENSIONS D AND E ARE DETERMINED AT THE
L3 Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
D 6. DATUMS A AND B ARE DETERMINED AT DATUM
DETAIL A H PLANE H.
1 2 3
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L L 0.055 0.070 1.40 1.78
A1
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 905 CW L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−

SOLDERING FOOTPRINT* STYLE 1:

PIN 1. BASE
2. COLLECTOR
3. EMITTER
6.20 3.0 4. COLLECTOR
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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