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SEMICONDUCTOR TECHNICAL DATA by 2N6515/D

  



COLLECTOR COLLECTOR 

3 3

2
BASE
2
BASE

NPN PNP 
1 1
EMITTER EMITTER Voltage and current are negative
for PNP transistors

MAXIMUM RATINGS
*Motorola Preferred Device
2N6516 2N6517
Rating Symbol 2N6515 2N6519 2N6520 Unit
Collector – Emitter Voltage VCEO 250 300 350 Vdc
Collector – Base Voltage VCBO 250 300 350 Vdc
Emitter – Base Voltage VEBO Vdc
2N6515, 2N6516, 2N6517 6.0
2N6519, 2N6520 5.0
Base Current IB 250 mAdc
1
2
Collector Current — Continuous IC 500 mAdc 3

Total Device Dissipation PD 625 mW

@ TA = 25°C 5.0 mW/°C CASE 29–04, STYLE 1
Derate above 25°C TO–92 (TO–226AA)

Total Device Dissipation PD 1.5 Watts

@ TC = 25°C 12 mW/°C
Derate above 25°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N6515 250 —
2N6516, 2N6519 300 —
2N6517, 2N6520 350 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0 ) 2N6515 250 —
2N6516, 2N6519 300 —
2N6517, 2N6520 350 —
Emitter – Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 µAdc, IC = 0) 2N6515, 2N6516, 2N6517 6.0 —
2N6519, 2N6520 5.0 —

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996

    

   
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current ICBO nAdc
(VCB = 150 Vdc, IE = 0) 2N6515 — 50
(VCB = 200 Vdc, IE = 0) 2N6516, 2N6519 — 50
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520 — 50
Emitter Cutoff Current IEBO nAdc
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6516, 2N6517 — 50
(VEB = 4.0 Vdc, IC = 0) 2N6519, 2N6520 — 50

ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515 35 —
2N6516, 2N6519 30 —
2N6517, 2N6520 20 —

(IC = 10 mAdc, VCE = 10 Vdc) 2N6515 50 —

2N6516, 2N6519 45 —
2N6517, 2N6520 30 —

(IC = 30 mAdc, VCE = 10 Vdc) 2N6515 50 300

2N6516, 2N6519 45 270
2N6517, 2N6520 30 200

(IC = 50 mAdc, VCE = 10 Vdc) 2N6515 45 220

2N6516, 2N6519 40 200
2N6517, 2N6520 20 200

(IC = 100 mAdc, VCE = 10 Vdc) 2N6515 25 —

2N6516, 2N6519 20 —
2N6517, 2N6520 15 —
Collector – Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.30
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.35
(IC = 30 mAdc, IB = 3.0 mAdc) — 0.50
(IC = 50 mAdc, IB = 5.0 mAdc) — 1.0
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.75
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.85
(IC = 30 mAdc, IB = 3.0 mAdc) — 0.90
Base–Emitter On Voltage VBE(on) — 2.0 Vdc
(IC = 100 mAdc, VCE = 10 Vdc)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product(1) fT 40 200 MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector–Base Capacitance Ccb — 6.0 pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance Ceb pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515 thru 2N6517 — 80
2N6519, 2N6520 — 100

SWITCHING CHARACTERISTICS
Turn–On Time ton — 200 µs
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
Turn–Off Time toff — 3.5 µs
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


    

   
NPN PNP

2N6515, 2N6516 2N6519

200 200
VCE = 10 V TJ = 125°C VCE = –10 V TJ = 125°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

25°C
100 25°C 100

70 70 – 55°C
– 55°C
50 50

30 30

20 20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

2N6517 2N6520
200 200
VCE = 10 V TJ = 125°C VCE = –10 V
TJ = 125°C
100 100
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

25°C 25°C
70 70
– 55°C
50 50

– 55°C
30 30

20 20

10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

2N6515, 2N6516, 2N6517 2N6519, 2N6520

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 100

70 70

50 50

TJ = 25°C TJ = 25°C
30 VCE = 20 V 30 VCE = – 20 V
f = 20 MHz f = 20 MHz
20 20

10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Current–Gain — Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3


    

   
NPN PNP

2N6515, 2N6516, 2N6517 2N6519, 2N6520

1.4 –1.4
TJ = 25°C
1.2 –1.2 TJ = 25°C

1.0 –1.0
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)
0.8 VBE(sat) @ IC/IB = 10 –0.8 VBE(sat) @ IC/IB = 10

