PD - 95330A

SMPS IGBT
IRGP50B60PD1PbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Applications VCE(on) typ. = 2.00V
• Telecom and Server SMPS @ VGE = 15V IC = 33A
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies Equivalent MOSFET
• Consumer Electronics Power Supplies G
Parameters
• Lead-Free
RCE(on) typ. = 61mΩ
Features E
ID (FET equivalent) = 50A
• NPT Technology, Positive Temperature Coefficient n-channel
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
E
C
Benefits G
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses TO-247AC
• Higher Switching Frequency up to 150kHz

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 75
IC @ TC = 100°C Continuous Collector Current 45
ICM Pulse Collector Current (Ref. Fig. C.T.4) 150
ILM Clamped Inductive Load Current d 150 A
IF @ TC = 25°C Diode Continous Forward Current 40
IF @ TC = 100°C Diode Continous Forward Current 15
IFRM Maximum Repetitive Forward Current e 60
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 390 W
PD @ TC = 100°C Maximum Power Dissipation 156
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.32 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)

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IRGP50B60PD1PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.31 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance — 1.7 — Ω 1MHz, Open Collector
— 2.00 2.35 IC = 33A, VGE = 15V 4, 5,6,8,9

VCE(on) Collector-to-Emitter Saturation Voltage — 2.45 2.85 V IC = 50A, VGE = 15V

— 2.60 2.95 IC = 33A, VGE = 15V, TJ = 125°C
— 3.20 3.60 IC = 50A, VGE = 15V, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 41 — S VCE = 50V, IC = 33A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 5.0 500 µA VGE = 0V, VCE = 600V
— 1.0 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop — 1.30 1.70 V IF = 15A, VGE = 0V 10

— 1.20 1.60 IF = 15A, VGE = 0V, TJ = 125°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig

Qg Total Gate Charge (turn-on) — 205 308 IC = 33A 17

Qgc Gate-to-Collector Charge (turn-on) — 70 105 nC VCC = 400V CT1

Qge Gate-to-Emitter Charge (turn-on) — 30 45 VGE = 15V

Eon Turn-On Switching Loss — 255 305 IC = 33A, VCC = 390V CT3

Eoff Turn-Off Switching Loss — 375 445 µJ VGE = +15V, RG = 3.3Ω, L = 200µH
Etotal Total Switching Loss — 630 750 TJ = 25°C f
td(on) Turn-On delay time — 30 40 IC = 33A, VCC = 390V CT3

tr Rise time — 10 15 ns VGE = +15V, RG = 3.3Ω, L = 200µH

td(off) Turn-Off delay time — 130 150 TJ = 25°C f
tf Fall time — 11 15
Eon Turn-On Switching Loss — 580 700 IC = 33A, VCC = 390V CT3

Eoff Turn-Off Switching Loss — 480 550 µJ VGE = +15V, RG = 3.3Ω, L = 200µH 11,13

Etotal Total Switching Loss — 1060 1250 TJ = 125°C f WF1,WF2

td(on) Turn-On delay time — 26 35 IC = 33A, VCC = 390V CT3

tr Rise time — 13 20 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14

td(off) Turn-Off delay time — 146 165 TJ = 125°C f WF1,WF2

tf Fall time — 15 20
Cies Input Capacitance — 3648 — VGE = 0V 16

Coes Output Capacitance — 322 — VCC = 30V

Cres Reverse Transfer Capacitance — 56 — pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related) g — 215 — VGE = 0V, VCE = 0V to 480V 15

Coes eff. (ER) Effective Output Capacitance (Energy Related) g — 163 —

TJ = 150°C, IC = 150A 3

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 22Ω, VGE = +15V to 0V

trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C IF = 15A, VR = 200V, 19

— 74 120 TJ = 125°C di/dt = 200A/µs

Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C IF = 15A, VR = 200V, 21

— 220 600 TJ = 125°C di/dt = 200A/µs

Irr Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V, 19,20,21,22

— 6.5 10 TJ = 125°C di/dt = 200A/µs CT5

Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as C oes while VCE is rising from 0 to 80% VCES.
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 IRGP50B60PD1PbF
90 450

80 400

70 350

60 300

Ptot (W)
50 250
IC (A)

40 200

30 150

20 100

10 50

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

1000 200
VGE = 15V
180
VGE = 12V
160 VGE = 10V
VGE = 8.0V
140
100 VGE = 6.0V
120
ICE (A)
IC A)

100
80
10
60
40
20

1 0
10 100 1000 0 1 2 3 4 5 6 7 8 9 10
VCE (V) VCE (V)

Fig. 3 - Reverse Bias SOA Fig. 4 - Typ. IGBT Output Characteristics

TJ = 150°C; VGE =15V TJ = -40°C; tp = 80µs
200 200

180 VGE = 15V 180 VGE = 15V

VGE = 12V 160 VGE = 12V
160
VGE = 10V VGE = 10V
140 VGE = 8.0V 140 VGE = 8.0V
VGE = 6.0V VGE = 6.0V
120 120
ICE (A)
ICE (A)

100 100

80 80

60 60

40 40

20 20

0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs TJ = 125°C; tp = 80µs
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IRGP50B60PD1PbF
900 10

800 T J = 25°C 9
T J = 125°C
700 8

600 7
ICE = 15A

VCE (V)
500 6
ICE (A)

