FGH40N60UFD 600V, 40A Field Stop IGBT

April 2009

FGH40N60UFD tm
600V, 40A Field Stop IGBT
Features General Description
• High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A ries of Field Stop IGBTs offer the optimum performance for
• High input impedance Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
• Fast switching
• RoHS compliant

Applications
• Induction Heating, UPS, SMPS, PFC

E C
C
G

G
COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current @ TC = 25oC 120 A
IF Diode Continuous Forward Current @ TC = 25oC 40 A
Diode Continuous Forward Current @ TC = 100oC 20 A
IFM Diode Maximum Forward Current 80 A
o
Maximum Power Dissipation @ TC = 25 C 290 W
PD
Maximum Power Dissipation @ TC = 100oC 116 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 oC/W

o
RθJC(Diode) Thermal Resistance, Junction to Case - 1.45 C/W
oC/W
RθJA Thermal Resistance, Junction to Ambient - 40

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40N60UFD Rev. C1
 FGH40N60UFD 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
Max Qty
Packaging
Device Marking Device Package Type Qty per Tube per Box
FGH40N60UFD FGH40N60UFDTU TO-247 Tube 30ea -

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
∆BVCES Temperature Coefficient of Breakdown
∆TJ Voltage
VGE = 0V, IC = 250µA - 0.6 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
IC = 40A, VGE = 15V - 1.8 2.4 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40A, VGE = 15V,
- 2.0 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 2110 - pF
Coes Output Capacitance VCE = 30V, VGE = 0V, - 200 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 60 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 24 - ns
tr Rise Time - 44 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 40A, - 112 - ns
tf Fall Time RG = 10Ω, VGE = 15V, - 30 60 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.19 - mJ
Eoff Turn-Off Switching Loss - 0.46 - mJ
Ets Total Switching Loss - 1.65 - mJ
td(on) Turn-On Delay Time - 24 - ns
tr Rise Time - 45 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 40A, - 120 - ns
tf Fall Time RG = 10Ω, VGE = 15V, - 40 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 1.2 - mJ
Eoff Turn-Off Switching Loss - 0.69 - mJ
Ets Total Switching Loss - 1.89 - mJ
Qg Total Gate Charge - 120 - nC
Qge Gate to Emitter Charge VCE = 400V, IC = 40A, - 14 - nC
VGE = 15V
Qgc Gate to Collector Charge - 58 - nC

FGH40N60UFD Rev. C1 2 www.fairchildsemi.com

 FGH40N60UFD 600V, 40A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

TC = 25oC - 1.95 2.6
VFM Diode Forward Voltage IF = 20A V
TC = 125oC - 1.85 -
TC = 25oC - 45 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 140 -
IES =20A, dIES/dt = 200A/µs
TC = 25oC - 75 -
Qrr Diode Reverse Recovery Charge nC
o
TC = 125 C - 375 -

FGH40N60UFD Rev. C1 3 www.fairchildsemi.com

 FGH40N60UFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
o o
TC = 25 C TC = 125 C 15V
15V 12V 20V
20V
100 100 12V

Collector Current, IC [A]

Collector Current, IC [A]

80 80

60 60
10V 10V

40 40

20 20 VGE = 8V
VGE = 8V
0 0
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
120 120
Common Emitter Common Emitter
VGE = 15V VCE = 20V
100 o
100 o
TC = 25 C TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
80 80

60 60

40 40

20 20

0 0
0 1 2 3 4 5 6 7 8 9 10 11 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5 20
Common Emitter Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]

o
Collector-Emitter Voltage, VCE [V]

TC = - 40 C
3.0 16
80A

2.5 12

40A
2.0 8

IC = 20A 80A
1.5 40A
4
IC = 20A

1.0 0
25 50 75 100 125 4 8 12 16 20
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGH40N60UFD Rev. C1 4 www.fairchildsemi.com

 FGH40N60UFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 125 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

80A 40A
40A 80A
4 4
IC = 20A
IC = 20A

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

5000 15
Common Emitter Common Emitter
VGE = 0V, f = 1MHz o
TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
4000 Ciss TC = 25 C 12
200V
Capacitance [pF]

Vcc = 100V 300V

3000 9

Coss
2000 6

1000 3
Crss

0 0
0.1 1 10 30 0 50 100 150
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
400 200

