APT30GP60B

600V
®
POWER MOS 7 IGBT
A new generation of high voltage power IGBTs. Using punch-through TO-247
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7® IGBT provides a lower cost alternative to a Power C
G
MOSFET. C
E
G
• Low Conduction Loss • 100 kHz operation @ 400V, 37A
• Low Gate Charge • 200 kHz operation @ 400V, 24A E

• Ultrafast Tail Current shutoff • SSOA rated

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT30GP60B UNIT

VCES Collector-Emitter Voltage 600

VGE Gate-Emitter Voltage ±20 Volts
VGEM Gate-Emitter Voltage Transient ±30
I C1 Continuous Collector Current @ TC = 25°C 100
I C2 Continuous Collector Current @ TC = 110°C 49 Amps
I CM Pulsed Collector Current 1 @ TC = 25°C 120
SSOA Switching Safe Operating Area @ TJ = 150°C 120A @ 600V
PD Total Power Dissipation 463 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 600

VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) 3 4.5 6
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) 2.2 2.7
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) 2.1
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
250
I CES µA
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
2500
I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA
6-2003

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Rev D

APT Website - http://www.advancedpower.com

050-7400
 DYNAMIC CHARACTERISTICS APT30GP60B
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Cies Input Capacitance Capacitance 3200
Coes Output Capacitance VGE = 0V, VCE = 25V 295 pF
Cres Reverse Transfer Capacitance f = 1 MHz 20
VGEP Gate-to-Emitter Plateau Voltage Gate Charge 7.5 V
Qg Total Gate Charge 3 VGE = 15V 90
Qge Gate-Emitter Charge VCE = 300V 20 nC
Qgc Gate-Collector ("Miller ") Charge I C = 30A
30
SSOA Switching SOA TJ = 150°C, R G = 5Ω, VGE = 120 A
15V, L = 100µH,VCE = 600V
td(on) Turn-on Delay Time Inductive Switching (25°C) 13
tr Current Rise Time VCC(Peak) = 400V 18
VGE = 15V ns
td(off) Turn-off Delay Time 55
I C = 30A
tf Current Fall Time 46
4
R G = 5Ω
Eon1 Turn-on Switching Energy 260
TJ = +25°C
Eon2 Turn-on Switching Energy (Diode) 5 335 µJ
Eoff Turn-off Switching Energy 6
250 330
td(on) Turn-on Delay Time Inductive Switching (125°C) 13
tr Current Rise Time VCC(Peak) = 400V 18
VGE = 15V ns
td(off) Turn-off Delay Time 84
I C = 30A
tf Current Fall Time 80
4
R G = 5Ω
Eon1 Turn-on Switching Energy 260
TJ = +125°C
Turn-on Switching Energy (Diode) 5
Eon2 508 µJ
Eoff Turn-off Switching Energy 6 518 750

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT
RΘJC Junction to Case (IGBT) .27
°C/W
RΘJC Junction to Case (DIODE) N/A
WT Package Weight 5.90 gm

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.
6-2003
Rev D
050-7400
TYPICAL PREFORMANCE CURVES APT30GP60B
60 60
VGE = 15V. VGE = 10V.
250µs PULSE TEST 250µs PULSE TEST
<0.5 % DUTY CYCLE <0.5 % DUTY CYCLE
50 50
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

TC=-55°C
TC=-55°C
40 40

30 30

20 20 TC=25°C
TC=25°C

10 10 TC=125°C
TC=125°C

0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) FIGURE 2, Output Characteristics (VGE = 10V)
200 16
250µs PULSE TEST IC = 30A

VGE, GATE-TO-EMITTER VOLTAGE (V)

<0.5 % DUTY CYCLE TJ = 25°C
180
14
TJ = -55°C
IC, COLLECTOR CURRENT (A)

160
12 VCE=120V
140
10 VCE=300V
120

100 8
VCE=480V
80
6
TJ = 25°C
60
4
40 TJ = 125°C
2
20
0 0
0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 80 90 100
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
4 3.5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

TJ = 25°C. VGE = 15V.

