2N6284 (NPN); 2N6286,

2N6287 (PNP)
Preferred Device

Darlington Complementary
Silicon Power Transistors
These packages are designed for general−purpose amplifier and
low−frequency switching applications. http://onsemi.com

Features
20 AMPERE
• High DC Current Gain @ IC = 10 Adc − COMPLEMENTARY SILICON
hFE = 2400 (Typ) − 2N6284
= 4000 (Typ) − 2N6287 POWER TRANSISTORS
• Collector−Emitter Sustaining Voltage − 100 VOLTS, 160 WATTS
VCEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors COLLECTOR
CASE
• Pb−Free Packages are Available*
BASE
1
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit EMITTER 2
Collector−Emitter Voltage VCEO Vdc
2N6286 80
2N6284/87 100 MARKING DIAGRAM
Collector−Base Voltage VCB Vdc
2N6286 80
2N6284/87 100
1 2N628xG
Emitter−Base Voltage VEB 5.0 Vdc 2
AYYWW
Collector Current − Continuous IC 20 Adc TO−204AA (TO−3) MEX
Peak 40 CASE 1−07
STYLE 1
Base Current IB 0.5 Adc
Total Power Dissipation @ TC = 25°C PD 160 W 2N628x = Device Code
Derate above 25°C 0.915 W/°C x = 4, 6 or 7
Operating and Storage Temperature TJ, Tstg −65 to + 200 °C G = Pb−Free Package
Range A = Location Code
YY = Year
THERMAL CHARACTERISTICS (Note 1) WW = Work Week
MEX = Country of Orgin
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.09 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum ORDERING INFORMATION
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Device Package Shipping
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. 2N6284 TO−3 100 Units/Tray

2N6284G TO−3 100 Units/Tray

(Pb−Free)

2N6286 TO−3 100 Units/Tray

2N6286G TO−3 100 Units/Tray

(Pb−Free)

2N6287 TO−3 100 Units/Tray

*For additional information on our Pb−Free strategy and soldering details, please 2N6287G TO−3 100 Units/Tray
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

September, 2008 − Rev. 4 2N6284/D
 2N6284 (NPN); 2N6286, 2N6287 (PNP)

160

140

PD, POWER DISSIPATION (WATTS)

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc
(IC = 0.1 Adc, IB = 0) 2N6286 80

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
−
2N6284, 2N6287 100 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 40 Vdc, IB = 0) − 1.0
(VCE = 50 Vdc, IB = 0) − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEX mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
− 0.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
− 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO − 2.0 mAdc
(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, VCE = 3.0 Vdc) 750 18,000
(IC = 20 Adc, VCE = 3.0 Vdc) 100 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 Adc, IB = 40 mAdc) − 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 20 Adc, IB = 200 mAdc) − 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage VBE(on) − 2.8 Vdc
(IC = 10 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage VBE(sat) − 4.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 20 Adc, IB = 200 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of Common Emitter Small−Signal Short−Circuit |hfe| 4.0 − MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6284 − 400
2N6286, 2N6287 − 600

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe 300 − −

2. Indicates JEDEC Registered Data.

3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%

http://onsemi.com
2
 2N6284 (NPN); 2N6286, 2N6287 (PNP)

VCC
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA RC
MSD6100 USED BELOW IB [ 100 mA SCOPE
TUT
V2 RB
APPROX
+ 8.0 V D1
51 [ 8.0 k [ 50
0
V1 + 4.0 V
APPROX 25 ms FOR td AND tr, D1 IS DISCONNECTED
- 12 V AND V2 = 0
tr, tf v 10 ns
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
DUTY CYCLE = 1.0%

Figure 2. Switching Times Test Circuit

10
7.0 ts 2N6284 (NPN)
5.0 2N6287 (PNP)

3.0
2.0
t, TIME (s)

tf tr
μ

1.0
0.7
0.5

0.3 VCC = 30 Vdc

I /I = 250
0.2 C B
IB1 = IB2
T = 25°C td @ VBE(off) = 0 V
0.1 J
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

1.0
THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
0.5
r(t), EFFECTIVE TRANSIENT

0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RqJC(t) = r(t) RqJC
0.07 RqJC = 1.09°C/W MAX
0.02
0.05 D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN t1
0.03 0.01 READ TIME AT t1 t2
0.02 TJ(pk) - TC = P(pk) RqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

http://onsemi.com
3
 2N6284 (NPN); 2N6286, 2N6287 (PNP)

