PD - 94624B

SMPS IGBT IRGP50B60PD

WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Applications VCE(on) typ. = 2.00V
• Telecom and Server SMPS @ VGE = 15V IC = 33A
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies Equivalent MOSFET
• Consumer Electronics Power Supplies G
Parameters
RCE(on) typ. = 61mΩ
Features E
ID (FET equivalent) = 50A
• NPT Technology, Positive Temperature Coefficient n-channel
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
E
C
Benefits G
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses TO-247AC
• Higher Switching Frequency up to 150kHz

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 75
IC @ TC = 100°C Continuous Collector Current 42
ICM Pulse Collector Current (Ref. Fig. C.T.4) 150
ILM Clamped Inductive Load Current d 150 A
IF @ TC = 25°C Diode Continous Forward Current 50
IF @ TC = 100°C Diode Continous Forward Current 25
IFRM Maximum Repetitive Forward Current e 100
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 370 W
PD @ TC = 100°C Maximum Power Dissipation 150
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.34 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.64
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)

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IRGP50B60PD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.61 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance — 1.2 — Ω 1MHz, Open Collector
— 2.0 2.2 IC = 33A, VGE = 15V 4, 5,6,8,9

VCE(on) Collector-to-Emitter Saturation Voltage — 2.4 2.6 V IC = 50A, VGE = 15V

— 2.6 2.9 IC = 33A, VGE = 15V, TJ = 125°C
— 3.2 3.6 IC = 50A, VGE = 15V, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -7.07 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 42 — S VCE = 50V, IC = 33A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 5.0 500 µA VGE = 0V, VCE = 600V
— 1.0 — mA VGE = 0V, VCE = 600V, TJ = 125°C
— 1.3 1.7 IF = 25A, VGE = 0V
VFM Diode Forward Voltage Drop — 1.5 2.0 V IF = 50A, VGE = 0V 10

— 1.3 1.7 IF = 25A, VGE = 0V, TJ = 125°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) — 240 360 IC = 33A 17

Qgc Gate-to-Collector Charge (turn-on) — 41 82 nC VCC = 400V CT1

Qge Gate-to-Emitter Charge (turn-on) — 84 130 VGE = 15V

Eon Turn-On Switching Loss — 360 590 IC = 33A, VCC = 390V CT3

Eoff Turn-Off Switching Loss — 380 420 µJ VGE = +15V, RG = 3.3Ω, L = 210µH
Etotal Total Switching Loss — 740 960 TJ = 25°C f
td(on) Turn-On delay time — 34 44 IC = 33A, VCC = 390V CT3

tr Rise time — 26 36 ns VGE = +15V, RG = 3.3Ω, L = 210µH

td(off) Turn-Off delay time — 130 140 TJ = 25°C f
tf Fall time — 43 56
Eon Turn-On Switching Loss — 610 880 IC = 33A, VCC = 390V CT3

Eoff Turn-Off Switching Loss — 460 530 µJ VGE = +15V, RG = 3.3Ω, L = 210µH 11,13

Etotal Total Switching Loss — 1070 1410 TJ = 125°C f WF1,WF2

td(on) Turn-On delay time — 33 43 IC = 33A, VCC = 390V CT3

tr Rise time — 26 36 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14

td(off) Turn-Off delay time — 140 160 TJ = 125°C f WF1,WF2

tf Fall time — 50 65
Cies Input Capacitance — 4750 — VGE = 0V 16

Coes Output Capacitance — 390 — VCC = 30V

Cres Reverse Transfer Capacitance — 58 — pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related) g — 280 — VGE = 0V, VCE = 0V to 480V 15

Coes eff. (ER) Effective Output Capacitance (Energy Related) g — 190 —

TJ = 150°C, IC = 150A 3

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 22Ω, VGE = +15V to 0V

trr Diode Reverse Recovery Time — 50 75 ns TJ = 25°C IF = 25A, VR = 200V, 19

— 105 160 TJ = 125°C di/dt = 200A/µs

Qrr Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C IF = 25A, VR = 200V, 21

— 420 4200 TJ = 125°C di/dt = 200A/µs

Irr Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C IF = 25A, VR = 200V, 19,20,21,22

— 8.0 15 TJ = 125°C di/dt = 200A/µs CT5

Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
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 IRGP50B60PD
80 400
Limited by package
70 350

60 300
IC, Collector Current (A)

50 250

Ptot (W)
40 200

30 150

20 100

10 50

0 0
25 50 75 100 125 150 0 20 40 60 80 100 120 140 160
T C, Case Temperature (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 320

280 VGE = 15V

VGE = 12V
240
VGE = 10V
100 VGE = 8.0V
200 VGE = 6.0V
ICE (A)
IC A)

160

120
10
80

40

1 0
10 100 1000 0 2 4 6 8 10

VCE (V) VCE (V)

Fig. 3 - Reverse Bias SOA Fig. 4 - Typ. IGBT Output Characteristics

TJ = 150°C; VGE =15V TJ = -40°C; tp = 80µs
320 320
VGE = 15V
280 VGE = 15V 280
VGE = 12V
VGE = 12V VGE = 10V
240 240
VGE = 10V VGE = 8.0V
VGE = 8.0V VGE = 6.0V
200 VGE = 6.0V 200
ICE (A)

ICE (A)

160 160

120 120

80 80

40 40

0 0
0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs TJ = 125°C; tp = 80µs
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IRGP50B60PD
600 25
T J = 25°C
500 T J = 125°C
20