250µs PULSE TEST 250µs PULSE TEST
3.5 <0.5 % DUTY CYCLE
3 <0.5 % DUTY CYCLE
IC= 60A
3
IC= 60A 2.5
2.5 IC= 30A
IC= 30A 2 IC=15A
2 IC= 15A
1.5
1.5
1
1

0.5 0.5

0 0
6 8 10 12 14 16 -50 -25 0 25 50 75 100 125
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, JUNCTION TRMPERATURE (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN

1.2 140

1.15
IC, DC COLLECTOR CURRENT(A)

120
VOLTAGE (NORMALIZED)

1.10
100
1.05
80
1.0
60
0.95
6-2003

40
0.90

0.85 20
Rev D

0.8 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
050-7400

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 APT30GP60B
25 100
VGE =15V,TJ=125°C VCE = 400V
90 RG = 5Ω

td (OFF), TURN-OFF DELAY TIME (ns)

td(ON), TURN-ON DELAY TIME (ns)
VGE= 10V L = 100 µH
20 80

70 VGE =10V,TJ=125°C
VGE =15V,TJ=25°C
15 60
VGE= 15V 50

10 40
VGE =10V,TJ=25°C
30
5 VCE = 400V 20
TJ = 25°C, TJ =125°C
RG = 5Ω 10
L = 100 µH
0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
50 100
TJ = 25 or 125°C,VGE = 10V RG = 5Ω, L = 100µH, VCE = 400V

40 80

TJ = 125°C, VGE = 10V or 15V

tr, RISE TIME (ns)

tf, FALL TIME (ns)

30 60

20 40
TJ = 25°C, VGE = 10V or 15V

10 20
TJ = 25 or 125°C,VGE = 15V

R = 5Ω, L = 100µH, VCE = 400V

G
0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
1400 1400
VCE = 400V T = 125°C,VGE =15V VCE = 400V
EOFF, TURN OFF ENERGY LOSS (µJ)

VGE = +15V J VGE = +15V

EON2, TURN ON ENERGY LOSS (µJ)

1200 RG = 5 Ω 1200 RG = 5 Ω

TJ = 125°C, VGE = 10V or 15V

1000 1000
TJ = 125°C,VGE =10V

800 800 TJ = 25°C, VGE = 10V or 15V

600 600
TJ = 25°C,VGE =15V
400 400
TJ = 25°C,VGE =10V
200 200

0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
2500 1600 VCE = 400V
VCE = 400V
VGE = +15V VGE = +15V
SWITCHING ENERGY LOSSES (µJ)

SWITCHING ENERGY LOSSES (µJ)

RG = 5 Ω
TJ = 125°C
2000
1200 Eon2,60A
Eon2, 60A
1500
Eoff, 60A 800 Eoff,60A

1000
6-2003

Eon2, 30A Eon2,30A

400
500 Eon2, 15A Eoff, 30A
Eoff, 30A
Rev D

Eon2,15A
Eoff, 15A Eoff, 15A
0 0
0 10 20 30 40 50 60 25 50 0
75 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
050-7400

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PREFORMANCE CURVES APT30GP60B
10,000 140
5,000 Cies
120

1,000
C, CAPACITANCE ( F)

100
P

IC, COLLECTOR CURRENT (A)

500
Coes
80
100
50 60

Cres 40
10
5
20

0 0
0 10 20 30 40 50 0 100 200 300 400 500 600 700
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18, Minimim Switching Safe Operating Area

0.30

0.25 0.9
ZθJC, THERMAL IMPEDANCE (°C/W)

0.20 0.7

0.15 0.5
Note:
0.10

PDM
0.3 t1

t2
0.05
0.1 Duty Factor D = t1/t2
0.05 Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

RC MODEL 300
Junction
temp. ( ”C)
FMAX, OPERATING FREQUENCY (kHz)

0.0196 0.00500F

100

Power
(Watts)
0.107 0.0132F Fmax = min(f max1 ,f max 2 )
50
0.05
f max1 =
t d(on ) + t r + t d(off ) + t f
0.144 0.135F Pdiss − Pcond
TJ = 125°C f max 2 =
Case temperature TC = 75°C E on 2 + E off
D = 50 %
VCE = 400V TJ − TC
RG = 5 Ω Pdiss =
10 R θJC
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
6-2003
Rev D
050-7400
 APT30GP60B

APT15DF60 Gate Voltage

10 %
TJ = 125 C
td(on)
tr
V CC IC V CE

Collector Current
90%

D.U.T. 5% 10% 5%

Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit

Figure 22, Turn-on Switching Waveforms and Definitions

90%
VTEST
td(off)
Gate Voltage *DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
Collector Voltage

A
tf
V CE

90% IC
100uH
V CLAMP B
10% 0
A
Switching Energy Collector Current
DRIVER* D.U.T.

Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit

T0-247 Package Outline

4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC 6.20 (.244)
Collector

20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800)
1.01 (.040) Gate
1.40 (.055)
Collector
6-2003

Emitter

2.21 (.087)
Rev D

2.59 (.102) 5.45 (.215) BSC

2-Plcs.
Dimensions in Millimeters and (Inches)
050-7400

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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