4: Basic Electronics

Q.1 Compare between intrinsic and extrinsic semiconductor.

Q.2
Q.3

Q.4

Working-
Photodiode is a two terminal semiconductor P-N junction device and is designed to operate with
reverse bias. A photodiode is a p-n junction or PIN structure. When a photon of sufficient energy
strikes the diode, it excites an electron, thereby creating a free electron (and a positively charged
electron hole).
When a reverse biased P-N junction is illuminated, the current flowing through it varies almost
linearly with light flux. The output voltage is taken from across a series connected load resistor R as
shown in above figure.
Applications of photodiode:
1. Photo diodes are used in consumer electronics devices such as compact disc players, smoke
detectors
2. The receivers for infrared remote control devices used to control equipment from televisions to air
conditioners.
3. Light measurement, as in camera light meters, or to respond to light levels, as in switching on street
lighting after dark.

Q.5 With the help of a neat diagram, explain working of PNP transistor.
Working :
The PNP Transistor has very similar characteristics to their NPN bipolar cousins, except that
the polarities (or biasing) of the current and voltage directions are reversed for any one of the
possible three configurations.
The voltage between the Base and Emitter ( V BE ), is now negative at the Base andpositive at the
Emitter because for a PNP transistor, the Base terminal is always biased negative with respect to the
Emitter.
Also the Emitter supply voltage is positive with respect to the Collector ( V CE ). So for a
PNP transistor to conduct the Emitter is always more positive with respect to both the Base
and the Collector.
The voltage sources are connected to a PNP transistor are as shown. This time the Emitter is
connected to the supply voltage VCC with the load resistor, RL which limits the maximum current
flowing through the device connected to the Collector terminal. The Base voltage V B which is biased
negative with respect to the Emitter and is connected to the Base resistor R B, which again is used to
limit the maximum Base current.
To cause the Base current to flow in a PNP transistor the Base needs to be more negative than the
Emitter (current must leave the base) by approx 0.7 volts for a silicon device or 0.3 volts for a
germanium device with the formulas used to calculate the Base resistor, Base current or Collector
current are the same as those used for an equivalent NPN transistor and is given as.
Q.6

Q.7
Q.8 What is mean by doping'' Draw energy band diagram for p-type semiconductor.

Doping :
Doping is the process of adding impurities to intrinsic semiconductors to alter their properties.
Normally Trivalent and Pentavalent elements are used to dope Silicon and Germanium.
Q.9

following path“ B-D3-RL-D4-A”.

 In both the cases load resistance conducts in the same direction as shown in the above
figure. Thus the ac signal gets converted into dc pulses.

Q.10Draw and describe the VI characteristic of P-N junction.

Construction of PN junction diode: -

A P-N junction is formed at the boundary between a p-type and n-type semiconductor created in a
single crystal of semiconductor by doping.
Working-
In forward bias, the p-type is connected with the positive terminal and the ntype is connected with the
negative terminal. With a battery connected this way, the holes in the P-type region and the electrons
in the N-type region are pushed toward the junction. This reduces the width of the depletion zone. The
positive charge applied to the P-type material repels the holes, while the negative charge applied to the
N-type material repels the electrons. As electrons and holes are pushed toward the junction, the
distance between them decreases.
This lowers the barrier in potential. With increasing forward bias voltage, the depletion zone
eventually becomes thin enough that the zone's electric field cannot counteract charge carrier motion
across the p–n junction, as a consequence reducing electrical resistance. The electrons that cross the p–
n junction into the P-type material (or holes that cross into the N-type material) will diffuse in the
near-neutral region. Therefore, the amount of minority diffusion in the near-neutral zones determines
the amount of current that may flow through the diode.
Reverse-bias usually refers to how a diode is used in a circuit. If a diode is reverse-biased, the voltage
at the cathode is higher than that at the anode. Therefore, no current will flow until the diode breaks
down. Connecting the P-type region to the negative terminal of the battery and the N-type region to
the positive terminal corresponds to reverse bias. Because the p-type material is now connected to the
negative terminal of the power supply, the 'holes' in the P-type material are pulled away from the
junction, causing the width of the depletion zone to increase. Likewise, because the N type region is
connected to the positive terminal, the electrons will also be pulled away from the junction. Therefore,
the depletion region widens, and does so increasingly with increasing reverse-bias voltage. This
increases the voltage barrier causing a high resistance to the flow of charge carriers, thus allowing
minimal electric current to cross the p–n junction. The increase in resistance of the p–n junction results
in the junction behaving as an insulator.

