MJE15028, MJE15030 (NPN),

MJE15029, MJE15031 (PNP)

Complementary Silicon
MJE15030 - NPN 8A 150V 50W TO-220
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.

Features
8 AMPERE
• High Current Gain − Bandwidth Product POWER TRANSISTORS
• TO−220 Compact Package COMPLEMENTARY SILICON
• These Devices are Pb−Free and are RoHS Compliant* 120−150 VOLTS, 50 WATTS
MAXIMUM RATINGS
PNP NPN
Rating Symbol Value Unit
COLLECTOR COLLECTOR
Collector−Emitter Voltage VCEO Vdc 2,4 2,4
MJE15028G, MJE15029G 120
MJE15030G, MJE15031G 150
Collector−Base Voltage VCB Vdc 1 1
MJE15028G, MJE15029G 120 BASE BASE
MJE15030G, MJE15031G 150
Emitter−Base Voltage VEB 5.0 Vdc 3 3
Collector Current − Continuous IC 8.0 Adc EMITTER EMITTER

Collector Current − Peak ICM 16 Adc 4

Base Current IB 2.0 Adc
Total Device Dissipation PD
@ TC = 25_C 50 W TO−220
Derate above 25°C 0.40 W/_C CASE 221A
Total Device Dissipation PD STYLE 1
@ TA = 25_C 2.0 W
Derate above 25°C 0.016 W/_C 1
2
Operating and Storage Junction TJ, Tstg −65 to +150 _C 3
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the MARKING DIAGRAM
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit MJE150xxG
Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W AY WW
Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

MJE150xx = Device Code

x = 28, 29, 30, or 31
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

*For additional information on our Pb−Free strategy and soldering details, please ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package
Reference Manual, SOLDERRM/D. dimensions section on page 5 of this data sheet.

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 MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 10 mAdc, IB = 0)
MJE15028, MJE15029 120 −
MJE15030, MJE15031 150 −
Collector Cutoff Current ICEO mAdc
(VCE = 120 Vdc, IB = 0)
MJE15028, MJE15029 − 0.1
(VCE = 150 Vdc, IB = 0)
MJE15030, MJE15031 − 0.1
Collector Cutoff Current ICBO mAdc
(VCB = 120 Vdc, IE = 0)
MJE15028, MJE15029 − 10
(VCB = 150 Vdc, IE = 0)
MJE15030, MJE15031 − 10
Emitter Cutoff Current IEBO mAdc
(VBE = 5.0 Vdc, IC = 0) − 10

ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 0.1 Adc, VCE = 2.0 Vdc) 40 −
(IC = 2.0 Adc, VCE = 2.0 Vdc) 40 −
(IC = 3.0 Adc, VCE = 2.0 Vdc) 40 −
(IC = 4.0 Adc, VCE = 2.0 Vdc) 20 −
DC Current Gain Linearity hFE Typ
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) 2
(NPN to PNP) 3
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 1.0 Adc, IB = 0.1 Adc) − 0.5

Base−Emitter On Voltage VBE(on) Vdc

(IC = 1.0 Adc, VCE = 2.0 Vdc) − 1.0

DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2) fT MHz
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) 30 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.

TA TC
PD, POWER DISSIPATION (WATTS)

3.0 60

2.0 40

TC

1.0 20 TA

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

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 MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 2. Thermal Response

20 There are two limitations on the power handling ability of

16
10 100 ms a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC − VCE

5ms limits of the transistor that must be observed for reliable
dc operation, i.e., the transistor must not be subjected to greater
1.0 dissipation then the curves indicate.
BONDING WIRE LIMITED The data of Figures 3 and 4 is based on T J(pk) = 150_C;
THERMALLY LIMITED TC is variable depending on conditions. Second breakdown
SECOND BREAKDOWN pulse limits are valid for duty cycles to 10% provided TJ(pk)
0.1 LIMITED @ TC = 25°C < 150_C. TJ(pk) may be calculated from the data in Figure 2.
MJE15028
MJE15029 At high case temperatures, thermal limitations will reduce
MJE15030 the power that can be handled to values less than the
MJE15031
0.02 limitations imposed by second breakdown.
2.0 5.0 10 20 50 120 150
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Forward Bias Safe Operating Area

8.0 1000

500 Cib (NPN)

IC, COLLECTOR CURRENT (AMP)

Cib (PNP)
C, CAPACITANCE (pF)

5.0 200

IC/IB = 10
TC = 25°C 100 Cob (PNP)
3.0 50
VBE(off) = 9 V
2.0 5V 30 Cob (NPN)
3V 20
1.0
1.5 V
0 0V 10
0 100 110 120 130 140 150 1.5 3.0 5.0 7.0 10 30 50 100 150
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Reverse−Bias Switching Figure 5. Capacitances

Safe Operating Area

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 MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

100 100
90 (PNP)
hfe , SMALL SIGNAL CURRENT GAIN

50
(NPN)
30 60
VCE = 10 V 50
20 IC = 0.5 A PNP
TC = 25°C
NPN
10
20
10
5.0 0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
f, FREQUENCY (MHz) IC, COLLECTOR CURRENT (AMP)

Figure 6. Small−Signal Current Gain Figure 7. Current Gain−Bandwidth Product

NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031

1K 1K
VCE = 2.0 V VCE = 2 V
500 500
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

TJ = 150°C TJ = 150°C
200 200
150
TJ = 25°C TJ = 25°C
100 100
70 TJ = -55°C
50 TJ = -55°C 50
30
20 20

10 10
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain

NPN PNP

TJ = 25°C 1.8 TJ = 25°C

1.6
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.4
1.2
1.0 1.0
VBE(sat) @ IC/IB = 10 0.8 VBE(sat) @ IC/IB = 10

0.6 VBE(on) @ VCE = 2.0 V VBE(on) @ VCE = 2.0 V

0.4
VCE(sat) = IC/IB = 20
0.2 VCE(sat) = IC/IB = 20
IC/IB = 10 IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltage

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 MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

1.0 10
VCC = 80 V VCC = 80 V
IC/IB = 10 5.0 IC/IB = 10, IB1 = IB2
0.5
TJ = 25°C ts (NPN) TJ = 25°C
3.0
0.2 tr (PNP) td (NPN, PNP) 2.0
t, TIME (s)

t, TIME (s)
μ

μ
ts (PNP)
0.1 1.0

0.05 0.5 tf (PNP)

0.03 tr (NPN)
0.02 0.2 tf (NPN)

0.01 0.1
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.3 0.5 2.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. Turn−On Times Figure 11. Turn−Off Times

ORDERING INFORMATION
Device Package Shipping
MJE15028G TO−220 50 Units / Rail
(Pb−Free)

MJE15029G TO−220 50 Units / Rail

(Pb−Free)

MJE15030G TO−220 50 Units / Rail

(Pb−Free)

MJE15031G TO−220 50 Units / Rail

(Pb−Free)

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 MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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