FFPF20UP20DN 20 A, 200 V, Ultrafast Dual Diode

October 2005

FFPF20UP20DN
tm

Features 20 A, 200 V, Ultrafast Dual Diode

• Ultrafast Recovery trr = 45 ns (@ IF = 10 A)
• Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) The FFPF20UP20DN is an ultrafast dual diode with low forward
voltage drop and rugged UIS capability. This device is intended
• Reverse Voltage, VRRM = 200 V for use as freewheeling and clamping diodes in a variety of
• Avalanche Energy Rated switching power supplies and other power switching
applications. It is specially suited for use in switching power
• RoHS Compliant
supplies and industrial applicationa as welder and UPS
application.
Applications
• Output Rectifiers
• Switching Mode Power Supply
• Free-Wheeling Diode for Motor Application
• Power Switching Circuits

1 2 3

1 TO-220F 1. Anode 2. Cathode 3. Anode

1.Anode 2.Cathode 3.Anode

Absolute Maximum Ratings (per diode) Ta = 25°C unless otherwise noted

Symbol Parameter Value Unit

VRRM Peak Repetitive Reverse Voltage 200 V
VRWM Working Peak Reverse Voltage 200 V
VR DC Blocking Voltage 200 V
IF(AV) Average Rectified Forward Current @ TC = 115°C 10 A
IFSM Non-repetitive Peak Surge Current 100 A
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C

Thermal Characteristics T a = 25°C unless otherwise noted

Symbol Parameter Max Unit

RθJC Maximum Thermal Resistance, Junction to Case 4.3 °C/W

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FFPF20UP20DN Rev. A
 FFPF20UP20DN 20 A, 200 V, Ultrafast Dual Diode
Electrical Characteristics (per diode) Ta = 25°C unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit

VF * IF = 10 A TC = 25 °C - - 1.15 V
IF = 10 A TC = 150 °C - - 1.0 V
IR * VR = 200 V TC = 25 °C - - 100 µA
VR = 200 V TC = 150 °C - - 500 µA
trr IF = 1 A, di/dt = 100 A/µs, VCC = 30 V TC = 25 °C - - 35 ns
IF = 10 A, di/dt = 200 A/µs, VCC = 130 V TC = 25 °C - - 45 ns
ta IF =10 A, di/dt = 200 A/µs, VCC = 130 V TC = 25 °C - 15 - ns
tb TC = 25 °C - 12 - ns
Qrr TC = 25 °C - 36 - nC
WAVL Avalanche Energy (L = 20mH) 10 - - mJ
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%

©2005 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FFPF20UP20DN Rev. A
 FFPF20UP20DN 20 A, 200 V, Ultrafast Dual Diode
Typical Performance Characteristics

Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current

50 100

Reverse Current , I R [µA]

TC = 100 C 10
Forward Current , IF [A]

10 o
TC = 100 C
1

o
TC = 25 C
0.1
1

o
TC = 25 C
0.01

0.1 0.001
0.0 0.5 1.0 1.5 2.0 0 50 100 150 200

Forward Voltage , VF [V] Reverse Voltage , VR [V]

Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time

400 60
f = 1 MHz IF=10A
Reverse Recovery Time , trr [ns]
Capacitance , Cj [pF]

50
o
TC=125 C
100

40

30

o
TC=25 C

10 20
0.1 1 10 100 100 200 300 400 500

Reverse Voltage , VR [V] di/dt [A/µs]

Figure 5. Typical Reverse Recovery Current Figure 6. Forward Current Deration Curve
Average Rectified Forward Current, IF(AV) [A]

12 14
IF = 10A
Reverse Recovery Current , Irr [A]

10 12

10
8
DC
o 8
TC=125 C
6
6
4
o 4
TC=25 C
2
2

0 0
100 200 300 400 500 100 110 120 130 140 150

di/dt [A/µs] Case Temperature, TC [ C]

o

©2005 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FFPF20UP20DN Rev. A
 Package Demensions

FFPF20UP20DN 20 A, 200 V, Ultrafast Dual Diode

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

©2005 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FFPF20UP20DN Rev. A
 FFPF20UP20DN 20 A, 200 V, Ultrafast Dual Diode

©2005 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FFPF20UP20DN Rev. A
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