FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT

November 2013

FGA25N120ANTD
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
Description
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25C Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
• Low Switching Loss: Eoff, typ = 0.96 mJ and switching performances, high avalanche ruggedness and
@ IC = 25 A and TC = 25C
easy parallel operation. This device is well suited for the reso-
• Extremely Enhanced Avalanche Capability nant or soft switching application such as induction heating,
microwave oven.
Applications
• Induction Heating, Microwave Oven

TO-3P
G C E E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage  20 V
IC Collector Current @ TC = 25C 50 A
Collector Current @ TC = 100C 25 A
ICM (1) Pulsed Collector Current 90 A
Diode Continuous Forward Current @ TC = 25C 50 A
IF
Diode Continuous Forward Current @ TC = 100C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation @ TC = 25C 312 W
Maximum Power Dissipation @ TC = 100C 125 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
TL Maximum Lead Temp. for soldering 300 C
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.4 C/W
RJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.0 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGA25N120ANTDTU FGA25N120ANTD TO-3P Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 3 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 250 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 25 mA, VCE = VGE 3.5 5.5 7.5 V
VCE(sat) Collector to Emitter IC = 25 A, VGE = 15 V -- 2.0 -- V
Saturation Voltage
IC = 25 A, VGE = 15 V, -- 2.15 -- V
TC = 125C
IC = 50 A, VGE = 15 V -- 2.65 -- V

Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V, -- 3700 -- pF
f = 1 MHz
Coes Output Capacitance -- 130 -- pF
Cres Reverse Transfer Capacitance -- 80 -- pF

Switching Characteristics
td(on) Turn-On Delay Time VCC = 600 V, IC = 25 A, -- 50 -- ns
RG = 10 , VGE = 15 V,
tr Rise Time -- 60 -- ns
Inductive Load, TC = 25C
td(off) Turn-Off Delay Time -- 190 -- ns
tf Fall Time -- 100 -- ns
Eon Turn-On Switching Loss -- 4.1 -- mJ
Eoff Turn-Off Switching Loss -- 0.96 -- mJ
Ets Total Switching Loss -- 5.06 -- mJ
td(on) Turn-On Delay Time VCC = 600 V, IC = 25 A, -- 50 -- ns
RG = 10 , VGE = 15 V,
tr Rise Time -- 60 -- ns
Inductive Load, TC = 125C
td(off) Turn-Off Delay Time -- 200 -- ns
tf Fall Time -- 154 -- ns
Eon Turn-On Switching Loss -- 4.3 -- mJ
Eoff Turn-Off Switching Loss -- 1.5 -- mJ
Ets Total Switching Loss -- 5.8 -- mJ
Qg Total Gate Charge VCE = 600 V, IC = 25 A, -- 200 -- nC
VGE = 15 V
Qge Gate-Emitter Charge -- 15 -- nC
Qgc Gate-Collector Charge -- 100 -- nC

©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VFM Diode Forward Voltage IF = 25 A TC = 25C -- 2.0 3.0 V
TC = 125C -- 2.1 --
trr Diode Reverse Recovery Time IF = 25 A TC = 25C -- 235 350 ns
diF/dt = 200 A/s TC = 125C -- 300 --
Irr Diode Peak Reverse Recovery Cur- TC = 25C -- 27 40 A
rent
TC = 125C -- 31 --
Qrr Diode Reverse Recovery Charge TC = 25C -- 3130 4700 nC
TC = 125C -- 4650 --

©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
180 120
TC = 25C 20V 15V 12V
17V Common Emitter
160 VGE = 15V
10V
100
TC = 25C
140
TC = 125C
Collector Current, IC [A]

Collector Current, IC [A]

120 80
9V
100
60
80

60 8V 40

40
7V 20
20
VGE = 6V
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.0 20
Common Emitter Common Emitter
VGE = 15V TC = -40C
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

16

2.5
40A
12

8
IC = 25A
2.0
40A
4 25A
IC = 12.5A

1.5 0
25 50 75 100 125 0 4 8 12 16 20

Case Temperature, TC [C] Gate-Emitter Voltage, VGE [V]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25C TC = 125C
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

