MOTOROLA

SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5550/D

Amplifier Transistors
2N5550
NPN Silicon
2N5551 *

*Motorola Preferred Device

COLLECTOR
3

2
BASE

1
EMITTER
1
23
MAXIMUM RATINGS
Rating Symbol 2N5550 2N5551 Unit CASE 29-04, STYLE 1
Collector -Emitter Voltage VCEO 140 160 Vdc TO-92 (TO-226AA)
Collector -Base Voltage VCBO 160 180 Vdc
Emitter -Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 600 mAdc

Total Device Dissipation @ TA = 25C PD 625 mW

Derate above 25C 5.0 mW/C

Total Device Dissipation @ TC = 25C PD 1.5 Watts

Derate above 25C 12 mW/C

Operating and Storage Junction TJ, Tstg -55 to +150 C

Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junction to Case RqJC 83.3 C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector -Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N5550 140 —
2N5551 160 —
Collector -Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 Adc, IE = 0 ) 2N5550 160 —
2N5551 180 —
Emitter -Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 Adc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 100 Vdc, IE = 0) 2N5550 — 100 nAdc
(VCB = 120 Vdc, IE = 0) 2N5551 — 50
(VCB = 100 Vdc, IE = 0, TA = 100C) 2N5550 — 100 Adc
(VCB = 120 Vdc, IE = 0, TA = 100C) 2N5551 — 50
Emitter Cutoff Current IEBO — 50 nAdc
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small-Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
2N5550 2N5551

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550 60 —
2N5551 80 —

(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 60 250

2N5551 80 250

(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 20 —

2N5551 30 —
Collector -Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 0.15

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 0.25

2N5551 — 0.20
Base -Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 1.0

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 1.2

2N5551 — 1.0

SMALL-SIGNAL CHARACTERISTICS
Current -Gain — Bandwidth Product fT 100 300 MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance Cobo — 6.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550 — 30
2N5551 — 20
Small-Signal Current Gain hfe 50 200 —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure NF dB
(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, 2N5550 — 10
f = 1.0 kHz) 2N5551 — 8.0

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2 Motorola Small-Signal Transistors, FETs and Diodes Device Data

 2N5550 2N5551

500

300 V
T
J = 125C CE = 1.0 V
V
200 25C CE = 5.0 V
100
– 55C
50

30

20

10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I C, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

1.0
0.9

0.8

0.7
I C = 1.0 mA 10 mA 30 mA 100 mA
0.6

0.5

0.4

0.3

0.2

0.1

0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
I B, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

Motorola Small-Signal Transistors, FETs and Diodes Device Data 3

2N5550 2N5551

101
VCE = 30 V
100

T J = 125C
10-1 I C = ICES

10-2 75C

REVERSE FORWARD
10-3

25C
10-4

10-5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
V BE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Cut-Off Region

1.0 2.5
T J = 25C
2.0 T
J = - 55C to +135C
0.8 1.5

V 1.0
BE(sat) @ IC/IB = 10
0.6 0.5 qVC for VCE(sat)
0

0.4 -0.5

-1.0
qVB for VBE(sat)
0.2 -1.5
V CE(sat) @ IC/IB = 10 -2.0

0 -2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I C, COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages Figure 5. Temperature Coefficients

100
70 T
J = 25C
50
30
10.2 V V BB V CC
-8.8 V 30 V 20
V in
100 3.0 k RC 10

10 s 0.25 F 7.0 C ibo

RB
INPUT PULSE V out 5.0
5.1 k
3.0 C obo
t r, tf  10 ns V in 100 1N914
DUTY CYCLE = 1.0% 2.0

1.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
Values Shown are for IC @ 10 mA
V R, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit Figure 7. Capacitances

4 Motorola Small-Signal Transistors, FETs and Diodes Device Data

 2N5550 2N5551

1000 5000
I C/IB = 10 t I C/IB = 10
500 3000 f @ VCC = 120 V
T J = 25C T J = 25C
2000
300 t r @ VCC = 120 V t f @ VCC = 30 V
200
t r @ VCC = 30 V 1000

100 500

300 t
50 t d @ VEB(off) = 1.0 V
s @ VCC = 120 V
200
30 V
CC = 120 V
20 100

10 50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA)

Figure 8. Turn-On Time Figure 9. Turn-Off Time

Motorola Small-Signal Transistors, FETs and Diodes Device Data 5

2N5550 2N5551

PACKAGE DIMENSIONS

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
SEATING L
PLANE F
K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
X X
J D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
H G G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
V SECTION X-X J 0.015 0.020 0.39 0.50
C K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
1
N 0.080 0.105 2.04 2.66
N P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
N V 0.135 --- 3.43 ---

STYLE 1:
CASE 029-04 PIN 1. EMITTER

(TO-226AA) 2.
3.
BASE
COLLECTOR
ISSUE AD

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6 Motorola Small-Signal Transistors, FETs and Diodes Device Data

 2N5550/D
*2N5550/D*
This datasheet has been download from:

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