PD 91736A

IRG4RC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT
C
Features
• Short Circuit Rated UltraFast: Optimized for VCES = 600V
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter VCE(on) typ. = 2.39V
G
parameter distribution and higher efficiency than
previous generation @VGE = 15V, IC = 5.0A
• IGBT co-packaged with HEXFREDTM ultrafast, E
ultra-soft-recovery anti-parallel diodes for use in n-ch an nel
bridge configurations
• Industry standard TO-252AA package

Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses D-PAK
• For hints see design tip 97003 TO-252AA
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 9.0
IC @ TC = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector CurrentQ 18 A
ILM Clamped Inductive Load Current R 18
IF @ TC = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 38
W
PD @ TC = 100°C Maximum Power Dissipation 15
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– 3.3
RθJC Junction-to-Case - Diode ––– 7.0 °C/W
RθJA Junction-to-Ambient (PCB mount)* ––– 50
Wt Weight 0.3 (0.01) ––– g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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 IRG4RC10KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.58 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.39 2.62 IC = 5.0A VGE = 15V
— 3.25 — V IC = 9.0A See Fig. 2, 5
— 2.63 — IC = 5.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 1.2 1.8 — S VCE = 50V, IC = 5.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.5 1.8 V IC = 4.0A See Fig. 13
— 1.4 1.7 IC = 4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 19 29 IC = 5.0A
Qge Gate - Emitter Charge (turn-on) — 2.9 4.3 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 9.8 15 VGE = 15V
td(on) Turn-On Delay Time — 49 —
tr Rise Time — 28 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 97 150 IC = 5.0A, VCC = 480V
tf Fall Time — 140 210 VGE = 15V, RG = 100Ω
Eon Turn-On Switching Loss — 0.25 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.14 — mJ and diode reverse recovery
Ets Total Switching Loss — 0.39 0.48 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 100Ω , VCPK < 500V
td(on) Turn-On Delay Time — 46 — TJ = 150°C, See Fig. 10,11,14
tr Rise Time — 32 — IC = 5.0A, VCC = 480V
ns
td(off) Turn-Off Delay Time — 100 — VGE = 15V, RG = 100Ω
tf Fall Time — 310 — Energy losses include "tail"
Ets Total Switching Loss — 0.56 — mJ and diode reverse recovery
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 220 — VGE = 0V
Coes Output Capacitance — 29 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 7.5 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig.
— 38 57 TJ = 125°C 14 IF = 4.0A
Irr Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.
— 70 105 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M /dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.
During tb — 235 — TJ = 125°C 17
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 IRG4RC10KD
1.6

For both:
D uty cy cle: 50%
TJ = 125°C
1.2 T s ink = 55
90°C
LOAD CURRENT (A)

G ate drive as specified

P ow e r Dis sip ation = 1.4 W

S q u a re w a v e :

0.8 6 0% of rate d
volta ge

0.4
Id e a l d io d e s

0.0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)


TJ = 25 °C

10 10

TJ = 150 °C


TJ = 150 °C


TJ = 25 °C

1

V GE = 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1.0 2.0 3.0 4.0 5.0 6.0 7.0 5 10 15 20
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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 IRG4RC10KD


10 5.0
V GE = 15V
80 us PULSE WIDTH 
I C = 10 A

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

8
4.0

3.0

IC = 5 A
4

2.0

I C = 2.5 A
2

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

D = 0.50

1
0.20

0.10


0.05

0.02 P DM
0.1 0.01
 SINGLE PULSE
(THERMAL RESPONSE) t1
t2

0.01

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4RC10KD

 
400 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 5.0A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
300
C, Capacitance (pF)


Cies 12

200

100

Coes 4

C
res
0 0
1 10 100 0 4 8 12 16 20
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
0.40 10
V CC = 480V 50 Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
0.38 I C = 5.0A
Total Switching Losses (mJ)
Total Switching Losses (mJ)


IC = 10 A
0.36

0.34 
IC = 5 A


IC = 2.5 A
0.32

0.30 0.1
0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG , Gate Resistance (Ω) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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 IRG4RC10KD


2.0
Ω

RG = 50
Ohm 100
VGE = 20V
TJ = 150° C T J = 125 o C
VCC = 480V

I C, Collector-to-Emitter Current (A)

VGE = 15V
Total Switching Losses (mJ)