40A 40A
25A 25A
4 4
IC = 12.5A
IC = 12.5A
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate

Resistance
5000
Common Emitter
4500 VGE = 0V, f = 1MHz
Ciss
TC = 25C
4000
100
3500

Switching Time [ns]

Capacitance [pF]

3000 tr

2500
td(on)
2000

1500 Common Emitter

VCC = 600V, VGE = 15V
1000 IC = 25A
Coss TC = 25C
500
TC = 125C
Crss
0 10
1 10 0 10 20 30 40 50 60 70

Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ ]

Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
td(off) TC = 25C
10
TC = 125C
Switching Loss [mJ]
Switching Time [ns]

Eon

100
tf

Common Emitter
VCC = 600V, VGE = 15V Eoff
IC = 25A
1
TC = 25C
TC = 125C
10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

Gate Resistance, RG [ ] Gate Resistance, RG [ ]

Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current

Common Emitter
VGE = 15V, RG = 10
TC = 25C
TC = 125C
td(off)
tr
Switching Time [ns]

Switching Time [ns]

100

100
tf

td(on)

Common Emitter
VGE = 15V, RG = 10
TC = 25C
TC = 125C

10 20 30 40 50 10 20 30 40 50

Collector Current, IC [A] Collector Current, IC [A]

©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
16
Common Emitter Common Emitter
VGE = 15V, RG = 10 14 RL = 24
Eon
10 TC = 25C TC = 25C

Gate-Emitter Voltage, VGE [V]

TC = 125C 12
Vcc = 200V 600V
Switching Loss [mJ]

10 400V

Eoff
8

1
6

0.1 0
10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200

Collector Current, IC [A] Gate Charge, Qg [nC]

Figure 15. SOA Characteristics Figure 16. Turn-Off SOA

100
100 Ic MAX (Pulsed)
50s
Ic MAX (Continuous)
100s
Collector Current, Ic [A]

10
Collector Current, IC [A]

1ms

DC Operation
10
1

Single Nonrepetitive
0.1 Pulse TC = 25C
Curves must be derated
linearly with increase Safe Operating Area
in temperature VGE = 15V, TC = 125C
0.01 1
0.1 1 10 100 1000 1 10 100 1000
Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 17. Transient Thermal Impedance of IGBT

1

1
0

]
1

c
j
h
t
Z
[
e 0.5
s
n
0
.

o 0.2
p
s
e 0.1
R 0.05 Pdm
l
a
0
.
0
1

m 0.02 t1
r
e t2
h
T 0.01
Duty factor D = t1 / t2
single pulse Peak Tj = Pdm  Zthjc + TC
1
E
-
31
E
-
5

1
E
-
4

1
E
-
3

0
.
0
1

0
.
1

1
0
R
e
c
t
a
n
g
u
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a
r
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u
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a
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e
c
]

©2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current

50 30

diF/dt = 200A/s
25

Reverse Recovery Currnet , Irr [A]

10
Forward Current , IF [A]

20
TJ = 125C
15
diF/dt = 100A/s
1 TJ = 25C
10

5
TC = 125C
TC = 25C
0.1 0
0.0 0.4 0.8 1.2 1.6 2.0 5 10 15 20 25

Forward Voltage , VF [V] Forward Current , IF [A]

Figure 20. Stored Charge Figure 21. Reverse Recovery Time

4000
300

diF/dt = 100A/s
Stored Recovery Charge , Qrr [nC]

Reverse Recovery Time , trr [ns]

3000
diF/dt = 200A/s
200

2000 diF/dt = 200A/s

diF/dt = 100A/s
100
1000

0 0
5 10 15 20 25 5 10 15 20 25

Forward Current , IF [A] Forward Current , IF [A]

©2006 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
Mechanical Dimensions

Figure 22. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65

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©2006 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGA25N120ANTD Rev. C1
 FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
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Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

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Semiconductor. The datasheet is for reference information only.
Rev. I66

©2006 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGA25N120ANTD Rev. C1