SKW30N60HS

High Speed IGBT in NPT-technology

C
• 30% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs G

E

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:

- parallel switching capability PG-TO-247-3

- moderate Eoff increase with temperature

- very tight parameter distribution

• High ruggedness, temperature stable behaviour

• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC Eoff Tj Marking Package

SKW30N60HS 600V 30 480µJ 150°C K30N60HS PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current IC A
TC = 25°C 41
TC = 100°C 30
Pulsed collector current, tp limited by Tjmax ICpuls 112
Turn off safe operating area - 112
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current IF
TC = 25°C 41
TC = 100°C 28
Diode pulsed current, tp limited by Tjmax IFpuls 112
Gate-emitter voltage static VGE ±20 V
transient (tp<1µs, D<0.05) ±30
Short circuit withstand time2) tSC 10 µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation Ptot 250 W
TC = 25°C
Operating junction and storage temperature Tj , -55...+150 °C
Tstg
Time limited operating junction temperature for t < 150h Tj(tl) 175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.2 Sep 08

 SKW30N60HS

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.5 K/W
junction – case
Diode thermal resistance, RthJCD 1.29
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =500 µA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V, I C =30A
T j = 25°C 2.8 3.15
T j = 150 °C 3.5 4.00
Diode forward voltage VF VGE=0V, IF=30A
T j = 25°C 1.55 2.05
T j = 150 °C - 1.55 2.05
Gate-emitter threshold voltage VGE(th) I C =700 µA,V C E =V G E 3 4 5
Zero gate voltage collector current ICES V C E = 60 0 V,V G E = 0 V µA
T j = 25°C - - 40
T j = 150 °C - - 3000
Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA
Transconductance gfs V C E =20V, I C =30A - 20 S

Dynamic Characteristic
Input capacitance Ciss V C E =25V, - 1500 pF
Output capacitance Coss VGE=0V, - 203
Reverse transfer capacitance Crss f=1MHz - 92
Gate charge QGate V C C = 48 0 V, I C =30A - 141 nC
V G E =15V
Internal emitter inductance LE - 13 nH
measured 5mm (0.197 in.) from case
Short circuit collector current1) IC(SC) V G E =15V,t S C ≤1 0 µs - 220 A
V C C ≤ 60 0V,
T j ≤ 150 °C

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 2 Rev. 2.2 Sep 08

 SKW30N60HS

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25°C , - 20 ns
Rise time tr V C C = 40 0 V, I C =30A, - 21
V G E = 0 /1 5 V,
Turn-off delay time td(off) R G = 1 1Ω - 250
Fall time tf L σ 2 ) =6 0nH , - 25
Turn-on energy Eon C σ 2 ) =40pF - 0.60 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.55
Total switching energy Ets reverse recovery. - 1.15

Anti-Parallel Diode Characteristic

Diode reverse recovery time trr T j = 25°C , - 125 ns
tS V R = 40 0 V , I F =30A, - 20
tF d i F /d t= 1100 A/µs - 105
Diode reverse recovery charge Qrr - 0.82 µC
Diode peak reverse recovery current Irrm - 17 A
Diode peak rate of fall of reverse dirr/dt - 580 A/µs
recovery current during t b

2)
Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.

Power Semiconductors 3 Rev. 2.2 Sep 08

 SKW30N60HS

Switching Characteristic, Inductive Load, at Tj=150 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 150 °C - 16 ns
Rise time tr V C C = 40 0 V, I C =30A, - 13
V G E = 0 /1 5 V,
Turn-off delay time td(off) R G = 1 .8Ω - 122
Fall time tf L σ 1 ) =6 0nH , - 29
Turn-on energy Eon Cσ1) =40pF - 0.78 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.48
Total switching energy Ets reverse recovery. - 1.26
Turn-on delay time td(on) T j = 150 °C - 20 ns
Rise time tr V C C = 40 0 V, I C =30A, - 19
V G E = 0 /1 5 V,
Turn-off delay time td(off) R G = 1 1Ω - 274
Fall time tf L σ 1 ) =6 0nH , - 27
Turn-on energy Eon Cσ1) =40pF - 0.91 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.70
Total switching energy Ets reverse recovery. - 1.61

Anti-Parallel Diode Characteristic

Diode reverse recovery time trr T j = 150 °C - 190 ns
tS V R = 40 0 V , I F =30A, - 30
tF d i F /d t= 1250 A/µs - 160
Diode reverse recovery charge Qrr - 2.0 µC
Diode peak reverse recovery current Irrm - 24 A
Diode peak rate of fall of reverse dirr/dt - 480 A/µs
recovery current during t b

1)
Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.

