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IRGB30B60KPbF
IRGS30B60KPbF
INSULATED GATE BIPOLAR TRANSISTOR IRGSL30B60KPbF
C VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology
IC = 50A, TC=100°C
• 10µs Short Circuit Capability at TJ=175°C
• Square RBSOA G
tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient
E
• Maximum Junction Temperature rated at 175°C VCE(on) typ. = 1.95V
• Lead-Free n-channel
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
* RθJC (end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
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05/17/05
IRGB/S/SL30B60KPbF
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IRGB/S/SL30B60KPbF
80 400
70 350
60 300
50 250
Ptot (W)
IC (A)
40 200
30 150
20 100
10 50
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
T C (°C) T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000
100
10 µs 100
IC (A)
IC A)
10
100 µs
10
1 1ms
DC
0.1 1
1 10 100 1000 10000 10 100 1000
VCE (V)
VCE (V)
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IRGB/S/SL30B60KPbF
60 60
VGE = 18V VGE = 18V
50 VGE = 15V 50 VGE = 15V
VGE = 12V VGE = 12V
40 VGE = 10V 40 VGE = 10V
VGE = 8.0V VGE = 8.0V
ICE (A)
ICE (A)
30 30
20 20
10 10
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs
60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
ICE (A)
30
20
10
0
0 1 2 3 4 5
VCE (V)
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IRGB/S/SL30B60KPbF
20 20
18 18
16 16
14 14
12 ICE = 15A 12 ICE = 15A
VCE (V)
VCE (V)
10 ICE = 30A 10 ICE = 30A
ICE = 60A ICE = 60A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 8 - Typical VCE vs. VGE Fig. 9 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 250
18 T J = 25°C
16 200 T J = 150°C
14
12 ICE = 15A 150
VCE (V)
ICE (A)
10 ICE = 30A
ICE = 60A
8 100
6
50 T J = 150°C
4
2 T J = 25°C
0 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)
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IRGB/S/SL30B60KPbF
3000 1000
2500
tdOFF
EOFF
1500 100
EON
td ON
1000
tF
500
tR
0
10
0 20 40 60 80
0 20 40 60 80
IC (A)
IC (A)
Fig. 12 - Typ. Energy Loss vs. IC Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V, TJ = 150°C; L=200µH; VCE= 400V
RG= 10Ω; VGE= 15V RG= 10Ω; VGE= 15V
3000 10000
2500
Swiching Time (ns)
2000 1000
EOFF
Energy (µJ)
tdOFF
1500 EON
1000 100
tdON
tF
500
tR
0 10
0 25 50 75 100 125 0 25 50 75 100 125
RG (Ω) RG (Ω)
Fig. 14 - Typ. Energy Loss vs. RG Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 400V
ICE= 30A; VGE= 15V ICE= 30A; VGE= 15V
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IRGB/S/SL30B60KPbF
10000 16
14
Cies 200V
12
400V
1000
Capacitance (pF)
10
VGE (V)
8
Coes 6
100
4
Cres 2
0
10
0 25 50 75 100 125
0 20 40 60 80 100
Q G, Total Gate Charge (nC)
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE Fig. 17 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 30A; L = 600µH
10
1
Thermal Response ( Z thJC )
D = 0.50
0.1 0.20
R1 R2
0.10 R1 R2 Ri (°C/W) τi (sec)
τJ τC
0.05 τJ τ 0.200 0.000428
τ1 τ2
0.01 0.02 τ1 0.209 0.013031
τ2
0.01
Ci= τi/Ri
Ci i/Ri
0.001 Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
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IRGB/S/SL30B60KPbF
L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K
diode clamp /
DUT
Driver L
- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg
VCC
R=
ICM
DUT VCC
Rg
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IRGB/S/SL30B60KPbF
700 35 700 70
600 30 600 60
90% ICE
500 25 500 50
tf
TEST CURRENT
400 20 400 40
VCE (V)
V CE (V)
ICE (A)
ICE (A)
300 15 300 30
5% V CE 90% test current
200 10 200 20
tr 10% test current
5% ICE 5% V CE
100 5 100 10
0 0 0 0
Eon Loss
Eof f Loss
-100 -5 -100 -10
-0.20 0.00 0.20 0.40 0.60 0.80 15.90 16.00 16.10 16.20 16.30
Time(µs) Time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4
600 300
500 250
VCE
VCE (V)
ICE (A)
300 150
200 100
100 50
0 0
-5.00 0.00 5.00 10.00 15.00
time (µS)
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IRGB/S/SL30B60KPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
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IRGB/S/SL30B60KPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
25
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IRGB/S/SL30B60KPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3
Notes:
VCC = 80% (VCES), VGE = 20V, L = 28µH, RG = 22Ω.
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/05
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/