400
15 ICE = 15A

VCE (V)
ICE (A)

300 ICE = 33A

ICE = 50A
10
200
T J = 125°C
5
100
T J = 25°C

0 0
0 5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 7 - Typ. Transfer Characteristics Fig. 8 - Typical VCE vs. VGE

VCE = 50V; tp = 10µs TJ = 25°C

25 100

Instantaneous Forward Current - IF (A)

20

TJ = 150°C

15 T = 125°C
J
VCE (V)

ICE = 15A T = 25°C

J
ICE = 33A 10

10 ICE = 50A

0 1
A
0.6 1.0 1.4 1.8 2.2 2.6
0 5 10 15 20 Forward Voltage Drop - V FM (V)

VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Maximum. Diode Forward

TJ = 125°C Characteristics tp = 80µs

1800 1000

1600
EON
1400
Swiching Time (ns)

1200
Energy (µJ)

tdOFF
1000 EOFF 100
tF
800

600 tdON

400 tR

200 10
10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
IC (A) IC (A)

Fig. 11 - Typ. Energy Loss vs. IC Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
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 IRGP50B60PD
1800 1000

1600 EOFF

1400 tdOFF

Swiching Time (ns)

1200
Energy (µJ)

1000 100

800 tF
EON
600 tdON
tR
400

200 10
0 10 20 30 40 0 10 20 30 40

RG (Ω) RG (Ω)
Fig. 13 - Typ. Energy Loss vs. RG Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
35 10000

30
Cies

25
1000
Capacitance (pF)

20
Eoes (µJ)

Coes
15

100
10
Cres
5

0 10
0 100 200 300 400 500 600 700 0 100 200 300 400 500

Voltage (V) VCE (V)

Fig. 15- Typ. Output Capacitance Fig. 16- Typ. Capacitance vs. VCE
Stored Energy vs. VCE VGE= 0V; f = 1MHz

16 1.5

14
VGE, Gate-to-Emitter Voltage (V)

VCE = 480V
12 1.3
Normalized VCE(on)

10

8 1.0

4 0.8

0 0.5
0 50 100 150 200 250 300 -60 -40 -20 0 20 40 60 80 100 120 140 160
Q G, Total Gate Charge (nC) T C (°C)

Fig. 17 - Typical Gate Charge vs. VGE Fig. 18 - Normalized Typ. VCE(on)
ICE = 33A vs. Junction Temperature
IC = 33A, VGE= 15V
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IRGP50B60PD
140 30
VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
120 25

I F = 50A
100 20
I F = 25A

Irr- ( A)
trr- (nC)

I F = 10A
I F = 50A
80 15
I F = 25A

IF = 10A
60 10

40 5

A A
20 0
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt

1400 10000
VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
1200

1000
I F = 50A
di (rec) M/dt- (A /µs)

I F = 25A
800
Qrr- (nC)

I F = 10A I F = 50A
1000
I F = 25A
600
I F = 10A

400

200

A A
0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,

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 IRGP50B60PD
1

Thermal Response ( Z thJC ) D = 0.50

0.1
0.20
0.10
0.05 R1 R2
0.01
R1 R2 Ri (°C/W) τi (sec)
0.02 τJ
τJ
τC
0.0789 0.000277
τ
0.01 τ1 τ2
τ1 τ2 0.2614 0.040918
Ci= τi/Ri
Ci i/Ri
0.001 SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

1

D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10
0.05 R1 R2 R3
R1 R2 R3 Ri (°C/W) τi (sec)
0.01 τJ
0.02 τJ
τC
τ 0.0733 0.000420
τ1 τ2
0.01 τ1 τ2
τ3
τ3 0.1301 0.002274
Ci= τi/Ri 0.1358 0.023026
Ci τi/Ri
0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

1000
OPERATION IN THIS AREA
LIMITED BY V CE(on)
ID, Drain-to-Source Current (A)

100
100µsec

1msec
10
10msec

1
100msec

0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1 10 100 1000
VDS, Drain-to-Source Voltage (V)

Fig. 25 - Forward SOA, TC = 25°C; TJ ≤ 150°C

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IRGP50B60PD
L

L
VCC
DUT 80 V DUT
0 480V
1K Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCC
PFC diode L R=
ICM

DUT /
VCC
DRIVER DUT VCC
Rg Rg

Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit

REVERSE RECOVERY CIRCUIT

VR = 200V

0.01 Ω
L = 70µH
D.U.T.

D
dif/dt
ADJUST IRFP250
G

Fig. C.T.5 - Reverse Recovery Parameter

Test Circuit

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 IRGP50B60PD
700 35 700 70
tr
tf
600 30 600 60
Vce Ice
Vce
500 25 500 50
90% Ice
90% Ice
400 20 400 40

Ice (A)

Vce (V)
Vce (V)

Ice (A)
300 15 300 30
Ice
5% Vce 10% Ice
200 10 200 5% Vce 20
5% Ice
100 5 100 10

0 0 0 0
Eon
Eoff Loss Loss
-100 -5 -100 -10
-0.05 0 0.05 0.1 0.15 3.95 4.05 4.15 4.25
Time (uS) Time (uS)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3 @ TJ = 25°C using Fig. CT.3

3
trr
IF
ta tb
0

4
Q rr
2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.75 I RRM

1 di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
through zero crossing and IRRM
trr X IRRM
2. IRRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current

Fig. WF3 - Reverse Recovery Waveform and

Definitions

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IRGP50B60PD
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/07
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