1.5

1.0 10

0.5

SAFE OPERATING AREA

0.0 1
0 2 4 6 8 10 1 10 100 1000
I C , Collector Current (A) VCE, Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100

10 TJ = 150°C

TJ = 125°C

T = 25°C
J

0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0

F orward V oltage D rop - V F M(V )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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 IRG4RC10KD
50 14
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
I F = 8.0A 12
45
I F = 4.0A
I F = 8.0A
10
40 I F = 4.0A
trr- (nC)

Irr- ( A)
8

35

30
4

25
VR = 2 00 V 2
T J = 1 2 5°C
T J = 2 5 °C
20 0
100 1000 100 1000
di f /dt - (A/µ s) di f /dt - (A/µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

200 1000
VR = 2 00 V VR = 20 0V
T J = 1 25°C T J = 1 25 °C
T J = 2 5°C T J = 2 5°C

160

I F = 8.0A I F = 8.0A
di (rec) M/dt- (A /µs)

I F = 4.0A
I F = 4.0A
120
Qrr- (nC)

80

40

A
0 100
100 1000 100 1000
di f /dt - (A/µ s) di f /dt - (A/µ s )
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt,

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 IRG4RC10KD

Same ty pe
device as
D .U.T.

430µF
80% 90%
of Vce D .U .T.
Vge 10%

VC
90%
td(off)

10%
Fig. 18a - Test Circuit for Measurement of IC 5%
tr tf
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs
Eon Eoff
E ts = (Eon +Eoff )

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Ic
Q rr = Ic ddt
id t
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
Vce
ce ieIcd t dt

∫
E on = V t4
t1 E re c = VVd
d idIc
d t dt
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4RC10KD
V g G AT E SIG NA L
DE VIC E U ND E R T E ST

CU R RE NT D .U .T.

VO L TA G E IN D.U .T.

CU R RE NT IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.3 8 (.0 94 )
6.7 3 (.2 65 ) 2.1 9 (.0 86 )
6.3 5 (.2 50 ) 1.1 4 ( .0 45)
0.8 9 ( .0 35)
-A-
5 .46 (.21 5) 1 .2 7 ( .0 50)
0.58 (.02 3)
5 .21 (.20 5) 0 .8 8 ( .0 35)
0.46 (.01 8)

6.45 (.24 5)
5.68 (.22 4)
6.2 2 (.2 45 )
5.9 7 (.2 35 ) 10 .42 (.41 0)
1 .0 2 (.04 0) 9.4 0 (.3 70 ) L E A D A S S IG N M E NT S
1 .6 4 (.02 5) 1 2 3
1 - G A TE
0.51 (.0 2 0) 2 - D R A IN LEAD ASSIGNMENTS
-B - M IN . 3 - SOURCE
1 .5 2 ( .06 0) 4 - D R A IN 1 - GATE
1 .1 5 ( .04 5)
3X
0.89 (.0 35 ) 2 - COLLECTOR
0.64 (.0 25 ) 0 .5 8 (.0 23)
1.1 4 (.0 45) 0 .4 6 (.0 18) 3 - EMITTER
2 X 0.7 6 (.0 30) 0 .2 5 (.0 10 ) M A M B
4 - COLLECTOR
2.28 (.0 90 ) N OT E S:
1 D IM EN SIO N IN G & TO L E R AN C IN G PE R A N SI Y 14 .5 M, 19 82.
4.57 ( .18 0) 2 C O N TR O LL ING D IM E N S IO N : IN C H.
3 C O N FO R M S T O JE D E C O U TL IN E TO - 252 A A.
4 D IM EN SIO N S S H OW N A RE B E F O RE S O LD E R D IP ,
S O L D ER D IP M A X. + 0.16 (.0 06 ).

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 IRG4RC10KD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Tape & Reel Information

TO-252AA
TR TRR TR L

1 6 .3 ( .6 4 1 ) 16 .3 ( .64 1 )
1 5 .7 ( .6 1 9 ) 15 .7 ( .61 9 )

12 .1 ( .4 7 6 ) F E E D D IR E C T IO N 8 .1 ( .3 18 )
FE E D D IR E C T IO N
11 .9 ( .4 6 9 ) 7 .9 ( .3 12 )

NOTES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R .
2 . A L L D IM EN S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

1 3 IN C H

16 m m
NOTES :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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