Power Semiconductors 4 Rev. 2.2 Sep 08

 SKW30N60HS

100A tP=4µs
100A
15µs
T C=80°C
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

80A
50µs
10A

60A T C=110°C
200µs

1ms
40A
Ic 1A

20A
Ic
DC

0A 0.1A
10Hz 100Hz 1kHz 10kHz 100kHz
1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤ 150°C;
(Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE=15V)
VGE = 0/+15V, RG = 11Ω)

Limited by Bond wire

40A
200W
IC, COLLECTOR CURRENT
POWER DISSIPATION

30A
150W

20A
100W
Ptot,

50W 10A

0W
2 5 °C 5 0 °C 7 5 °C 1 0 0 °C 1 2 5 °C 0A
25°C 75°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors 5 Rev. 2.2 Sep 08

 SKW30N60HS

V GE=20V VGE=20V
80A 80A 15V
15V
13V 13V
70A 70A
11V 11V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

9V 9V
60A 60A 7V
7V
5V 5V
50A 50A

40A 40A

30A 30A

20A 20A

10A 10A

0A 0V 0A
2V 4V 6V 0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 150°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

5,5V
T J = -5 5 °C
80A 5,0V
2 5 °C I C =60A
IC, COLLECTOR CURRENT

1 5 0 °C 4,5V

60A 4,0V

3,5V
I C =30A
40A 3,0V

2,5V
I C =15A
20A 2,0V

1,5V

0A 1,0V
0V 2V 4V 6V 8V -50°C 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=10V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 6 Rev. 2.2 Sep 08

 SKW30N60HS

td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns
td(off)
100 ns

tf

tf

td(on)
td(on)
tr
tr
10ns 10 ns
0A 10A 20A 30A 40A 50A 0Ω 5Ω 10Ω 15Ω 20Ω 25Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=150°C, (inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω, VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

5,5V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

td(off) 5,0V

4,5V
t, SWITCHING TIMES

100ns 4,0V

3,5V max.
3,0V

2,5V typ.
tf
tr 2,0V
td(on)
1,5V min.

10ns 1,0V
0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE=400V, (IC = 0.7mA)
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.2 Sep 08

 SKW30N60HS

5,0mJ *) Eon and Ets include losses

*) Eon and Ets include losses
due to diode recovery
due to diode recovery 3,0 mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

4,0mJ
2,5 mJ

3,0mJ 2,0 mJ

Eon*
1,5 mJ Ets*
2,0mJ

1,0 mJ Eon*
Eoff
1,0mJ
0,5 mJ
Eoff

0,0mJ 0,0 mJ
0A 10A 20A 30A 40A 50A 60A 0Ω 5Ω 10Ω 15Ω 20Ω 25Ω 30Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ=150°C, (inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω, VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

Ets* 0.2
E, SWITCHING ENERGY LOSSES

1,5mJ -1
10 K/W
0.1
0.05

Eon* 0.02
1,0mJ -2
10 K/W R,(K/W) τ, (s)
0.3681 0.0555
0.01 0.0938 1.26E-03
0.038 1.49E-04
Eoff
0,5mJ -3
10 K/W
R1 R2

single pulse
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
0,0mJ -4
10 K/W
0°C 50°C 100°C 150°C 1µs 10µs 100µs 1ms 10m s 100ms

TJ, JUNCTION TEMPERATURE tP, PULSE WIDTH

Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal resistance
as a function of junction (D = tp / T)
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 8 Rev. 2.2 Sep 08