ICE = 33A
400 5 ICE = 50A
300 4

200 TJ = 125°C 3

100 T J = 25°C 2

0 1
0 5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 7 - Typ. Transfer Characteristics Fig. 8 - Typical VCE vs. VGE

VCE = 50V; tp = 10µs TJ = 25°C

10 100

8 urrent -I (A)
F

7
ICE = 15A
ardC
VCE (V)

6
ICE = 33A 10
orw

5 ICE = 50A
InstantaneousF

TJ = 150°C
4 TJ = 125°C

TJ = 25°C
3

1 1
0.8 1.2 1.6 2.0 2.4
0 5 10 15 20 Forward Voltage Drop - V FM (V)

VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typ. Diode Forward Characteristics
TJ = 125°C tp = 80µs

1200 1000

1000
Swiching Time (ns)

800
td OFF
Energy (µJ)

EON
600 100
EOFF
400
tF
tdON
200
tR
0 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
IC (A) IC (A)

Fig. 11 - Typ. Energy Loss vs. IC Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
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 IRGP50B60PD1PbF
1000 1000

900

800
tdOFF

Swiching Time (ns)

EON
Energy (µJ)

700
100
600 EOFF

500 td ON

400 tF
tR
300 10
0 5 10 15 20 25 0 5 10 15 20 25

RG ( Ω) RG ( Ω)

Fig. 13 - Typ. Energy Loss vs. RG Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
40 10000

Cies

30 Capacitance (pF)

1000
Eoes (µJ)

Coes
20

100
10 Cres

0 10
0 100 200 300 400 500 600 700 0 20 40 60 80 100
VCE (V) VCE (V)

Fig. 15- Typ. Output Capacitance Fig. 16- Typ. Capacitance vs. VCE
Stored Energy vs. VCE VGE= 0V; f = 1MHz

16 1.4

14

12 400V
Normalized V CE(on) (V)

1.2
10
VGE (V)

6
1.0
4

0 0.8
0 50 100 150 200 250 -50 0 50 100 150 200
Q G , Total Gate Charge (nC) T J (°C)

Fig. 17 - Typical Gate Charge vs. VGE Fig. 18 - Normalized Typ. VCE(on)
ICE = 33A vs. Junction Temperature
IC = 33A, VGE= 15V
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IRGP50B60PD1PbF
100 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

80

I F = 30A

I IRRM - (A)
t rr - (ns)

I F = 30A
IF = 15A
60 10
I F = 15A

I F = 5.0A
40

I F = 5.0A

20 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt

800 1000

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

600
di(rec)M/dt - (A/µs)

IF = 30A
Q RR - (nC)

I F = 5.0A
400
I F = 15A I F = 15A

IF = 5.0A I F = 30A

200

0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,

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 IRGP50B60PD1PbF
1

D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10
R1 R2
0.05 R1 R2 Ri (°C/W) τi (sec)
0.01 τJ τC
0.01 τJ τ 0.157 0.000346
τ1 τ2
0.02 τ1 τ2 0.163 4.28
Ci= τi/Ri
SINGLE PULSE Ci i/Ri
0.001
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10
Thermal Response ( Z thJC )

1 D = 0.50
0.20
0.10
R1 R2 R3
0.05 R1 R2 R3 Ri (°C/W) τi (sec)
0.1 τJ
τJ
τC
τ
0.363 0.000112
0.01 τ1 τ2 τ3
0.02
τ1 τ2 τ3 0.864 0.001184
Ci= τi/Ri 0.473 0.032264
0.01 Ci i/Ri
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP50B60PD1PbF
L

L
VCC
DUT 80 V DUT
0 480V
1K Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCC
PFC diode L R=
ICM

DUT /
VCC
DRIVER DUT VCC
Rg Rg

Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit

REVERSE RECOVERY CIRCUIT

VR = 200V

0.01 Ω
L = 70µH
D.U.T.

D
dif/dt
ADJUST IRFP250
G

Fig. C.T.5 - Reverse Recovery Parameter

Test Circuit

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 IRGP50B60PD1PbF
600 60 450 90
550
400 80
500 50
90% ICE
450 350 70
400 tf 40 300 60
tr
350 TEST CURRENT
90% ICE 250 50
300 30
VCE (V)

V CE (V)
ICE (A)

ICE (A)
250 200 40
200 20
5% V CE 150 30
150 5% V CE
100 10 100 20
5% ICE 10% ICE
50 50 10
0 0
-50 0 0
Eof f Eon Loss
-100 -10 -50 -10
-0.20 0.00 0.20 0.40 -0.10 0.00 0.10 0.20
Time (µs) Time(µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3 @ TJ = 25°C using Fig. CT.3

3
trr
IF
ta tb
0

4
Q rr
2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.75 I RRM

1 di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
through zero crossing and IRRM
trr X IRRM
2. I RRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M /dt - Peak rate of change of
going I F to point where a line passing current during tb portion of trr
through 0.75 I RRM and 0.50 IRRM
extrapolated to zero current

Fig. WF3 - Reverse Recovery Waveform and

Definitions

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IRGP50B60PD1PbF
TO-247AC Package Outline
Dimensions are shown in milimeters (inches)

TO-247AC Part Marking Information

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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2008
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