2N5550, 2N5551

Preferred Device

Amplifier Transistors
NPN Silicon

Features
PbFree Packages are Available* http://onsemi.com
Device Marking: Device Type, e.g., 2N5550, Date Code
COLLECTOR
3

2
BASE
MAXIMUM RATINGS
Rating Symbol 2N5550 2N5551 Unit 1
EMITTER
Collector Emitter Voltage VCEO 140 160 Vdc
Collector Base Voltage VCBO 160 180 Vdc
Emitter Base Voltage VEBO 6.0 Vdc
MARKING
Collector Current Continuous IC 600 mAdc DIAGRAM
Total Device Dissipation PD
@ TA = 25C 625 mW
Derate above 25C 5.0 mW/C 2N
TO92
55xx
CASE 29
Total Device Dissipation PD YWW
12 STYLE 1
@ TC = 25C 1.5 W
3
Derate above 25C 12 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range
55xx Specific Device Code
Maximum ratings are those values beyond which device damage can occur. Y = Year
Maximum ratings applied to the device are individual stress limit values (not WW = Work Week
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Characteristic Symbol Max Unit
Thermal Resistance, RJA 200 C/W
JunctiontoAmbient Preferred devices are recommended choices for future use
and best overall value.
Thermal Resistance, RJC 83.3 C/W
JunctiontoCase

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

June, 2004 Rev. 3 2N5550/D
 2N5550, 2N5551

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N5550 140
2N5551 160
CollectorBase Breakdown Voltage V(BR)CBO Vdc
(IC = 100 Adc, IE = 0 ) 2N5550 160
2N5551 180
EmitterBase Breakdown Voltage V(BR)EBO 6.0 Vdc
(IE = 10 Adc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 100 Vdc, IE = 0) 2N5550 100 nAdc
(VCB = 120 Vdc, IE = 0) 2N5551 50
(VCB = 100 Vdc, IE = 0, TA = 100C) 2N5550 100 Adc
(VCB = 120 Vdc, IE = 0, TA = 100C) 2N5551 50
Emitter Cutoff Current IEBO 50 nAdc
(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)
DC Current Gain hFE
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550 60
2N5551 80

(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 60 250

2N5551 80 250

(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 20

2N5551 30
CollectorEmitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types 0.15

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 0.25

2N5551 0.20
BaseEmitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types 1.0

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 1.2

2N5551 1.0
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product fT 100 300 MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance Cobo 6.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550 30
2N5551 20
SmallSignal Current Gain hfe 50 200
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure NF dB
(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k
, 2N5550 10
f = 1.0 kHz) 2N5551 8.0
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

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 2N5550, 2N5551

ORDERING INFORMATION
Device Package Shipping
2N5550 TO92 5,000 Unit / Bulk
2N5550RLRA TO92 2,000 Tape & Reel
2N5550RLRP TO92 2,000 Tape & Ammo Box
2N5550RLRPG TO92 2,000 Tape & Ammo Box
(PbFree)

2N5551 TO92 5,000 Unit / Bulk

2N5551G TO92 5,000 Unit / Bulk
(PbFree)

2N5551RL1 TO92 2,000 Tape & Reel

2N5551RLRA TO92 2,000 Tape & Reel
2N5551RLRM TO92 2,000 Tape & Ammo Box
2N5551RLRP TO92 2,000 Tape & Ammo Box
2N55551ZL1 TO92 2,000 Tape & Ammo Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.

500
300 VCE = 1.0 V
TJ = 125C
200 VCE = 5.0 V
h FE, DC CURRENT GAIN

25C
100

55 C
50
30
20

10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

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 2N5550, 2N5551

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

101
VCE = 30 V
100
IC, COLLECTOR CURRENT (A)

101 TJ = 125C
IC = ICES

102 75C

103 REVERSE FORWARD

25C
104

105
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 3. Collector CutOff Region

1.0 2.5
TJ = 25C
V, TEMPERATURE COEFFICIENT (mV/C)

2.0 TJ = 55C to +135C

0.8 1.5
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10 1.0

0.6 0.5 VC for VCE(sat)
0
0.4 0.5
1.0
VB for VBE(sat)
0.2 1.5
VCE(sat) @ IC/IB = 10 2.0
0 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. On Voltages Figure 5. Temperature Coefficients

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 2N5550, 2N5551

100
70 TJ = 25C
50
30
VBB VCC

C, CAPACITANCE (pF)
10.2 V

8.8 V 30 V 20
Vin
100 3.0 k RC 10
0.25 F Cibo
10 s RB 7.0
INPUT PULSE Vout 5.0
5.1 k
3.0 Cobo
tr, tf 10 ns Vin 100 1N914
DUTY CYCLE = 1.0% 2.0

1.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
Values Shown are for IC @ 10 mA
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit Figure 7. Capacitances

1000 5000
IC/IB = 10 tf @ VCC = 120 V IC/IB = 10
3000
500 TJ = 25C TJ = 25C
2000
300 tr @ VCC = 120 V tf @ VCC = 30 V
200 1000
tr @ VCC = 30 V
t, TIME (ns)

t, TIME (ns)

100 500

300 ts @ VCC = 120 V

50 td @ VEB(off) = 1.0 V
200
30 VCC = 120 V
20 100

10 50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 8. TurnOn Time Figure 9. TurnOff Time

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 2N5550, 2N5551

PACKAGE DIMENSIONS

TO92
TO226AA
CASE 2911
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 12.70
L 0.250 6.35
V C N 0.080 0.105 2.04 2.66
P 0.100 2.54
SECTION XX
1 R 0.115 2.93
N V 0.135 3.43
N STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
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