100 10µs
100
Collector Current, Ic [A]

Switching Time [ns]

10 100µs
tr
1ms

10 ms
1 td(on)
DC
Single Nonrepetitive Common Emitter
VCC = 400V, VGE = 15V
Pulse TC = 25oC
0.1 IC = 40A
Curves must be derated
o
linearly with increase TC = 25 C
in temperature o
TC = 125 C
0.01 10
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω]

FGH40N60UFD Rev. C1 5 www.fairchildsemi.com

 FGH40N60UFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500 500
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10Ω
IC = 40A o
TC = 25 C
o o
1000 TC = 25 C TC = 125 C
Switching Time [ns]

Switching Time [ns]

o tr
TC = 125 C td(off)
100

100 td(on)
tf

10 10
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [Ω] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
600 10
Common Emitter Common Emitter
VGE = 15V, RG = 10Ω VCC = 400V, VGE = 15V
o IC = 40A
TC = 25 C
o o
TC = 125 C TC = 25 C
Switching Loss [mJ]
Switching Time [ns]

td(off) o
TC = 125 C
100 Eon
tf
Eoff
1

10 0.3
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [Ω]

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
10 200
Common Emitter
VGE = 15V, RG = 10Ω 100
o Eon
TC = 25 C
Collector Current, IC [A]

o
TC = 125 C
Switching Loss [mJ]

Eoff
1
10

Safe Operating Area

o
VGE = 15V, TC = 125 C
0.1 1
20 40 60 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

FGH40N60UFD Rev. C1 6 www.fairchildsemi.com

 FGH40N60UFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs.
Reverse Voltage
80 200
100
o
TJ = 125 C

Reverse Current , IR [µA]

Forward Current, IF [A]

o 10
TJ = 125 C
10
o
TJ = 25 C o
TJ = 75 C
o 1
TJ = 75 C

o
1 TC = 25 C
0.1
o o
TC = 75 C TJ = 25 C
o
TC = 125 C
0.2 0.01
0 1 2 3 4 50 200 400 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

80 200A/µs

50
di/dt = 100A/µs

60
200A/µs
di/dt = 100A/µs 40
40

20 30
5 10 20 30 40 5 10 20 30 40
Forward Current, IF [A] Forward Current, IF [A]

Figure 23.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01 PDM

single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

FGH40N60UFD Rev. C1 7 www.fairchildsemi.com

 FGH40N60UFD 600V, 40A Field Stop IGBT
Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Dimensions in Millimeters

FGH40N60UFD Rev. C1 8 www.fairchildsemi.com

 TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
® ®
Auto-SPM™ F-PFS™ PowerTrench The Power Franchise
Build it Now™ FRFET® PowerXS™
SM
CorePLUS™ Global Power Resource Programmable Active Droop™
CorePOWER™ Green FPS™ QFET®
TinyBoost™
CROSSVOLT™ Green FPS™ e-Series™ QS™
TinyBuck™
CTL™ Gmax™ Quiet Series™
TinyLogic®
Current Transfer Logic™ GTO™ RapidConfigure™
TINYOPTO™
EcoSPARK® IntelliMAX™ TinyPower™
EfficentMax™ ISOPLANAR™ ™ TinyPWM™
EZSWITCH™* MegaBuck™ Saving our world, 1mW/W/kW at a time™ TinyWire™
™* MICROCOUPLER™ SmartMax™ TriFault Detect™
MicroFET™ SMART START™ TRUECURRENT™*
® MicroPak™ SPM® μSerDes™
MillerDrive™ STEALTH™
Fairchild® MotionMax™ SuperFET™
Fairchild Semiconductor® Motion-SPM™ SuperSOT™-3
FACT Quiet Series™ OPTOLOGIC® UHC®
SuperSOT™-6
FACT® OPTOPLANAR® SuperSOT™-8
Ultra FRFET™
FAST® ®
SupreMOS™
UniFET™
FastvCore™ VCX™
SyncFET™
FETBench™ PDP SPM™ Sync-Lock™ VisualMax™
FlashWriter®* Power-SPM™ ®
* XS™
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change in
Formative / In Design
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
Full Production
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Not In Production
The datasheet is for reference information only.
Rev. I40

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com