 SKW30N60HS

Ciss
1nF
VGE, GATE-EMITTER VOLTAGE

15V

c, CAPACITANCE
120V 480V Coss
10V
Crss
100pF

5V

0V 10pF
0nC 50nC 100nC 150nC 0V 10V 20V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=30 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT

300A
SHORT CIRCUIT WITHSTAND TIME

15µs
250A

200A
10µs
150A

100A
5µs
tSC,

50A

0µs 0A
10V 11V 12V 13V 14V 10V 12V 14V 16V 18V

VGE, GATE-EMITETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-
(VCE=600V, start at TJ=25°C) emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)

Power Semiconductors 9 Rev. 2.2 Sep 08

 SKW30N60HS

500ns 2,8µC
IF=60A
2,6µC
450ns

Qrr, REVERSE RECOVERY CHARGE

trr, REVERSE RECOVERY TIME

IF=30A 2,4µC
400ns
2,2µC
350ns IF=60A
2,0µC
300ns IF=15A
1,8µC
250ns IF=30A
1,6µC
200ns
1,4µC
150ns IF=15A
1,2µC
100ns
1,0µC
0A/µs 250A/µs 500A/µs 750A/µs 0A/µs 250A/µs 500A/µs 750A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as Figure 22. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, TJ=150°C, slope
Dynamic test circuit in Figure E) (VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)

IF=30A IF=60A
24A
OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

-400A/µs

20A

-300A/µs
16A
IF=15A

12A
-200A/µs

8A
-100A/µs
Irr,

4A

0A -0A/µs
200A/µs 400A/µs 600A/µs 800A/µs 200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current Figure 24. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR=400V, TJ=150°C, (VR=400V, TJ=150°C,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 10 Rev. 2.2 Sep 08

 SKW30N60HS

TJ=-55°C
IF=60A
25°C
50A 150°C 2,0

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

40A IF=30A
1,5
IF=15A
30A

1,0
20A

0,5
10A

0A 0,0
0,0V 0,5V 1,0V 1,5V 2,0V -50 0 50 100 150
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as Figure 26. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

0
10 K/W D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

0.2

0.1
-1
10 K/W 0.05 R,(K/W) τ, (s)
-2
0.358 9.02*10
-3
0.367 9.42*10
0.02 -4
0.329 9.93*10
-4
0.01 0.216 1.19*10
-5
0.024 1.92*10
-2
10 K/W
R1 R2

single pulse C1=τ1/R1 C2=τ2/R2

-3
10 K/W
1µs 10µs 100µs 1m s 10m s 100m s

tP, PULSE WIDTH

Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)

Power Semiconductors 11 Rev. 2.2 Sep 08

 SKW30N60HS

PG-TO247-3

MIN MAX MIN MAX

4.90 5.16 0.193 0.203
2.27 2.53 0.089 0.099
1.85 2.11 0.073 0.083 Z8B00003327
1.07 1.33 0.042 0.052
0
1.90 2.41 0.075 0.095
1.90 2.16 0.075 0.085
2.87 3.38 0.113 0.133
2.87 3.13 0.113 0.123
0 5 5
0.55 0.68 0.022 0.027
20.82 21.10 0.820 0.831 7.5mm
16.25 17.65 0.640 0.695
1.05 1.35 0.041 0.053
15.70 16.03 0.618 0.631
13.10 14.15 0.516 0.557
3.68 5.10 0.145 0.201
1.68 2.60 0.066 0.102
5.44 0.214
3 3
19.80 20.31 0.780 0.799 17-12-2007
4.17 4.47 0.164 0.176
3.50 3.70 0.138 0.146
5.49 6.00 0.216 0.236 03
6.04 6.30 0.238 0.248

Power Semiconductors 12 Rev. 2.2 Sep 08

 SKW30N60HS

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH
a nd Stray capacity C σ =40pF.

Power Semiconductors 13 Rev. 2.2 Sep 08

 SKW30N60HS

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81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
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Power Semiconductors 14 Rev. 2.2 Sep 08