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PD 91601A

IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• Fast: optimized for medium operating VCES = 600V

frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V
G
parameter distribution and higher efficiency than
Generation 3 @VGE = 15V, IC = 9.0A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-cha nn el
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
TO-220AB
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
ICM Pulsed Collector Current Q 64 A
ILM Clamped Inductive Load Current R 64
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 32
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 60
W
PD @ TC = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 2.1
RθJC Junction-to-Case - Diode ––– ––– 3.5 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 80
Wt Weight ––– 2 (0.07) ––– g (oz)
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IRG4BC20FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 1.66 2.0 IC = 9.0A V GE = 15V
— 2.06 — V IC = 16A See Fig. 2, 5
— 1.76 — IC = 9.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 2.9 5.1 — S VCE = 100V, IC = 9.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1700 VGE = 0V, VCE = 600V, TJ = 150°C
V FM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 27 40 IC = 9.0A
Qge Gate - Emitter Charge (turn-on) — 4.2 6.2 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 9.9 15 VGE = 15V
td(on) Turn-On Delay Time — 43 — TJ = 25°C
tr Rise Time — 20 — ns IC = 9.0A, VCC = 480V
td(off) Turn-Off Delay Time — 240 360 VGE = 15V, RG = 50Ω
tf Fall Time — 150 220 Energy losses include "tail" and
Eon Turn-On Switching Loss — 0.25 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 0.64 — mJ See Fig. 9, 10, 18
Ets Total Switching Loss — 0.89 1.3
td(on) Turn-On Delay Time — 41 — TJ = 150°C, See Fig. 11, 18
tr Rise Time — 22 — ns IC = 9.0A, VCC = 480V
td(off) Turn-Off Delay Time — 320 — VGE = 15V, RG = 50Ω
tf Fall Time — 290 — Energy losses include "tail" and
Ets Total Switching Loss — 1.35 — mJ diode reverse recovery.
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 540 — VGE = 0V
Coes Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 7.0 — ƒ = 1.0MHz
t rr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.
— 55 90 TJ = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Q rr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200A/µs
di (rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
During tb — 210 — TJ = 125°C 17
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IRG4BC20FD
14

For both:
12 D uty cy cle: 50%
TJ = 125°C
T s ink = 90°C
LOAD CURRENT (A)

10 G ate drive as specified

P ow e r Dis sip ation = 13 W

8 S q u a re w a v e :
6 0% of rate d
6 volta ge

I
4

2 Id e a l d io d e s

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)


TJ = 25 o C


TJ = 150 o C 
TJ = 150 o C

10 10


TJ = 25 oC

1

V = 15V
GE
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1 10 5 6 7 8 9 10 11 12 13 14
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC20FD
16

3.0
VGE = 15V 
IC = 18 A
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

12

8 2.0 
IC = 9.0
9AA

4 
IC = 4.5 A

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

0.50
1

0.20


0.10

0.05 P DM
0.1
0.02 t1
0.01
 SINGLE PULSE
(THERMAL RESPONSE)
t2

0.01

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC20FD


1000


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 9.0A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

800 Coes = Cce + Cgc 16
C, Capacitance (pF)

600 
Cies 12

400 8

200 
Coes 4

C
res
0 0
1 10 100 0 5 10 15 20 25 30
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
0.90 10
V CC = 480V RG = 50OhmΩ
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
0.88
I C = 9.0A

Total Switching Losses (mJ)
Total Switching Losses (mJ)

IC = 18 A

0.86


IC = 9.09 A
0.84 1


IC = 4.5 A
0.82

0.80

0.78 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
Ω
RG , Gate Resistance (Ohm) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4BC20FD

 
3.0 100
RG Ω
= 50Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC

I C , Collector-to-Emitter Current (A)

VCC = 480V
2.5
VGE = 15V
Total Switching Losses (mJ)

2.0

1.5 10

1.0

0.5

SAFE OPERATING AREA

0.0 1
0 4 8 12 16 20 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )

10

TJ = 1 50 °C

TJ = 1 25 °C

TJ = 25 °C
1

0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4BC20FD
100 100
VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
80

IF = 16 A

I IR R M - (A )
60
t rr - (ns)

I F = 8 .0A
I F = 1 6A
10

IF = 8 .0 A
40

I F = 4.0 A
I F = 4 .0 A
20

0 1
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

500 10000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
400
d i(re c )M /d t - (A /µ s )
Q R R - (n C )

300

I F = 16 A I F = 4.0 A
1000

IF = 8 .0 A
200
I F = 1 6A
I F = 8 .0A

100

IF = 4.0 A

0 100
100 1000 100 1000
di f /dt - (A /µs) d i f /d t - (A /µ s )

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4BC20FD

90% Vge
Same ty pe
device as +Vge
D .U.T.

Vce

430µF
80%
of Vce D .U .T. 9 0 % Ic
10% Vce
Ic Ic
5 % Ic

td (o ff) tf

t1 + 5 µ S

Fig. 18a - Test Circuit for Measurement of Eoff =

∫ Vce
V c e icIcd tdt
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O L T A G E D .U .T .
Ic
trr
Q rr =
∫ tx
Ic ddt
id t

1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
E o n = VVce
ce ieIc
d t dt t4
t1

D IO D E R E V E R S E
E re c =
∫ VVd
t3
d idIc
d t dt

t1 t2
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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IRG4BC20FD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit

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IRG4BC20FD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline — TO-220AB

1 0 .5 4 (.41 5 ) 3.78 (.149) -B - N O TE S :

2 .8 7 (.1 1 3 ) 1 0 .2 9 (.40 5 ) 4.69 (.185) 1 D IM E N S IO N S & T O L E R A N C IN G
3.54 (.139)
2 .6 2 (.1 0 3 ) 4.20 (.165) P E R A N S I Y 14 .5 M , 1 9 8 2 .
-A- 1.32 (.052)
1.22 (.048) 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
6.47 (.255 )
M ILL IM E T E R S (IN C H E S ).
4 6.10 (.240 )
4 C O N F O R M S T O JE D E C O U T L IN E
1 5 .2 4 (.6 0 0 ) T O -2 2 0 A B .
1 4 .8 4 (.5 8 4 )
1.15 (.045)
M IN LEAD A S S IG N M E N T S
1 2 3 1- GA TE
3.96 (.160) 2- C O L LE C T O R
3X 3- E M IT T E R
3.55 (.140)
4- C O L LE C T O R
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 ) 4.06 (.160 )
3.55 (.140 )

0.93 (.037) 0.55 (.022)

3X 3X
1 .4 0 (.0 5 5 ) 0.69 (.027) 0.46 (.018)
3 X 1 .1 5 (.0 4 5 )
0 .3 6 (.01 4 ) M B A M
2.92 (.115)
2 .5 4 (.1 0 0) 2.64 (.104)
2X

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e ns io ns in M illim e ters a nd (In c he s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
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