Rangkaian Elektronik 2

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Data Sheet J-FET MPF102 Dan Diode 1N914

I Made Widyaputra

2 D4 TA
1210191027

Zainal Muludi

15 November 2020
 1N914
Vishay Semiconductors
Fast Switching Diodes

e2
Features
• Fast switching speed
• High reliability
• High conductance
• For general purpose switching applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC 94 9367 and WEEE 2002/96/EC

Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box

Parts Table
Part Ordering code Type Marking Remarks

1N914 1N914-TR or 1N914-TAP 1N914 Tape and Reel/Ammopack

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Non repetitive peak reverse VRM 100 V
voltage
Repetitive peak reverse VRRM 75 V
voltage
Working peak reverse voltage VRWM 75 V

DC blocking voltage VR 75 V

RMS Reverse voltage VR(RMS) 53 V

Forward continuous current IF 300 mA

Average rectified current half wave rectification with IFAV 200 mA

resistive load and f > 50 MHz
Non repetitive peak forward t = 1s IFSM 1 A
surge current
t = 1µs IFSM 4 A

Power dissipation I = 4 mm, T L = 25 °C Ptot 500 mW

Thermal Characteristics
Tamb = 25 °C unless otherwise specified
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air I = 4 mm, T L = constant RthJA 300 K/W
 Junction temperature Tj + 175 °C

Storage temperature range Tstg - 65 to + 175 °C

Document Number 85622 www.vishay.com

Rev. 1.7, 16-Feb-07 1

1N914
Vishay Semiconductors

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 10 mA VF 1000 mV

Breakdown voltage IR = 100 µA V(BR) 100 V

Peak reverse current VR = 75V IR 5 µA

VR = 20V, Tj = 150 °C IR 50 µA

VR = 20V IR 25 nA

Diode capacitance VR = 0, f = 1MHz CD 4 pF

Reverse recovery time IF = 10 mA to IR = 1 mA, trr 4 ns

VR = 6 V, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified

1000 1000

1N914

100 Tj = 25 °C
100
Scattering Limit
10
Scattering Limit
10
1

T j = 25 °C
0.1 1
0 0.4 0.8 1.2 1.6 2.0 1 10 100
94 9170_1 V F - Forward Voltage (V) 94 9098 VR - Reverse Voltage (V)

Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO35

Cathode Identification
 1N914
Vishay Semiconductors

26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024)

Rev. 6 - Date: 29.January 2007

Document no.: 6.560-5004.02-4
94 9366

www.vishay.com Document Number 85622

2 Rev. 1.7, 16-Feb-07

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public,
as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London
Amendmentsrespectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the
EnvironmentalProtection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do
 SEMICONDUCTOR TECHNICAL DATA by MPF102/D

N–Channel — Depletion
1 DRAIN
2 SOURCE
MAXIMUM RATINGS 3
GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Rating Symbol Value Unit

Drain–Source Voltage VDS 25 Vdc

Drain–Gate Voltage VDG 25 Vdc

Gate–Source Voltage VGS –25 Vdc

Gate Current IG 10 mAdc

PD 350 mW
Total Device Dissipation @ T A = 25°C
2.8 mW/°C
Derate above 25°C
Junction Temperature Range TJ 125 °C

Storage Temperature Range Tstg –65 to +150 °C

Gate–Source Breakdown Voltage V(BR)GSS –25 — Vdc

(IG = –10 µAdc, VDS = 0)
 Gate Reverse Current (VGS IGSS
= –15 Vdc, VDS = 0) nAdc
— –2.0
(VGS = –15 Vdc, VDS = 0, TA = 100°C) — –2.0 µAdc

Gate–Source Cutoff Voltage VGS(off) — –8.0 Vdc

(VDS = 15 Vdc, ID = 2.0 nAdc)

Gate–Source Voltage VGS –0.5 –7.5 Vdc

(VDS = 15 Vdc, ID = 0.2 mAdc)

ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1) IDSS 2.0 20 mAdc
(VDS = 15 Vdc, VGS = 0 Vdc)

SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1) yfs mhos
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2000 7500
(VDS = 15 Vdc, VGS = 0, f = 100 MHz) 1600 —

Input Admittance Re(yis) — 800 mhos

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Output Conductance Re(yos) — 200 mhos

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Input Capacitance Ciss — 7.0 pF

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance Crss — 3.0 pF

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%.

Motorola, Inc. 1997

POWER GAIN
24

f = 100 MHz
20

16

12 400MHz

8.0 Tchannel= 25°C

VDS= 15 Vdc
VGS= 0 V
4.0
0 2.0 4.0 6.0 8.0 10 12 14
ID, DRAIN CURRENT (mA)