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PD - 91657B

IRG4PC50W
INSULATED GATE BIPOLAR TRANSISTOR

Features C

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction) VCES = 600V
applications
• Industry-benchmark switching losses improve
G VCE(on) max. = 2.30V
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
E @VGE = 15V, IC = 27A
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers n-channel
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current Q 220
ILM Clamped Inductive Load Current R 220
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy S 170 mJ
PD @ T C = 25°C Maximum Power Dissipation 200
W
PD @ T C = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6 (0.21) ––– g (oz)
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IRG4PC50W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.41 — V/°C VGE = 0V, IC = 5.0mA
— 1.93 2.3 IC = 27A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 2.25 — IC = 55A See Fig.2, 5
V
— 1.71 — IC = 27A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance U 27 41 — S VCE = 100 V, IC = 27A
— — 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current µA
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 5000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 180 270 IC = 27A
Qge Gate - Emitter Charge (turn-on) — 24 36 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 63 95 VGE = 15V
td(on) Turn-On Delay Time — 46 —
tr Rise Time — 33 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 120 180 IC = 27A, VCC = 480V
tf Fall Time — 57 86 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss — 0.08 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.32 — mJ See Fig. 9, 10, 14
Ets Total Switching Loss — 0.40 0.5
td(on) Turn-On Delay Time — 31 — TJ = 150°C,
tr Rise Time — 43 — IC = 27A, VCC = 480V
ns
td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 5.0Ω
tf Fall Time — 62 — Energy losses include "tail"
Ets Total Switching Loss — 1.14 — mJ See Fig. 10,11, 14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 3700 — VGE = 0V
Coes Output Capacitance — 260 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 68 — ƒ = 1.0MHz
Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
(See fig. 13a) U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.

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IRG4PC50W
100
F o r b o th : T ria n g u la r w a v e :
D uty cy cle: 50%
TJ = 125°C
80 T s ink = 90°C
G ate drive as s pecified
P o w e r D is s ip a tio n = 4 0 W C la m p vo lta g e :
Load Current ( A )

8 0 % o f ra te d

60
S q u a re wa ve:
6 0 % o f ra te d
vo l ta g e
40

20
Ide a l d io de s

0 A
0.1 1 10 100 1000

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)

100 100

TJ = 150 °C


TJ = 150 ° C


TJ = 25 °C

TJ = 25 °C
10 10

1

V GE = 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1 10 5 6 7 8 9 10 11
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC50W
60

3.0
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

50

40

I C = 54 A

30 2.0

I C = 27 A

20

I C =13.5 A

10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

0.50
Thermal Response (Z thJC )

0.20
0.1
0.10

0.05


0.02

0.01
0.01
 SINGLE PULSE
(THERMAL RESPONSE)
P DM

t1
t2

0.001

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC50W


8000


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 27A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
6000
C, Capacitance (pF)


Cies 12

4000

C
oes
2000

C
4
res

0 0
1 10 100 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage


10


3.0
V CC = 480V 5.0Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 °C VCC = 480V
I C = 27A
Total Switching Losses (mJ)
Total Switching Losses (mJ)


IC = 54 A

2.0


IC = 27 A
1


IC = 13.5 A
1.0

0.0 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RGRG, ,Gate
GateResistance Ω)
Resistance ((Ohm) TJ , Junction Temperature (° C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PC50W


3.0


1000
RG 5.0Ω
= Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC
VCC = 480V

I C , Collector-to-Emitter Current (A)

VGE = 15V
Total Switching Losses (mJ)

2.0 100

1.0 10

SAFE OPERATING AREA

0.0 1
0 10 20 30 40 50 60 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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IRG4PC50W

L D .U .T.
VC * 480V
RL =
4 X I C@25°C
50V 0 - 480V
1 00 0V 480µF
960V
Q
R

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector

Load Test Circuit Current Test Circuit

IC
L
D river* D .U .T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
* Driver same type
Q as D.U.T., VC = 480V
R S

90 %

S 10 %

VC
90 %
t d (o ff)
Fig. 14b - Switching Loss
Waveforms

1 0%
IC 5%
tr tf
t d (o n ) t=5µ s
Eon E o ff
E ts = (E o n +E o ff )

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IRG4PC50W
Case Outline and Dimensions — TO-247AC

N O TE S :
3 .6 5 (.1 4 3 ) -D-
5 .3 0 ( .2 0 9 ) 1 D IM E N S IO N S & T O L E R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5 M , 1 9 8 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 ( .1 8 5 )
0 .2 5 (.0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2 .5 0 (.0 8 9 )
3 D IM E N S IO N S A R E S H O W N
1 .5 0 (.0 5 9 ) M ILL IM E T E R S (IN C H E S ).
5 .5 0 (.2 1 7) 4 4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5 .5 0 (.2 17 )
2X
4 .5 0 (.1 77 ) LEAD A S S IG N M E N T S
1- GATE
1 2 3 2- COLLE CTO R
3- E M IT T E R
4- COLLE CTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER
2 .4 0 ( .0 9 4 ) 1 .4 0 (.0 5 6 ) 0 .8 0 (.0 3 1 )
2 .0 0 ( .0 7 9 ) 3X 3X
1 .0 0 (.0 3 9 ) 0 .4 0 (.0 1 6 )
2X
0 .2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

D im e n s ion s in M illim e te rs a n d (In c h es )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/