Q.11
Explanation : :-
Transistor is configured in common emitter mode to design a voltage Amplifier. Small ac input
Vin which is to be amplified is applied at the base of transistor. Emitter is common (ground) and
output is obtained at the collector of Q. As the transistor is NPN, +Vcc supply is applied as the
biasing voltage.
WORKING :-
 Resistors R1 & R2 form voltage divider biasing .
 R1, R2 & RE (emitter resistor) are used to bias the transistor in the active region, because
for operating the transistor as an amplifier it is necessary to bias it in the active region.
 Rc – collector resistor is used to control the collector current.
 Cc1 = Input coupling capacitor
 Cc2 = Output coupling capacitor
 Ce = Emitter bypass capacitor.
1. In the absence of ac input, IB=IBQ, IC = ICQ, VCE = VCEQ. The Q point is selected in the
active region of transistor.
2. As Vin is applied, the base current varies above and below IBQ .
3. Hence Ic =βIB varies above and below ICQ. Variation in Ic is large.
4. Therefore voltage across Rc varies. VRC = Ic x Rc.
5. Hence collector voltage Vc varies above and below VCEQ
As Vc = Vcc- Ic .Rc.
6. Through C out only the ac part of Vc is coupled to the load. Vo is of same
shape as Vin but of larger size.
Thus amplification has taken place. Vo is also 180 degree phase shifted
with Vin.

Q.12 Describe the working of LED with neat diagram

Working of LED (LED- Light Emitting Diode ) :
 When it is forward bias, it emits visible light. The electrons are in the higher conduction band
on the N-side, where holes are are in the lower valence band on p- side.
 When forward biased electrons recombine with the holes. During recombination energy is
emitted in form of light.
 GaAs, GaP, GaAsP are used to get visible light.( GaAS- Infrared radiation, GaP- Red or green,
GaAsP- Red or yellow Colors of the emitted light depend on the type of material used.

Q.13

Q.14

Q.15 (ii) Draw symbol of Diode and Zener diode.

Q.16

Q.17
Q.18
Q.19

Explanation:-
When the anode is made +ve w.r.t. cathode, the junctions J1 and J3 are forward biased, whereas
junction J2 is reverse biased. Due to this reverse biased junction J2, only small leakage current flows
from anode to cathode. The S.C.R. is then said to be in forward blocking state.
With anode +ve w.r.t. cathode, if anode-to-cathode voltage is increased to a sufficient large value, the
reverse biased junction J2 will break. The voltage at which it occurs is called forward break over
voltage VBO. The junctions J1 and J3 are already forward biased, hence results in free movement of
carriers across all three junctions, resulting in large forward anode current. The S.C.R. is said to be in
conducting state.
Without breakdown of junction J2, S.C.R. can be made ON by applying +ve voltage to gate w.r.t.
cathode. Due to this, junction J3 is forward biased and conducts and gate current flows. Free
movement of carriers (holes and electrons) across the junction J3 results in injection of holes into n-
region and electrons into p-region.
The injected electrons in p-region force this p-region to lose its identity as p-region because it was
having holes as majority carriers but with injected electrons, it is having holes as well as electrons in
majority. Therefore junction J2 now has majority electrons on both side and it is disappeared and
S.C.R. is made ON.
(1) Holding current : ( 1 Marks)
It is the minimum anode current required to maintain SCR in the on state.
(2) Latching current: ( 1 Marks)
It is the minimum anode current required to maintain SCR in the on state immediately
after gate pulse is removed and SCR is turned on.