0.6 –0.6 VBE(on) @ VCE = –10 V

VBE(on) @ VCE = 10 V
0.4 –0.4

0.2 VCE(sat) @ IC/IB = 10 –0.2 VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0 VCE(sat) @ IC/IB = 5.0
0 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

2N6515, 2N6516, 2N6517 2N6519, 2N6520

2.5 2.5
RθV, TEMPERATURE COEFFICIENTS (mV/°C)

+ 10 RθV, TEMPERATURE COEFFICIENTS (mV/°C) + 10

IC IC
2.0 2.0
IB IB
1.5 1.5
1.0 25°C to 125°C 1.0 25°C to 125°C
0.5 0.5 RθVB for VBE
RθVC for VCE(sat)
0 0 – 55°C to 25°C
– 55°C to 25°C
– 0.5 – 0.5
– 1.0 – 1.0
– 55°C to 125°C
– 1.5 – 1.5 RθVC for VCE(sat)
RθVB for VBE – 55°C to 125°C
– 2.0 – 2.0
– 2.5 – 2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

2N6515, 2N6516, 2N6517 2N6519, 2N6520

100 100
70 TJ = 25°C 70 Ceb TJ = 25°C
50 50
Ceb
30 30
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)

20 20

10 10
7.0 7.0 Ccb
5.0 Ccb 5.0
3.0 3.0
2.0 2.0

1.0 1.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 – 0.2 – 0.5 – 1.0 – 2.0 – 5.0 – 10 – 20 – 50 – 100 – 200
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data


    

   
NPN PNP

2N6515, 2N6516, 2N6517 2N6519, 2N6520

1.0 k 1.0 k
700 700
VCE(off) = 100 V td @ VBE(off) = 2.0 V VCE(off) = –100 V
500 IC/IB = 5.0 500 IC/IB = 5.0
td @ VBE(off) = 2.0 V
300 TJ = 25°C 300 TJ = 25°C
200 200 tr
t, TIME (ns)

t, TIME (ns)
tr
100 100
70 70
50 50
30 30
20 20

10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Turn–On Time

2N6515, 2N6516, 2N6517 2N6519, 2N6520

10 k 2.0 k
7.0 k ts
5.0 k ts 1.0 k
700
3.0 k
500 tf
2.0 k VCE(off) = –100 V
t, TIME (ns)

VCE(off) = 100 V 300

IC/IB = 5.0
1.0 k tf IC/IB = 5.0 200 IB1 = IB2
700 IB1 = IB2 TJ = 25°C
500 TJ = 25°C 100
300 70
50
200
30
100 20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 8. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5


    

   
+VCC

VCC ADJUSTED 2.2 k

FOR VCE(off) = 100 V 20 k
+10.8 V 50 Ω SAMPLING SCOPE
1.0 k
50

–9.2 V 1/2MSD7000

PULSE WIDTH ≈ 100 µs

tr, tf ≤ 5.0 ns APPROXIMATELY
DUTY CYCLE ≤ 1.0% –1.35 V (ADJUST FOR V(BE)off = 2.0 V)
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES

Figure 9. Switching Time Test Circuit

1.0
0.7
0.5 D = 0.5
RESISTANCE (NORMALIZED)

0.2
r(t), TRANSIENT THERMAL

0.3
0.2
0.05 SINGLE PULSE
0.1
0.1
0.07 SINGLE PULSE
0.05
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
0.03
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 10. Thermal Response

500 FIGURE A
100 µs 10 µs
TA = 25°C
IC, COLLECTOR CURRENT (mA)

200 tP
100 TC = 25°C 1.0 ms
PP PP
50 100 ms
20
CURRENT LIMIT
10
THERMAL LIMIT
5.0 (PULSE CURVES @ TC = 25°C) t1
SECOND BREAKDOWN LIMIT
2.0
CURVES APPLY 2N6515 1/f
1.0 2N6516, 2N6519
0.5
BELOW RATED VCEO 2N6517, 2N6520 DUTY CYCLE + t1 f + ttP1
0.5 1.0 2.0 5.0 10 20 50 100 200 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP

Figure 11. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data

6 Motorola Small–Signal Transistors, FETs and Diodes Device Data


    

   
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

Motorola Small–Signal Transistors, FETs and Diodes Device Data 7


    

   

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8 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 
◊ 2N6515/D