Module 1 PN Junction

Q1. Explain the formation of Depletion region in unbiased PN junction? (5m)

Ans: A P-N junction diode is a semiconductor material with one of its halves doped by P-
type impurity and the other half is doped by N- type impurities. The division or junction
between both the halves is called P-N junction. When P-N junction is formed, it has
holes in P- region and electrons in N- region. The number of holes is higher in P- region
(exists as majority carriers) than N- region (exists as minority carriers). In the same way,
the quantity of electrons in N- region (exists as majority carriers) is higher than P- region
(exists as minority carriers). The difference in density of carriers results in major carrier
diffusion. So that, holes diffuse from P to N region and electrons diffuse from N to P
region. The depletion layer is formed by the recombination of free or mobile holes and
electrons that produce a narrow layer. And the region is depleted of free or mobile
charge carriers. But it contains fixed and immobile charges. The production of ions is
because of the impurity atoms that have let electrons and holes behind by themselves
in an isolated state by having a charge that is opposite to the departed.

In the depletion region of an unbiased P-N junction diode there are only fixed or
immobile positive and negative atoms.

Note: As the depletion layer contains no free or mobile charge carriers but only fixed
and immobile ions, this layer (or region) behaves like an insulator. And due to the
presence of rows of fixed and immobile charges, it possesses capacitance.

Q3. Explain the working of PN junction diode and draw its VI characteristics? (5m)

Ans: At the instant of pn-junction formation, the free electrons near the junction in the n region
begin to diffuse across the junction into the p region where they combine with holes near the
junction. The result is that n region loses free electrons as they diffuse into the junction. This creates
a layer of positive charges (pentavalent ions) near the junction. As the electrons move across the
junction, the p region loses holes as the electrons and holes combine. The result is that there is a
layer of negative charges (trivalent ions) near the junction. These two layers of positive and negative
charges form the depletion region (or depletion layer). The term depletion is due to the fact that
near the junction, the region is depleted (i.e. emptied) of charge carries (free electrons and holes)
due to diffusion across the junction. It may be noted that depletion layer is formed very quickly and
is very thin compared to the n region and the p region.

Once pn junction is formed and depletion layer created, the diffusion of free electrons stops. in
other words, the depletion region acts as a barrier to the further movement of free electronsacross
the junction. The positive and negative charges set up an electric field. This is shown by a black
arrow  (ii). The electric field is a barrier to the free electrons in the n-region. There exists a potential
difference across the depletion layer and is called barrier potential.

V-I Characteristics of P-N Junction Diode

VI characteristics of P-N junction diodes is a curve between the voltage and current through the
circuit. Voltage is taken along the x-axis while the current is taken along the y-axis. The above
graph is the V-I characteristics curve of the P-N junction diode.

Q4. Draw a neat diagram and explain the operation of Bridge full wave rectifier. (5m)
Ans:

Operation of Full Wave Bridge Rectifier

When an AC supply is switched ON, the alternating voltage Vin appears across the terminals AB of the
secondary winding of the transformer which needs rectification. During the positive half cycle of the
secondary voltage, end A becomes positive, and end B becomes negative. The diodes D1 and D3 are
forward biased and the diodes D2 and D4 are reversed biased. Therefore, diode D1 and D3 conduct, and
diode D2 and D4 do not conduct. The current (i) flows through diode D1, load resistor RL (from M to
L), diode D3, and the transformer secondary. During the negative half-cycle, end A becomes negative
and end B positive. From the above diagram, it is seen that the diode D2 and D4 are under forward bias
and the diodes D1 and D3 are reverse bias. Therefore, diode D2 and D4 conduct while diodes D1 and
D3 do not conduct. Thus, current (i) flows through the diode D 2, load resistor RL (from M to L), diode
D4, and the transformer secondary.

The current flows through the load resistor RL in the same direction (M to L) during both the half
cycles. Hence, a DC output voltage Vout is obtained across the load resistor.

Q7. Draw and explain the V-I characteristics of a PN Junction Diode for forward and
reverse bias. (5m)
Ans:

VI characteristics of P-N junction diodes is a curve between the voltage and current through the
circuit. Voltage is taken along the x-axis while the current is taken along the y-axis. The above
graph is the V-I characteristics curve of the P-N junction diode.

Forward Bias
When the p-type is connected to the battery’s positive terminal and the n-type to the negative
terminal, then the P-N junction is said to be forward-biased. When the P-N junction is forward
biased, the built-in electric field at the P-N junction and the applied electric field are in opposite
directions. When both the electric fields add up, the resultant electric field has a magnitude
lesser than the built-in electric field. This results in a less resistive and thinner depletion region.
The depletion region’s resistance becomes negligible when the applied voltage is large. In silicon,
at the voltage of 0.6 V, the resistance of the depletion region becomes completely negligible, and
the current flows across it unimpeded.

Reverse Bias
When the p-type is connected to the battery’s negative terminal and the n-type is connected to
the positive side, the P-N junction is reverse biased. In this case, the built-in electric field and the
applied electric field are in the same direction. When the two fields are added, the resultant
electric field is in the same direction as the built-in electric field, creating a more resistive, thicker
depletion region. The depletion region becomes more resistive and thicker if the applied voltage
becomes larger.

Q8. Explain Full wave center tap Rectifier with the proper input output wave form. And derive the
formula for output Voltage and Current. (5m)

Ans: A centre tapped full wave rectifier is a type of rectifier that uses a centre tapped transformer
and two diodes to convert the complete AC signal into DC signal.
The circuit of the full wave rectifier can be constructed in two ways. The first method uses a
centre tapped transformer and two diodes. This arrangement is known as a centre tapped full
wave rectifier. The second method uses a standard transformer with four diodes arranged as a
bridge. This is known as a bridge rectifier. In the next section, we will restrict the discussion to
the centre tapped full wave rectifier only.

Q9. Explain Full wave bridge Rectifier with the proper input output wave form. And derive the
formula for output Voltage and Current. (5m)

Ans: The construction of a bridge rectifier is shown in the figure below. The bridge rectifier circuit
is made of four diodes D1, D2, D3, D4, and a load resistor RL. The four diodes are connected in a
closed-loop configuration to efficiently convert the alternating current (AC) into Direct Current
(DC). The main advantage of this configuration is the absence of the expensive centre-tapped
transformer. Therefore, the size and cost are reduced.
  
The input signal is applied across terminals A and B, and the output DC signal is obtained across
the load resistor RL connected between terminals C and D. The four diodes are arranged in such a
way that only two diodes conduct electricity during each half cycle. D 1 and D3 are pairs that
conduct electric current during the positive half cycle/. Likewise, diodes D 2 and D4 conduct
electric current during a negative half cycle.

Q10. Explain half wave center tap Rectifier with the proper input output wave form. And derive
the formula for output Voltage and Current.

Ans: A half-wave rectifier is the simplest form of the rectifier and requires only one diode for the
construction of a halfwave rectifier circuit.

A halfwave rectifier circuit consists of three main components as follows:

 A diode
  A transformer
 A resistive load

Working of Half Wave Rectifier

How a half-wave rectifier transforms AC into DC.

1. A high AC voltage is applied to the primary side of the step-down transformer. The
obtained secondary low voltage is applied to the diode.
2. The diode is forward biased during the positive half cycle of the AC voltage and reverse
biased during the negative half cycle.

Half Wave Rectifier Waveform

NOTE: REFER BELOW PHOTO FOR QUESTION 8,9,&10.