ACTIVE−REGION SAFE OPERATING AREA

50 There are two limitations on the power handling ability of
0.1 ms a transistor: average junction temperature and second
20 0.5 ms breakdown. Safe operating area curves indicate IC − VCE
IC, COLLECTOR CURRENT (AMP)
10
1.0 ms limits of the transistor that must be observed for reliable
5.0 operation; i.e. the transistor must not be subjected to greater
5.0 ms dissipation than the curves indicate.
2.0 dc
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
1.0 TJ = 200°C variable depending on conditions. Second breakdown pulse
0.5 limits are valid for duty cycles to 10% provided
SECOND BREAKDOWN LIMITED
TJ(pk) < 200_C. TJ(pk) may be calculated from the data in
0.2
BONDING WIRE LIMITED Figure 4. At high case temperatures, thermal limitations will
0.1 THERMAL LIMITATION @ TC = 25°C
reduce the power that can be handled to values less than the
SINGLE PULSE
0.05
2.0 5.0 10 20 50 100
limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. 2N6284, 2N6287

10,000
TJ = 25°C
hFE, SMALL-SIGNAL CURRENT GAIN

5000
VCE = 3.0 Vdc
2000 IC = 10 A
1000
500

200
100

50
2N6284 (NPN)
20 2N6287 (PNP)
10
1.0 2.0 5.0 10 20 50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 6. Small−Signal Current Gain

1000
TJ = 25°C
700
C, CAPACITANCE (PF)

500

300 Cib

Cob
200

2N6284 (NPN)
2N6287 (PNP)
100
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

http://onsemi.com
4
 2N6284 (NPN); 2N6286, 2N6287 (PNP)

NPN PNP
2N6284 2N6287

20,000 30,000
VCE = 3.0 V 20,000 VCE = 3.0 V
10,000
TJ = 150°C
7000 TJ = 150°C 10,000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

5000 7000
5000
3000 25°C
2000 25°C 3000
2000
1000
-55°C -55°C
700 1000
500 700
300 500
200 300
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C

2.6 IC = 5.0 A 10 A 15 A 2.6 15 A

IC = 5.0 A 10 A

2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C

2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

VBE(sat) @ IC/IB = 250

1.5 1.5 VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V VBE @ VCE = 3.0 V

1.0 1.0
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250
0.5 0.5
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

http://onsemi.com
5
 2N6284 (NPN); 2N6286, 2N6287 (PNP)

NPN PNP
2N6284 2N6287

+5.0 +5.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+4.0 hFE@VCE + 3.0V +4.0 hFE@VCE + 3.0V
*APPLIES FOR IC/IB ≤ *APPLIES FOR IC/IB ≤
+3.0 250 +3.0 250

+2.0 +2.0 25°C to 150°C

25°C to 150°C
+1.0 +1.0
-55°C to + 25°C
0 -55°C to + 25°C 0
-1.0 *qVC for VCE(sat) -1.0 *qVC for VCE(sat)
-2.0 -2.0
25°C to + 150°C 25°C to + 150°C
-3.0 -3.0 qVB for VBE
qVB for VBE
-4.0 -55°C to + 25°C -4.0 -55°C to + 25°C
-5.0 -5.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients

105 103
VCE = 30 V VCE = 30 V
104 102
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

μ

TJ = 150°C
103 101
TJ = 150°C
102 100 100°C
100°C

101 10-1
REVERSE FORWARD REVERSE FORWARD
100 10-2 25°C
25°C
10-1 10-3
-0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region

COLLECTOR COLLECTOR
NPN PNP
2N6284 2N6287

BASE BASE

[ 8.0 k [ 60 [ 8.0 k [ 60

EMITTER EMITTER

Figure 13. Darlington Schematic

http://onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z DATE 05/18/1988

SCALE 1:1

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U
L −Y− E 0.055 0.070 1.40 1.77
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77

0.13 (0.005) M T Y M

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. BASE PIN 1. BASE PIN 1. GATE PIN 1. GROUND PIN 1. CATHODE
2. EMITTER 2. COLLECTOR 2. SOURCE 2. INPUT 2. EXTERNAL TRIP/DELAY
CASE: COLLECTOR CASE: EMITTER CASE: DRAIN CASE: OUTPUT CASE: ANODE

STYLE 6: STYLE 7: STYLE 8: STYLE 9:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE #1 PIN 1. ANODE #1
2. EMITTER 2. OPEN 2. CATHODE #2 2. ANODE #2
CASE: COLLECTOR CASE: CATHODE CASE: ANODE CASE: CATHODE

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

© Semiconductor Components Industries, LLC, 2000 1 Case Outline Number:

January, 2000 − Rev. 07Z 1
 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: TECHNICAL SUPPORT
Email Requests to: orderlit@onsemi.com North American Technical Support: Europe, Middle East and Africa Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910
onsemi Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative