PD -94912

IRG4PC40KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT
Features C
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short VCES = 600V
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter VCE(on) typ. = 2.1V
parameter distribution and higher efficiency than G
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, @VGE = 15V, IC = 25A
E
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations n-channel
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 42
IC @ TC = 100°C Continuous Collector Current 25
ICM Pulsed Collector Current  84 A
ILM Clamped Inductive Load Current ‚ 84
IF @ TC = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 84
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 160
W
PD @ TC = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.77
RθJC Junction-to-Case - Diode ––– ––– 1.7 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
www.irf.com 1
12/29/03
IRG4PC40KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.46 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.10 2.6 IC = 25A VGE = 15V
— 2.70 — V IC = 42A See Fig. 2, 5
— 2.14 — IC = 25A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 7.0 14 — S VCE = 100V, IC = 25A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 3500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.3 1.7 V IC = 15A See Fig. 13
— 1.2 1.6 IC = 15A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 120 180 IC = 25A
Qge Gate - Emitter Charge (turn-on) — 16 24 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 51 77 VGE = 15V
t d(on) Turn-On Delay Time — 53 —
tr Rise Time — 33 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 110 160 IC = 25A, VCC = 480V
tf Fall Time — 100 150 VGE = 15V, RG = 10Ω
Eon Turn-On Switching Loss — 0.95 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.76 — mJ See Fig. 9,10,14
Ets Total Switching Loss — 1.71 2.3
tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
t d(on) Turn-On Delay Time — 52 — TJ = 150°C,
tr Rise Time — 37 — IC = 25A, VCC = 480V
ns
t d(off) Turn-Off Delay Time — 220 — VGE = 15V, RG = 10Ω
tf Fall Time — 140 — Energy losses include "tail"
Ets Total Switching Loss — 2.67 — mJ See Fig. 11,14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 1600 — VGE = 0V
Coes Output Capacitance — 130 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 55 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 74 120 TJ = 125°C 14 IF = 15A
Irr Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C See Fig.
— 6.5 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs TJ = 25°C See Fig.
During tb — 160 — TJ = 125°C 17
2 www.irf.com
 IRG4PC40KDPbF
30

For both:

25 Duty cycle: 50%

TJ = 125°C
Tsink = 90°C
LOAD CURRENT (A)

Gate drive as specified

20 Power Dissipation = 35 W

Square wave:

15 60% of rated
voltage

I
10

Ideal diodes
5

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
IC , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)

TJ = 150°C
TJ = 150 o C
TJ = 25°C
10 10

TJ = 25 oC

V GE = 15V V CC = 50V
20µs PULSE WIDTH 5µs PULSE WIDTH A
1 1
0.1 1 10 5 7 9 11
VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

www.irf.com 3
IRG4PC40KDPbF
50 5.0
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

IC = 50 A
Maximum DC Collector Current(A)

40
4.0

30

3.0

20
IC = 25 A
2.0 IC =12.5 A
10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com
 IRG4PC40KDPbF
3000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 25A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

2500 Coes = Cce + Cgc
16
C, Capacitance (pF)

2000

Cies 12

1500

8
1000

4
500
Coes
Cres
0 0
1 10 100 0 20 40 60 80 100 120 140
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

3.00 100
V CC = 480V RG = 10Ω
Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
I C = 25A
Total Switching Losses (mJ)
Total Switching Losses (mJ)

2.50 10
IC = 50 A

IC = 25 A

IC = 12.5 A
2.00 1

1.50 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG, Gate
RG Resistance ((Ohm)
Gate Resistance Ω) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
www.irf.com 5
IRG4PC40KDPbF
8.0 1000
10Ω
RG = Ohm VGE = 20V
T J = 150 °C T J = 125 oC
125°C

I C , Collector-to-Emitter Current (A)

VCC = 480V
VGE = 15V
Total Switching Losses (mJ)

6.0
100

4.0

10

2.0

SAFE OPERATING AREA

0.0 1
0 10 20 30 40 50 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)

10

TJ = 150°C

TJ = 125°C

TJ = 25°C

1
0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6 www.irf.com
 IRG4PC40KDPbF
100 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

80

I F = 30A

I IRRM - (A)
t rr - (ns)

I F = 30A
IF = 15A
60 10
I F = 15A

I F = 5.0A
40

I F = 5.0A

20 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

800 1000

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

600
di(rec)M/dt - (A/µs)

IF = 30A
Q RR - (nC)

I F = 5.0A
400
I F = 15A I F = 15A

IF = 5.0A I F = 30A

200

0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

www.irf.com 7
IRG4PC40KDPbF

90% Vge
Same type
device as +Vge
D.U.T.

Vce

430µF
80%
of Vce D.U.T. 90% Ic
10% Vce
Ic Ic
5% Ic

td(off) tf

t1+5µS

Fig. 18a - Test Circuit for Measurement of Eoff =

∫t1
Vce
Vce icIcdtdt

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
GATE VOLTAGE D.U.T.
Ic
trr
Qrr =
∫ tx
Ic dtdt
id

10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
Vce
AND CURRENT Vpk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on) tr

∫
t2
VceieIcdtdt
Eon = Vce

∫
t4
t1 Erec = VdVdidIcdt dt
t3
t1 t2 DIODE REVERSE
RECOVERY ENERGY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

8 www.irf.com
 IRG4PC40KDPbF

Vg GATE SIGNAL
DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc* 0 - 480V
50V
6000µF
100V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

www.irf.com 9
IRG4PC40KDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
‚VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)
ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.
„Pulse width 5.0µs, single shot.

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

3.65 (.143) -D-

15.90 (.626) 3.55 (.140) 5.30 (.209)
15.30 (.602) 4.70 (.185)
0.25 (.010) M D B M
-B- -A- 2.50 (.089)
1.50 (.059)
5.50 (.217) 4

20.30 (.800)
19.70 (.775) 5.50 (.217) NOTES:
2X
4.50 (.177) 1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
1 2 3 2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
-C- TO-247-AC.
14.80 (.583)
4.30 (.170)
14.20 (.559) 3.70 (.145)
LEAD ASSIGNMENTS
Hexfet IGBT
2.40 (.094) 1.40 (.056) 0.80 (.031) 1 -LEAD
GateASSIGNMENTS
1 - Gate
2.00 (.079) 3X 1.00 (.039) 3X 0.40 (.016) 2 - Drain
1 - GATE 2 - Collector
2X 2 - DRAIN
0.25 (.010) M C A S 2.60 (.102) 3 - Source 3 - Emitter
3 - SOURCE
5.45 (.215) 2.20 (.087) 4 - Drain
4 - DRAIN4 - Collector
3.40 (.133)
2X 3.00 (.118)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WIT H ASSEMBLY PART NUMBER
LOT CODE 5657 INT ERNATIONAL
ASSEMBLED ON WW 35, 2000 RECT IFIER IRFPE30

IN THE AS SEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
10 www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/